Abstract:Reflectance anisotropy (RA) and reflection high energy electron diffraction (RHEED) were used simultaneously to study the growth of Si and SiGe on Si(001) surfaces by gas-source molecular beam epitaxy (GSMBE). These surfaces are dimerised and have a domain structure created by the orthogonal alignment of dimers on terraces separated in height by a04. Comparison between the RA and RHEED measurements reveals the origin of dynamic changes in the RA response to be the periodic changes in domain coverages on singular surfaces caused by growth under a monolayer-by-monolayer mode. It also demonstrates that RA is a more direct measure of domain coverage variations on the Si(001) surface compared with RHEED, which may suffer from effects of ordering and multiple scattering. The RA technique is used to investigate domain coverage variations as a function of temperature and following growth interruption. It is shown that there is no significant change in the domain coverage at 600°C during growth interruption, consistent with Monte Carlo simulation. This is despite the occurrence of migration of adatoms/islands as indicated by the recovery of specular beam intensity during simultaneous RHEED measurements. The temperature dependence of the dynamic change in RA response is interpreted as a growth mode change at high temperatures and change in the electronic configuration of the dimers due to chemisorbed hydrogen at low temperatures. The changes in the RA response during deposition of SiGe are also investigated as a function of Ge concentration at 600°C growth temperature.

Dynamical RHEED from MBE Growing Surfaces

Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

Dynamical Calculations for RHEED from MBE Growing Surfaces. I. Growth on a Low-Index Surface

Dynamic Calculations for Rheed from Mbe Growing Surfaces .3. Heteroepitaxial Growth and Interface Formation

Dynamic Calculations for Rheed from Mbe Growing Surfaces .2. Growth Interruption and Surface Recovery

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

THEORY OF RHEED INTENSITY OSCILLATIONS IN MBE

A Treatment of RHEED from a Rough Surface of a Crystal by an Optical Potential Method

An Isolating Algorithm For Automated Surface-Structure Determination Using Rheed

A General Matrix Representation of the Dynamical Theory of Electron Diffraction II. Application to RHEED from Relaxed and Reconstructed Surfaces

Dynamical RHEED Calculations from the Surface of a Semi-Infinite Crystal

The Research on Growth of GaAs under the Monitoring of RHEED

Experimental Studies of Surface Resonance Scattering Processes in Rheed

Study on Temperature Calibration and Surface Phase Transition of Gaas Crystal Substrate in Mbe Growth by Rheed Real-Time Monitoring

Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction

The small terrace size approximation in the theory of RHEED oscillations

Geometric Analysis of Surface Resonance Conditions in Reflection High Energy Electron Diffraction

In-situ Monitoring of Si and SiGe Growth on Si(001) Surfaces During Gas-Source Molecular Beam Epitaxy Using Reflectance Anisotropy

A Multislice Approach To The Rheed And Rem Calculation

Monitoring growth with X-ray diffraction

Reflection High-Energy Electron Diffraction oscillations during epitaxial growth of artificially layered films of (BaCuOx)m /(CaCuO2)n