Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement
Bader Alharthi,Joshua M. Grant,Wei Dou,Perry C. Grant,Aboozar Mosleh,Wei Du,Mansour Mortazavi,Baohua Li,Hameed Naseem,Shui-Qing Yu
DOI: https://doi.org/10.1007/s11664-018-6315-5
IF: 2.1
2018-05-03
Journal of Electronic Materials
Abstract:Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal–oxide–semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm−2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied