High heat‐resistant (250°C) epoxy resin composites with excellent dielectric properties

Chunbiao Wang,Yu Feng,Changhai Zhang,Tiandong Zhang,Qingguo Chi,Qingguo Chen,Qingquan Lei
DOI: https://doi.org/10.1002/app.52963
IF: 3
2022-08-09
Journal of Applied Polymer Science
Abstract:An all‐organic high heat‐resistant epoxy resin packing material for insulated gate bipolar transistor (IGBT) encapsulation was prepared by modifying epoxy with cyanate (CE) and EP‐POSS. Compared with epoxy, which not only has low dielectric constant, but also can endure 250°C of operating temperature. A mechanism that forming of oxazolidone and triazine rings restricts movement of carriers and degrading of cross‐linked networks was proposed for the improvement of dielectric and thermal performances. Insulated gate bipolar transistor (IGBT) is the core of electric energy conversion and circuit control, which is widely used in the field of electric vehicles. Higher service temperature, higher power density, and higher operating voltage are the tendency for IGBT in which packing materials have to possess more stable temperature resistance and better insulating properties. In this work, cyanate ester (CE) and polyhedral oligomeric silsesquioxanes (POSS) are introduced into epoxy with various filling ratio to improve the dielectric and thermal properties. The curing process of every system is determined by non‐isothermal differential scanning calorimetry (DSC). N and Si element distribution mappings indicate that there are good compatibility between POSS, CE, and epoxy. The dielectric test shows that the dielectric constant decreases from 4.34 to 2.84 at 1 MHz and from 4.76 to 2.93 at 1 kHz when the filling ratio is 60 wt%. Meanwhile, the DC breakdown strength increases from 172.7 to 286.4 kV/mm. Furthermore, the glass transition temperature (Tg) increases from 180 to 263°C and the yield of residual carbon increases from 6.2% to 23.7%. A new packing material, which can endure 250°C of operating temperature and has excellent dielectric properties has been synthesized.
polymer science
What problem does this paper attempt to address?