Abstract:When an insulating material is subjected to electron irradiation, it produces a secondary emission the yield of which varies from a few percent to very high values (up to 24 per incoming electron) depending on the material and the experimental conditions. If the secondary electron emission yield is less than one, a net negative charge remains trapped in the sample. In this case, the study of the electric charges trapping properties of the material becomes possible. This article describes how it is possible to use a secondary electron microscope (SEM) as a device to perform such a study. In Sec. II, the effect of a net negative trapped charge resulting (from the injection of typically 50 pC) on the imaging process of the SEM has been described. It has been shown that when the trapped charge is high enough, it acts as a mirror reflecting the incoming electron beam which is deflected somewhere in the vacuum chamber of the microscope. A global qualitative description of the image displayed on the screen is first presented. Then electron trajectories are quantitatively studied by using the Rutherford scattering cross section in the case of a point charge. When the charge is extended, a numeric simulation has been done in order to predict the validity range of the previous model. Once the trajectories have been calculated, the connection between the remarkable elements of the image and the quantity of trapped charges has been established. Moreover, this technique allows one to study the lateral dimension of the trapped charge zone and to measure the surface potential. In Sec. III, the discussion is first focused on some precautions to be taken concerning the sample preparation before the experiment is performed. It has been shown that surface defects due either to contamination layers or machining change the trapping properties of single-crystals ceramics such as MgO and Al2O3. A cleaning procedure is proposed that consists of annealing the sample at 1500 °C for 4 h in order to heal the crystalline defects and a heating at 400 °C in the vacuum chamber of the SEM to remove the contamination layers. Finally, the effect of the temperature on the trapping properties of pure and chromium doped sapphire has been studied in relation with the chromium concentration. It is shown that temperature behavior of trapping is in relation with the chromium concentration. In the pure sapphire trapping is activated below −16 °C, in 500 ppm rubis it is below −9.5 °C due to isolated chromium atoms, and in the 8000 ppm rubis the critical trapping temperature rises to 3.7 °C due to Cr3+ pairs. The interpretation of the role played by chromium on trapping is based on the experimental study of the fluorescence of chromium atoms and pairs as a function of concentration.

Impurity nuclear spin-lattice relaxation suppression and charge exchange of chromium ions in a gamma-irradiated ruby crystal

Spin thermometry and spin relaxation of optically detected Cr3+ ions in ruby Al2O3

Influence of Crystalline Imperfections on Spin-Lattice Relaxation in Ruby

Photoinduced Local Lattice Vibrations in a Ruby Crystal under Optical Pumping of the 2T1 State

Nmr Spin Lattice Relaxation in Nitrogen-Doped 6h Silicon Carbide

Spin-Lattice Interaction in Ruby Measured by Electron Spin Resonance in Uniaxially Stressed Crystals

Phonon contribution to nuclear spin diffusion in ruby crystal estimated by lattice dynamics calculations

Structural relaxations around Ti, Cr and Fe impurities in alpha-Al2O3 probed by x-ray absorption near edge structure combined with first-principles calculations

Imaging and quantum efficiency measurement of chromium emitters in diamond

Order and disorder around Cr$^{3+}$ in chromium doped persistent luminescence AB$_2$O$_4$ spinels

Nuclear magnetic resonance relaxometry to monitor chromium (VI) reduction by hydrogen peroxide, ascorbic acid, and aluminum powder

Effects of Cr3+ Concentration on the Crystallinity and Optical Properties of Cr-doped Al2O3 Powders by Solid-State Reaction Method

Maximum spin polarization in chromium dimer cations as demonstrated by x-ray magnetic circular dichroism spectroscopy

Ultrasensitive microwave spectroscopy of paramagnetic impurities of sapphire crystals at millikelvin temperatures

Chromium agglomeration induced by Fe + ion irradiation of Fe-10at%Cr

Coherent population trapping in ruby crystal at room temperature

Chromium in silicon carbide: electron paramagnetic resonance studies

Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide

Distinctive features of diffusion-controlled radiation defect recombination in stoichiometric magnesium aluminate spinel single crystals and transparent polycrystalline ceramics

Space charge measurement in a dielectric material after irradiation with a 30 kV electron beam: Application to single-crystals oxide trapping properties

Microbeam x-ray absorption spectroscopy study of chromium in large-grain uranium dioxide fuel