Two-carrier transport in SrMnBi 2 thin films
Xiao Yan,Cheng Zhang,Shan-Shan Liu,Yan-Wen Liu,David Wei Zhang,Fa-Xian Xiu,Peng Zhou
DOI: https://doi.org/10.1007/s11467-017-0663-0
2017-01-01
Frontiers of Physics in China
Abstract:Monocrystalline SrMnBi 2 thin films were grown by molecular beam epitaxy (MBE), and their transport properties were investigated. A high and unsaturated linear magnetoresistance (MR) was observed, which exhibited a transition from a semi-classical weak-field B 2 dependence to a high-field linear dependence. An unusual nonlinear Hall resistance was also observed because of the anisotropic Dirac fermions. The two-carrier model was adopted to analyze the unusual Hall resistance quantitatively. The fitting results yielded carrier densities and mobilities of 3:75 × 10 14 cm -2 and 850 cm 2 ·V -1 ·s -1 , respectively, for holes, and 1.468 × 10 13 cm 2 , 4118 cm 2 ×V -1 ·s -1 , respectively, for electrons, with a hole-dominant conduction at 2.5 K. Hence, an effective mobility can be achieved, which is in reasonable agreement with the effective hole mobility of 1800 cm 2 ×V -1 ×s -1 , extracted from the MR. Further, the angle-dependent MR, proportional to cos θ, where θ is the angle between the external magnetic field and the perpendicular orientation of the sample plane, also implies a high anisotropy of the Fermi surface. Our results about SrMnBi 2 thin films, as one of a new class of AEMnBi 2 and AEMnSb 2 (AE = Ca, Sr, Ba, Yb, Eu) materials, suggest that they have a lot of exotic transport properties to be investigated, and that their high mobility might facilitate electronic device applications.