Abstract:Bottom‐gate and bottom‐contact n‐type and p‐type organic field‐effect transistors (OFETs) are simultaneously obtained by combining the ambipolar semiconductor film of P4FTVT‐C32 with indium tin oxide (ITO) source/drain (S/D) electrodes electrodes. P4FTVT‐C32 thin film exhibits n‐type unipolar property with the low work functional (WF) ITO and p‐type unipolar property with the high WF ITO modified by polyethylenimine ethoxylated (PEIE) and HCl:InCl3, respectively. This method offers great promise for next‐generation organic semiconductors integrated circuits. Bottom‐gate and bottom‐contact n‐type and p‐type organic field‐effect transistors (OFETs) are simultaneously obtained by combining the ambipolar semiconductor film of diketopyrrolopyrrole‐based conjugated polymer (P4FTVT‐C32) with indium tin oxide (ITO) source/drain (S/D) electrodes. P4FTVT‐C32 thin film exhibits n‐type unipolar property with the low work functional (WF) ITO S/D electrodes modified by polyethylenimine ethoxylated (PEIE) and it exhibits p‐type unipolar property with the high WF ITO S/D electrodes modified by HCl:InCl3. Hence, complementary inverters with transition voltages near VDD/2 and the maximum gain of 138 converting "1" state input into "0" state output are achieved by two different modifications via screen printing on ITO electrodes and then, only one‐time bar coating of P4FTVT‐C32. To further improve the performance and the uniformity of the OFET devices, the modification of octadecyltrichlorosilane (OTS) is also introduced. This work provides an easy‐handling method for the fabrication of low‐cost, high performance organic electronic devices and integrated circuits.

Evaluating the performance of p-type organic field-effect transistor using different source–drain electrodes

High Performance Organic Field-Effect Transistor with Oxide/Metal Bilayer Electrodes

C8‐BTBT‐C8 Thin‐Film Transistors Based on Micro‐Contact Printed PEDOT:PSS/MWCNT Electrodes

Performance enhancement of p-type organic field-effect transistor through introducing organic buffer layers

Inkjet-Printed Organic Electrodes for Bottom-Contact Organic Field-Effect Transistors

High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

Enhanced Performance of Organic Field-Effect Transistors by a Molecular Dopant with High Electron Affinity.

Preparation of Nanocomposite-Based High Performance Organic Field Effect Transistor via Solution Floating Method and Mechanical Property Evaluation

High-Performance Low-Cost Organic Field-Effect Transistors With Chemically Modified Bottom Electrodes

Organic field-effect transistors integrated with Ti2CTx electrodes

Efficient modification of Cu electrode with nanometer-sized copper tetracyanoquinodimethane for high performance organic field-effect transistors.

Synergistic Effect of Multi-Walled Carbon Nanotubes and Ladder-Type Conjugated Polymers on the Performance of N-Type Organic Electrochemical Transistors

Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer

Investigation of the Performance of Donor–Acceptor Conjugated Polymers in Electrolyte‐Gated Organic Field‐Effect Transistors

Organic field-effect transistors with nearly non-injection barrier from source/drain electrodes to pentacene

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same Ambipolar Organic Semiconductor and ITO S/D Electrodes

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors