Dynamic Scaling in Epitaxial Growth

S. Das Sarma

DOI: https://doi.org/10.48550/arXiv.cond-mat/9705118

1997-05-29

Abstract:A review is provided of our current theoretical understanding of dynamic scaling in nonequilibrium interface growth as, for example, in MBE growth under ultrahigh vacuum deposition conditions.

Statistical Mechanics

What problem does this paper attempt to address?

Scale decomposition of molecular beam epitaxy

Z. Moktadir

DOI: https://doi.org/10.1088/0953-8984/20/23/235240

2007-10-11

Abstract:In this work, a study of epitaxial growth was carried out by means of wavelets formalism. We showed the existence of a dynamic scaling form in wavelet discriminated linear MBE equation where diffusion and noise are the dominant effects. We determined simple and exact scaling functions involving the scale of the wavelets when the system size is set to infinity. Exponents were determined for both, correlated and uncorrelated noise. The wavelet methodology was applied to a computer model simulating the linear epitaxial growth; the results showed a very good agreement with analytical formulation. We also considered epitaxial growth with the additional Ehrlich$-$Schwoebel effect. We characterized the coarsening of mounds formed on the surface during the nonlinear phase using the wavelet power spectrum. The latter have an advantage over other methods in the sense that one can track the coarsening in both frequency (or scale) space and real space simultaneously. We showed that the averaged wavelet power spectrum (also called scalegram) over all the positions on the surface profile, identified the existence of a dominant scale $a^*$, which increases with time following a power law relation of the form $a^* \sim t^n$, where $n\simeq 1/3$.

Materials Science
Defect Formation and Crossover Behavior in the Dynamic Scaling Properties of Molecular Beam Epitaxy

S. DasSarma,C.J. Lanczycki,S.V. Ghaisas,J.M. Kim

DOI: https://doi.org/10.48550/arXiv.cond-mat/9401043

1994-01-21

Abstract:Stochastic simulation results, appropriate for Molecular Beam Epitaxy, involving ballistic deposition and thermally activated Arrhenius diffusion of adatoms are presented for one- and two-dimensional substrates, allowing for overhangs and bulk vacancies. The asymptotic Kardar-Parisi- Zhang universality is found to be triggered by a sudden nucleation of large-scale defect formation in the growing film that shows a distinct dependence on dimensionality. The pre-nucleation transient behavior, which may be of experimental relevance due to the low defect content, is associated with standard solid-on-solid universality classes.

Condensed Matter
Multiscale Kinetic Monte-Carlo for Simulating Epitaxial Growth

J. P. DeVita,L. M. Sander,P. Smereka

DOI: https://doi.org/10.1103/PhysRevB.72.205421

2005-09-01

Abstract:We present a fast Monte-Carlo algorithm for simulating epitaxial surface growth, based on the continuous-time Monte-Carlo algorithm of Bortz, Kalos and Lebowitz. When simulating realistic growth regimes, much computational time is consumed by the relatively fast dynamics of the adatoms. Continuum and continuum-discrete hybrid methods have been developed to approach this issue; however in many situations, the density of adatoms is too low to efficiently and accurately simulate as a continuum. To solve the problem of fast adatom dynamics, we allow adatoms to take larger steps, effectively reducing the number of transitions required. We achieve nearly a factor of ten speed up, for growth at moderate temperatures and large D/F.

Materials Science
Dynamic Scaling Phenomena in Growth Processes

Mehran Kardar

DOI: https://doi.org/10.1016/0921-4526%2895%2900905-1

1995-07-08

Abstract:Inhomogeneities in deposition may lead to formation of rough surfaces, whose height fluctuations can be probed directly by scanning microscopy, or indirectly by scattering. Analytical or numerical treatments of simple growth models suggest that, quite generally, the height fluctuations have a self-similar character. The roughness and dynamic exponents are expected to be universal; depending only on the underlying mechanism that generates self-similar roughness. Despite its ubiquitous occurrence in theory and simulations, experimental confirmations of dynamic scaling have been rare. I shall briefly review the theoretical foundations of dynamic scaling, and suggest possible reasons for discrepancies with experimental results.

Condensed Matter
Dynamic Calculations for Rheed from Mbe Growing Surfaces .3. Heteroepitaxial Growth and Interface Formation

LM PENG,MJ WHELAN

DOI: https://doi.org/10.1098/rspa.1991.0144

1991-01-01

Abstract:The birth-death growth model previously used in parts I and II for simulating molecular beam epitaxy growth of a single type of atom species has been generalized to describe the growth of heterostructures involving the deposition and diffusion of multiple atomic species. Detailed dynamical reflection high-energy electron diffraction (RHEED) calculations have been made to investigate various aspects of RHEED intensity oscillations, including the measurement of growth rate and alloy composition, interface and recovery effects, control of quantum well widths, as well as changes of the character of RHEED intensity oscillations.
Layer by layer epitaxy in limited mobility nonequilibrium models of surface growth

P. Punyindu Chatraphorn,S. Das Sarma

DOI: https://doi.org/10.48550/arXiv.cond-mat/0203105

2002-03-06

Abstract:We study, using noise reduction techniques, layer by layer epitaxial growth in limited mobility solid-on-solid nonequilibrium surface growth models, which have been introduced in the context of kinetic surface roughening in ideal molecular beam epitaxy. Multiple hit noise reduction and long surface diffusion length lead to qualitatively similar layer by layer epitaxy in 1+1 and 2+1 dimensional limited mobility growth simulations. We discuss the dynamic scaling characteristics connecting the transient layer by layer growth regime with the asymptotic kinetically rough growth regime.

Statistical Mechanics,Materials Science
First-principles studies of kinetics in epitaxial growth of III-V semiconductors

P. Kratzer,E. Penev,M. Scheffler

DOI: https://doi.org/10.1007/s003390101057

2002-02-18

Abstract:We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE) of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs(001), a growth model is presented that builds on results of DFT calculations for molecular processes on the beta2-reconstructed GaAs(001) surface, including adsorption, desorption, surface diffusion and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to model MBE growth of GaAs from beams of Ga and As_2 in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As_2 molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs on GaAs(001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field around an island is found to cause a slowing-down of material transport from the substrate towards the island and thus helps to achieve more homogeneous island sizes.

Materials Science
Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

L. -M. Peng,M. J. Whelan

DOI: https://doi.org/10.1017/s0424820100135605

1991-01-01

Abstract:Reflection high energy electron diffraction (RHEED) has become well established as one of the most powerful and versatile techniques for growth and surface studies of semiconductor films prepared by molecular beam epitaxy (MBE). In particular the technique of RHEED intensity oscillations has been used routinely to calibrate beam fluxes and alloys composition and to control the thicknesses of quantum wells and superlattice layers.Although several interpretations have been proposed for the strong oscillations in RHEED intensity during MBE growth, full dynamical calculations have been done only for an artificial surface consisting of a periodic array of surface steps. The enormous amount of computation involved prevents the dynamical theory being applied to a more realistic epitaxically growing system. In this paper we report a simple and practical method for calculating dynamical RHEED from MBE growing surfaces.We first consider epitaxial growth on a low-index surface. The growth is simulated by using a perfect layer growth model and a diffusive growth model.
Monitoring growth with X-ray diffraction

DOI: https://doi.org/10.1098/rsta.1993.0108

1993-09-15

Abstract:With the introduction of high intensity synchrotron radiation sources, X-ray diffraction has become established as a powerful probe of surface crystallography. Many surface structures have been solved with progressively larger unit meshes. More recently, the technique has been extended to provide real time monitoring of surfaces during epitaxial growth. The weak scattering of X-rays allows a simple interpretation of measured intensities through the kinematic approximation, thus giving a direct and immediate insight into the atomic geometry. The technique is not limited to the solid-vacuum interface and has potentially wide application. Thus it may be used to monitor the growth in a OMVPE reaction chamber and can probe atomic arrangements at buried interfaces such as a delta doping layer. The use of X-ray scattering for the study of epitaxial growth on semiconductor surfaces is reviewed with examples taken from recent work.
Dynamic growth/etching model for the synthesis of two-dimensional transition metal dichalcogenides via chemical vapour deposition

Erik Pollmann,André Maas,Dave Marnold,Alfred Hucht,Rahel-Manuela Neubieser,Mike Stief,Lukas Madauß,Marika Schleberger

DOI: https://doi.org/10.1088/2053-1583/ac5ec5

IF: 6.861

2022-04-11

2D Materials

Abstract:Abstract The preparation of two-dimensional transition metal dichalcogenides on an industrially relevant scale will rely heavily on bottom-up methods such as chemical vapour deposition. In order to obtain sufficiently large quantities of high-quality material, a knowledge-based optimization strategy for the synthesis process must be developed. A major problem that has not yet been considered is the degradation of materials by etching during synthesis due to the high growth temperatures. To address this problem, we introduce a mathematical model that accounts for both growth and, for the first time, etching to describe the synthesis of two-dimensional transition metal dichalcogenides. We consider several experimental observations that lead to a differential equation based on several terms corresponding to different supply mechanisms, describing the time-dependent change in flake size. By solving this equation and fitting two independently obtained experimental data sets, we find that the flake area is the leading term in our model. We show that the differential equation can be solved analytically when only this term is considered, and that this solution provides a general description of complex growth and shrinkage phenomena. Physically, the dominance suggests that the supply of material via the flake itself contributes most to its net growth. This finding also implies a predominant interplay between insertion and release of atoms and their motion in the form of a highly dynamic process within the flake. In contrast to previous assumptions, we show that the flake edges do not play an important role in the actual size change of the two-dimensional transition metal dichalcogenide flakes during chemical vapour deposition.

materials science, multidisciplinary
Complex-Temperature Properties of the Ising Model on 2D Heteropolygonal Lattices

Victor Matveev,Robert Shrock

DOI: https://doi.org/10.1088/0305-4470/28/18/014

1995-03-06

Abstract:Using exact results, we determine the complex-temperature phase diagrams of the 2D Ising model on three regular heteropolygonal lattices, $(3 \cdot 6 \cdot 3 \cdot 6)$ (kagomé), $(3 \cdot 12^2)$, and $(4 \cdot 8^2)$ (bathroom tile), where the notation denotes the regular $n$-sided polygons adjacent to each vertex. We also work out the exact complex-temperature singularities of the spontaneous magnetisation. A comparison with the properties on the square, triangular, and hexagonal lattices is given. In particular, we find the first case where, even for isotropic spin-spin exchange couplings, the nontrivial non-analyticities of the free energy of the Ising model lie in a two-dimensional, rather than one-dimensional, algebraic variety in the $z=e^{-2K}$ plane.

High Energy Physics - Lattice,Condensed Matter
Understanding epitaxial growth of two-dimensional materials and their homostructures.

Can Liu,Tianyao Liu,Zhibin Zhang,Zhipei Sun,Guangyu Zhang,Enge Wang,Kaihui Liu

DOI: https://doi.org/10.1038/s41565-024-01704-3

IF: 38.3

2024-01-01

Nature Nanotechnology

Abstract:The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in material synthesis. Epitaxial growth, a prominent synthesis strategy, enables the production of large-area, high-quality 2D films compatible with advanced integrated circuits. Typical 2D single crystals, such as graphene, transition metal dichalcogenides and hexagonal boron nitride, have been epitaxially grown at a wafer scale. A systematic summary is required to offer strategic guidance for the epitaxy of emerging 2D materials. Here we focus on the epitaxy methodologies for 2D vdW materials in two directions: the growth of in-plane single-crystal monolayers and the fabrication of out-of-plane homostructures. We first discuss nucleation control of a single domain and orientation control over multiple domains to achieve large-scale single-crystal monolayers. We analyse the defect levels and measures of crystalline quality of typical 2D vdW materials with various epitaxial growth techniques. We then outline technical routes for the growth of homogeneous multilayers and twisted homostructures. We further summarize the current strategies to guide future efforts in optimizing on-demand fabrication of 2D vdW materials, as well as subsequent device manufacturing for their industrial applications.
van der Waals Epitaxy of Transition Metal Dichalcogenides via Molecular Beam Epitaxy: Looking Back and Moving Forward

Deependra Kumar Singh,Govind Gupta

DOI: https://doi.org/10.1039/d2ma00352j

2022-06-29

Materials Advances

Abstract:Initiated by the discovery of graphene, tremendous research advances have been witnessed in the field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) in the past few years. The unique optical and electrical properties of these layered TMDCs due to their well-defined low dimensionalities make them promising building blocks for next-generation electronics. Recently, a lot of research interest has been focussed on the growth of high quality and large-area epilayers of several TMDCs using molecular beam epitaxy (MBE), owing to its ultra-high vacuum environment. The capability to precisely control the composition, thickness, and structural phases of TMDCs by MBE makes it suitable for studying fundamental sciences, investigating technological applications, and exploring new physics, which possibly could lead to fascinating applications. In the current perspective, an overview of the basic properties of TMDCs has been discussed, followed by the recent advancements in this area of the growth of TMDC thin films by MBE. Finally, the authors' viewpoints highlight this emerging research field's key challenges and opportunities.
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Huije Ryu,Hyunik Park,Joung-Hun Kim,Fan Ren,Jihyun Kim,Gwan-Hyoung Lee,Stephen J. Pearton

DOI: https://doi.org/10.1063/5.0090373

IF: 15

2022-09-09

Applied Physics Reviews

Abstract:Epitaxial growth, a crystallographically oriented growth induced by the chemical bonding between crystalline substrate and atomic building blocks, has been a key technique in the thin-film and heterostructure applications of semiconductors. However, the epitaxial growth technique is limited by different lattice mismatch and thermal expansion coefficients of dissimilar crystals. Two-dimensional (2D) materials with dangling bond-free van der Waals surfaces have been used as growth templates for the hetero-integration of highly mismatched materials. Moreover, the ultrathin nature of 2D materials also allows for remote epitaxial growth and confinement growth of quasi-2D materials via intercalation. Here, we review the hetero-dimensional growth on 2D substrates: van der Waals epitaxy (vdWE), quasi vdWE, and intercalation growth. We discuss the growth mechanism and fundamental challenges for vdWE on 2D substrates. We also examine emerging vdWE techniques that use epitaxial liftoff and confinement epitaxial growth in detail. Finally, we give a brief review of radiation effects in 2D materials and contrast the damage induced with their 3D counterparts.

physics, applied
Heteroepitaxial Diamond Growth from the Gas Phase: Problems and Prospects (Review)

S. A. Linnik

DOI: https://doi.org/10.1134/S0020441221010280

2021-04-17

Instruments and Experimental Techniques

Abstract:The current state of research and new approaches to solving the problem of heteroepitaxy of diamond films from the gas phase are considered. The features of diamond growth from the gas phase, the nucleation processes, texturing, and the main fundamental problems and barriers of heteroepitaxy of single-crystal diamond are described. Recent achievements and potentially promising approaches in this area are considered.

engineering, multidisciplinary,instruments & instrumentation
Wafer Scale Growth of Single Crystalline Two-Dimensional van der Waals Materials

Chetna Gautam,Baishali Thakurta,Monalisa Pal,Anup K. Ghosh,Anupam Giri

DOI: https://doi.org/10.1039/d3nr06678a

IF: 6.7

2024-02-23

Nanoscale

Abstract:Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystalline atomically thin highly uniform films are indispensable. In this mini-review, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Continuum Theory of Epitaxial Crystal Growth. I

E Weinan,Nung Kwan Yip

DOI: https://doi.org/10.1023/A:1010361711825

2001-01-01

Journal of Statistical Physics

Abstract:We present various continuum limits to describe epitaxial thin film growth. We consider a hierarchy of models which can take into account the diffusion of terrace adatoms, attachment and detachment of edge adatoms, vapor phase diffusion and the effect of multiple species. The starting point is the Burton–Cabrera–Frank type step flow model. We have obtained partial differential equations in the form of a coupled system of diffusion equation for the adatom density and a Hamilton–Jacobi equation for the film height function. This is supplemented with appropriate boundary conditions at the continuum level to describe the growth at the peaks and valleys on the film. The results here can be used in a macroscopic description of thin film growth.
A continuum description of the energetics and evolution of stepped surfaces in strained nanostructures

V.B. Shenoy,L.B. Freund

DOI: https://doi.org/10.1016/S0022-5096%2802%2900015-7

2002-03-26

Abstract:As a departure from existing continuum approaches for describing the stability and evolution of surfaces of crystalline materials, this article provides a description of surface evolution based on the physics of the main feature imposed by the discrete nature of the material, namely, crystallographic surface steps. It is shown that the formation energy of surface steps depends on the sign of extensional strain of the crystal surface, and this behavior plays a crucial role in surface evolution. The nature of this dependence implies that there is no energetic barrier to nucleation of islands on the growth surface during deposition, and that island faces tend toward natural orientations which have no counterpart in unstrained materials. This behavior is expressed in terms of a small number of parameters that can be estimated through atomistic analysis of stepped surfaces. The continuum framework developed is then applied to study the time evolution of surface shape of an epitaxial film being deposited onto a substrate. The kinetic equation for mass transport is enforced in a weak form by means of a variational formulation [...].

Condensed Matter
Anomalous dynamic scaling of Ising interfaces

E. Rodriguez-Fernandez,S. N. Santalla,M. Castro,R. Cuerno

2024-05-14

Abstract:Until very recently, the asymptotic occurrence of intrinsic anomalous scaling has been expected to require concomitant effects for kinetically rough interfaces, like quenched disorder or morphological instabilities. However, counterexamples have been recently reported for simpler situations dominated by time-dependent noise, as in the discrete growth system associated with an Ising model proposed by H.\ Dashti-Naserabadi {\em et al.}\ [Phys.\ Rev.\ E {\bf 100}, 060101(R) (2019)], who assessed the equilibrium behavior of the model. Here we revisit this system to characterize its time-dependent behavior in two and three dimensions (one-and two-dimensional interfaces, respectively). While the 3D case seems dominated by a fast evolution beyond critical dynamics, in the 2D case numerical simulations of an associated time-dependent Ginzburg-Landau equation retrieve the same static (roughness) exponents and the same intrinsic anomalous scaling Ansatz as in the equilibrium case, throughout the full time evolution. However, the dynamic exponent is seen to cross over between two different values, none of which enables identification with previously known universality classes of kinetic roughening. Simulations for larger system sizes moreover suggest breakdown of scaling behavior at the largest scales, suggesting that the previously reported scaling behavior may be effective and restricted to relatively small systems.

Statistical Mechanics
Dynamics of Antimonene–Graphene Van Der Waals Growth

Matthieu Fortin‐Deschênes,Robert M. Jacobberger,Charles‐Antoine Deslauriers,Olga Waller,Étienne Bouthillier,Michael S. Arnold,Oussama Moutanabbir

DOI: https://doi.org/10.1002/adma.201900569

IF: 29.4

2019-04-10

Advanced Materials

Abstract:Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low‐energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by a self‐limiting lateral growth with morphology sensitive to the deposition rate. Large 2D layers are observed at high deposition rates, whereas lower growth rates trigger an increased multilayer nucleation at the edges as they become aligned with the Z2 orientation leading to atoll‐like islands with thicker, well‐defined bands. This complexity of the vdW growth is elucidated based on the interplay between the growth rate, surface diffusion, and edges orientation. This understanding lays the groundwork for a better control of the growth of vdW heterostructures, which is critical to their large‐scale integration.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Dynamic Scaling in Epitaxial Growth

Scale decomposition of molecular beam epitaxy

Defect Formation and Crossover Behavior in the Dynamic Scaling Properties of Molecular Beam Epitaxy

Multiscale Kinetic Monte-Carlo for Simulating Epitaxial Growth

Dynamic Scaling Phenomena in Growth Processes

Dynamic Calculations for Rheed from Mbe Growing Surfaces .3. Heteroepitaxial Growth and Interface Formation

Layer by layer epitaxy in limited mobility nonequilibrium models of surface growth

First-principles studies of kinetics in epitaxial growth of III-V semiconductors

Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

Monitoring growth with X-ray diffraction

Dynamic growth/etching model for the synthesis of two-dimensional transition metal dichalcogenides via chemical vapour deposition

Complex-Temperature Properties of the Ising Model on 2D Heteropolygonal Lattices

Understanding epitaxial growth of two-dimensional materials and their homostructures.

van der Waals Epitaxy of Transition Metal Dichalcogenides via Molecular Beam Epitaxy: Looking Back and Moving Forward

Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth

Heteroepitaxial Diamond Growth from the Gas Phase: Problems and Prospects (Review)

Wafer Scale Growth of Single Crystalline Two-Dimensional van der Waals Materials

Continuum Theory of Epitaxial Crystal Growth. I

A continuum description of the energetics and evolution of stepped surfaces in strained nanostructures

Anomalous dynamic scaling of Ising interfaces

Dynamics of Antimonene–Graphene Van Der Waals Growth