Charge Relaxation Resistances and Charge Fluctuations in Mesoscopic Conductors

M. Buttiker

DOI: https://doi.org/10.3938/jkps.34.121

1999-02-04

Abstract:A brief overview is presented of recent work which investigates the time-dependent relaxation of charge and its spontaneous fluctuations on mesoscopic conductors in the proximity of gates. The leading terms of the low frequency conductance are determined by a capacitive or inductive emittance and a dissipative charge relaxation resistance. The charge relaxation resistance is determined by the ratio of the mean square dwell time of the carriers in the conductor and the square of the mean dwell time. The contribution of each scattering channel is proportional to half a resistance quantum. We discuss the charge relaxation resistance for mesoscopic capacitors, quantum point contacts, chaotic cavities, ballistic wires and for transport along edge channels in the quantized Hall regime. At equilibrium the charge relaxation resistance also determines via the fluctuation-dissipation theorem the spontaneous fluctuations of charge on the conductor. Of particular interest are the charge fluctuations in the presence of transport in a regime where the conductor exhibits shot noise. At low frequencies and voltages charge relaxation is determined by a nonequilibrium charge relaxation resistance.

Mesoscale and Nanoscale Physics,Disordered Systems and Neural Networks

What problem does this paper attempt to address?

The problems that this paper attempts to solve are related to the charge relaxation process and the dynamic characteristics of charge fluctuations in mesoscopic conductors. Specifically, the author explores the time - dependent relaxation of charge and its spontaneous fluctuations in mesoscopic conductors under gating. These problems have relatively mature theoretical explanations in macroscopic conductors, but at the mesoscopic scale, due to the influence of quantum effects, the charge relaxation process becomes more complex.

### Main problems:
1. **Charge relaxation resistance**: The paper studies how to describe the process of charge relaxation from a non - equilibrium state to an equilibrium state in mesoscopic conductors and introduces a new transport coefficient - charge relaxation resistance (Charge Relaxation Resistance). This resistance determines the dynamic behavior of charge relaxation.

2. **Charge fluctuations**: In the thermal equilibrium state, charge will fluctuate due to thermal excitation and zero - point fluctuations. The paper explores the spectral density of these fluctuations at low frequencies and relates it to the charge relaxation resistance through the fluctuation - dissipation theorem.

3. **Charge fluctuations under transport conditions**: Besides the equilibrium state, the paper also studies the behavior of charge fluctuations in the presence of a transport current. Especially under low - voltage conditions, the sample will exhibit shot noise caused by charge granularity. At this time, charge fluctuations are determined by a non - equilibrium charge relaxation resistance.

### Research objects:
- Mesoscopic capacitors
- Quantum dot contacts
- Chaotic cavities
- Ballistic wires
- Quantum Hall edge states

### Key conclusions:
- In the single - channel case, the charge relaxation resistance is quantified as \( R_q=\frac{h}{2e^2}\) or \( R_q = \frac{h}{4e^2}\), depending on the symmetry and boundary conditions of the system.
- For multi - channel systems, the charge relaxation resistance is no longer quantified but depends on the phase delay time of each channel.
- In the presence of a transport current, charge fluctuations are determined by the non - equilibrium charge relaxation resistance \( R_v\), and its distribution function is different from that of the charge relaxation resistance in the equilibrium state.

### Formula summary:
1. **Charge relaxation resistance**:
\[
R_q=\frac{h}{2e^2}\left(\frac{\sum_n\tau_n^2}{\left(\sum_n\tau_n\right)^2}\right)
\]
where \( \tau_n\) is the average residence time in the \(n\) - th eigenchannel.

2. **Non - equilibrium charge relaxation resistance**:
\[
R_v=\frac{h}{e^2}\frac{\text{Tr}(N_{21}N^\dagger_{21})}{\left(\sum_\gamma\text{Tr}(N_{\gamma\gamma})\right)^2}
\]

3. **Charge fluctuation spectrum**:
\[
S_{QQ}(\omega)=2C_\mu^2R(\omega, V)\hbar|\omega|
\]
where \( C_\mu\) is the electrochemical capacitance and \( R(\omega, V)\) is the frequency - and voltage - dependent resistance.

Through these studies, the author reveals the unique properties of charge relaxation and fluctuations in mesoscopic conductors and provides a theoretical basis for understanding the dynamic behavior in mesoscopic electronic devices.