Abstract:Three‐inch diameter, 3 kg mass, high‐purity germanium crystals are grown with a net carrier concentration of equivalent to 1 part per trillion and a dislocation density (etch pit density values) of 103–104 cm−2. These single crystals are needed for the fabrication of radiation detectors to be used in astrophysics and particle physics studies. High‐purity germanium (HPGe) single crystals find their applications as radiation detectors especially for spectroscopy of high‐energy photons and particles in nuclear physics. Growing "detector‐grade" HPGe single crystals, with tailored structural defects and controlled impurity content, uniform throughout the crystal is a challenging task in this type of crystalline semiconductor material. All different process steps for HPGe, namely, i) reducing germanium dioxide powder into Ge metal; ii) zone refining of intrinsic source material (6 N) up to an ultrahigh purity (13 N); iii) Czochralski growth of high‐purity single crystals, are developed in house. A specific preparatory coating process for zone refining is entrenched as part of this work. Gallium, a dominant impurity usually found in HPGe, can be avoided. Using these advanced process know‐hows, a technology to grow volume Ge single crystals of large diameter (3 in.) with very high purity (net carrier concentration ≈ 5 × 1010 cm−3 or equivalent to 1 part per trillion level) is successfully developed. The zone‐refined Ge bars and the crystals show p‐type conductivity. Some crystals exhibit n‐type conductivity, and n–p or p–n transition is encountered in a single growth experiment. Besides the first results of encompassing very high‐purity crystals with uniform diameter, a controlled dislocation density (≈104 cm−2) can be realized.

Single crystalline high-purity germanium bars grown by the zone-refining technique

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices

Zone Refinement of Germanium Crystals

Zone Refining High-Purity Germanium

Characterization of polycrystalline zone-refined ingots of high-purity germanium

Production of germanium stable isotopes single crystals

Integrated analysis and design optimization of germanium purification process using zone-refining technique

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Origin and Control of the Dominant Impurities in High-Purity Germanium

Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

Amorphous silica containers for germanium ultrapurification by zone refining

Germanium in Czochralski Silicon

Crucible-free Pulling of Germanium Crystals

Preparation of Single-Crystal Isotopically Enriched 70Ge by a Hydride Method

Simulation for purification process of high pure germanium by zone refining method

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

High Purity Germanium, a Review on Principle Theories and Technical Production Methodologies