Abstract:The electronic band structure can change with temperature in Mott and Kondo insulators, even without a phase transition. Here, to clarify the underlying mechanism, the spectral function at nonzero temperature is studied. By considering selection rules, the spin excited states of Mott and Kondo insulators, whose excitation energies are lower than the charge gap, are shown to emerge in the electronic spectral function at nonzero temperature, exhibiting momentum-shifted magnetic dispersion relations from the band edges, as in the case of the doping-driven Mott transition at zero temperature. Based on this characteristic, we interpret the numerical results for temperature-driven change in band structure in the one- and two-dimensional and ladder Hubbard models and one-dimensional periodic Anderson model at half filling obtained using cluster perturbation theory with the low-temperature Lanczos method. This characteristic also explains why the band structures can change with temperature even in the energy regime far higher than the temperature and why spectral weights emerge in the energy regime within the band gap, where excitation energies are lower than the lowest electronic excitation energy from the ground state. Furthermore, if the band width of the spin excitation is comparable to the band gap, the emergent electronic modes can cross the Fermi level and gain spectral weight as the temperature increases, which leads to an insulator-metal crossover. These features are primarily caused by the spin excited states that are transparent in electronic measurements at zero temperature, in contrast to the conventional view where thermal effects on electron-added and removed states and static spin correlations are considered to mainly affect the band structure. This innovative perspective provides a different understanding from the conventional view on electronic states at nonzero temperatures.

Temperature-Induced Metal-Insulator Transition in a Narrow-Band Model with Non-Equivalent Hubbard Subbands at Half-Filling

Metal-Insulator Transition in a Generalized Hubbard Model with Correlated Hopping at Half-Filling

Electron Correlations in Narrow Energy Bands: Ground State Energy and Metal-Insulator Transition

Finite-Temperature Optical Conductivity of the Two-Dimensional Hubbard Model

Extended Metal-Insulator Crossover with Strong Antiferromagnetic Spin Correlation in Half-Filled 3D Hubbard Model

Unusual low-temperature behavior in the half-filled band of the one-dimensional extended Hubbard model in atomic limit

Electrical Conductivity of the Two-Dimensional Half-Filled Hubbard Model

One-Band Hubbard Model With Hopping Asymmetry And The Effective Theory At Finite U: Phase Diagram And Metal-Insulator Transition

Metal-insulator transition in 2D: a role of the upper Habbard band

Quantum Phase Transitions in 2D--dimensional paramagnetic half--filled Hubbard model

Temperature-driven change in band structure reflecting spin-charge separation of Mott and Kondo insulators

On Metal-Insulator Transitions due to Self-Doping

Temperature dependence of antiferromagnetic order in the Hubbard model

Two-dimensional extended Hubbard model: doping, next-nearest neighbor hopping and phase diagrams

Correlation-driven Lifshitz transition and orbital order in a two-band Hubbard model

Correlations in a band insulator

Antiferromagnetic Phase Transition in the Quasi-Two-Dimensional Hubbard Model at Half Filling

Transition from Band Insulator to Mott Insulator in One Dimension: Critical Behavior and Phase Diagram

Band Effects on the Conductivity for a Two-Band Hubbard Model

Local and Nonlocal Electronic Correlations at the Metal-Insulator Transition in the Two-Dimensional Hubbard Model