One-Band Hubbard Model With Hopping Asymmetry And The Effective Theory At Finite U: Phase Diagram And Metal-Insulator Transition

Yuchuan Wen,Yue Yu
DOI: https://doi.org/10.1103/PhysRevB.72.045130
IF: 3.7
2005-01-01
Physical Review B
Abstract:We study the one-band Hubbard model at half filling with hopping asymmetry and its effective model at finite but large U up to the second order of t(mix)/U. Two variational wave functions, the resonating valence bond (RVB) wave function and antiferromagnetic (AF) RVB coexisted wave function, are studied by variational Monte Carlo method on LxL square lattices up to L=12. Based on these two wave functions, the phase diagrams for both models are presented. For the Hubbard model, we find that there is a metal-insulator transition when the hopping parameter t(mix) which changes the local double occupant vanishes while only a metal-insulator crossover is explored for any finite t(mix). For the effective model in which the perturbation expansion is up to the second order of t(mix)/U, a clear metal-insulator transition can be identified for both variational wave functions and the phase diagram can be drawn accordingly. In both models, we find that the systems are dominated by AF-RVB wave function when U is large while the RVB wave function is favored when U is small.
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