Dynamic Calculations for Rheed from Mbe Growing Surfaces .3. Heteroepitaxial Growth and Interface Formation

LM PENG,MJ WHELAN
DOI: https://doi.org/10.1098/rspa.1991.0144
1991-01-01
Abstract:The birth-death growth model previously used in parts I and II for simulating molecular beam epitaxy growth of a single type of atom species has been generalized to describe the growth of heterostructures involving the deposition and diffusion of multiple atomic species. Detailed dynamical reflection high-energy electron diffraction (RHEED) calculations have been made to investigate various aspects of RHEED intensity oscillations, including the measurement of growth rate and alloy composition, interface and recovery effects, control of quantum well widths, as well as changes of the character of RHEED intensity oscillations.
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