Synthesis and piezoelectric properties of freestanding ferroelectric films based on barium strontium titanate

Mikhail S. Afanasiev,Dmitry A. Kiselev,Alexey A. Sivov,Galina V. Chucheva

DOI: https://doi.org/10.3897/j.moem.9.4.115181

2023-12-12

Modern Electronic Materials

Abstract:In this work, the membrane structures based on lead-free ferroelectric barium strontium titanate with composition Ba 0.8 Sr 0.2 TO 3 (BSTO) were fabricated by a magnetron sputtering method. The formation of a single-phase Ba 0.8 Sr 0.2 TO 3 with thickness of 300 nm sintered on Si substrate is confirmed by XRD analysis. It is shown that films without a silicon substrate exhibit ferroelectric and piezoelectric properties. The piezoelectric and ferroelectric behaviors of BSTO thin film without a silicon substrate were confirmed through a piezoelectric force microscopy and Kelvin probe force microscopy and measurements of the effective piezoelectric coefficients ( d 33 and d 15 ). Images of the residual potential of polarized areas have been obtained on the membranes, which are stable over time despite the absence of a lower electrode. Additionally, a local of ferroelectric hysteresis loop has been observed. A combination of the structural and piezoelectric measurements reveals that it possible to create freestanding ferroelectric films based on Ba 0.8 Sr 0.2 TO 3 system, establishing it as a promising candidate for high-performance electromechanical applications.

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