Millimeter-Wave Devices and Circuit Blocks up to 104 GHz in 90 nm CMOS

Babak Heydari,Mounir Bohsali,Ehsan Adabi,Ali M. Niknejad

DOI: https://doi.org/10.1109/jssc.2007.908743

2007-12-01

Abstract:A systematic methodology for layout optimization of active devices for millimeter-wave (mm-wave) application is proposed. A hybrid mm-wave modeling technique was developed to extend the validity of the device compact models up to 100 GHz. These methods resulted in the design of a customized 90 nm device layout which yields an extrapolated $f _{\max}$ of 300 GHz from an intrinsic device $f _{T} = {\hbox{100~GHz}}$. The device is incorporated into a low-power 60 GHz amplifier consuming 10.5 mW, providing 12.2 dB of gain, and an output $P _{\rm{-1db}}$ of $+$4 dBm. An experimental three-stage 104 GHz tuned amplifier has a measured peak gain of 9.3 dB. Finally, a Colpitts oscillator operating at 104 GHz delivers up to ${-}$5 dBm of output power while consuming 6.5 mW.

engineering, electrical & electronic