Electroless Copper Plating Process of N, N, N′, N′-tetrakis (2-Hydroxypropyl) Ethylenediamine System with High Plating Rate
Zheng Ya-jie,Zou Wei-hong,Yi Dan-qing,Gong Zhu-qing,Li Xin-hai
DOI: https://doi.org/10.1007/s11771-005-0377-2
2005-01-01
Abstract:Electroless copper plating process of N, N, N′, N′-tetrakis (2-hydroxypropyl) ethylenediamine (THPED) chelating agent was researched comprehensively. The results indicate that plating rate decreases with the increase of concentration for THPED, CuSO4 · 5H2O and HCHO, pH value and bath temperature. The additive of K4[Fe(CN)6] · 3H2O, 2, 2′-dipyridyl and polyethylene glycol(PEG) decrease plating rate and K4[Fe(CN)6] · 3H2O has a bad effect on deposits quality, but 2, 2′-dipyridyl and PEG make deposits quality improve greatly. Low concentration of 2-mercaptobenzothiozole (2-MBT) increases plating rate and improves deposits quality, but decreases plating rate and worsens deposits quality when 2-MBT reaches 5 mg/L. The optimal conditions of this electroless copper plating process are that the concentration of THPED, HCHO, CuSO4 · 5H2O, PEG, 2, 2′-dipyridyl and 2-MBT are 16.8 g/L, 16.0 mL/L, 13.3 g/L, 0.5 g/L, 5.0 mg/L and 2.0 mg/L, respectively, pH value is 12.75, bath temperature is 30 °C. Plating rate reaches 9.54 µm/h plating for 30 min in the bath. The SEM images demonstrate that the surface of copper film is smooth and the crystal is fine.