Monatomic reactions with single vacancy monolayer h-BN: DFT studies

Nicholas Mondinos,Mohammednoor Altarawneh,Amun Amri,Willey Yun Hsien Liew,Gerrard Eddy Jai Poinern,Zhong-Tao Jiang

DOI: https://doi.org/10.1039/d3ra05108k

IF: 4.036

2023-01-01

RSC Advances

Abstract:Single atom chemisorption of hexagonal boron nitride (h-BN) result with a range of physicochemical properties for various strategic applications.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Xibiao Ren,Jichen Dong,Peng Yang,Jidong Li,Guangyuan Lu,Tianru Wu,Haomin Wang,Wanlin Guo,Ze Zhang,Feng Ding,Chuanhong Jin

DOI: https://doi.org/10.1103/physrevmaterials.3.014004

IF: 3.98

2019-01-01

Physical Review Materials

Abstract:Atomically thin hexagonal boron nitride (h-BN) exhibits a wide band gap, as well as excellent thermal and chemical stability, and thus has been used in ultraviolet light emission and as building blocks for two-dimensional (2D) heterostructures. Large-area h-BN films for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study on the GB structures in CVD-grown polycrystalline h-BN monolayer films with a transmission electron microscope. Interestingly, most of these GBs are revealed to be formed via overlapping between neighboring grains, which are distinct from the covalently bonded GBs as commonly observed in other 2D materials. Further density functional theory calculations show that hydrogen plays an essential role in overlapping GB formation. This work provides an in-depth understanding of the microstructures and formation mechanisms of GBs in CVD-grown h-BN films, which should be informative in guiding the precisely controlled synthesis of large-area single-crystalline h-BN and other 2D materials.
Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Lijie Ci,Li Song,Chuanhong Jin,Deep Jariwala,Dangxin Wu,Yongjie Li,Anchal Srivastava,Z. F. Wang,Kevin Storr,Luis Balicas,Feng Liu,Pulickel M. Ajayan

DOI: https://doi.org/10.1038/nmat2711

IF: 41.2

2010-01-01

Nature Materials

Abstract:Two-dimensional materials, such as graphene and monolayer hexagonal BN (h-BN), are attractive for demonstrating fundamental physics in materials and potential applications in next-generation electronics. Atomic sheets containing hybridized bonds involving elements B, N and C over wide compositional ranges could result in new materials with properties complementary to those of graphene and h-BN, enabling a rich variety of electronic structures, properties and applications. Here we report the synthesis and characterization of large-area atomic layers of h-BNC material, consisting of hybridized, randomly distributed domains of h-BN and C phases with compositions ranging from pure BN to pure graphene. Our studies reveal that their structural features and bandgap are distinct from those of graphene, doped graphene and h-BN. This new form of hybrid h-BNC material enables the development of bandgap-engineered applications in electronics and optics and properties that are distinct from those of graphene and h-BN.
Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy

Do-Hyun Kim,Hag-Soo Kim,Min Woo Song,Seunghyun Lee,Sang Yun Lee

DOI: https://doi.org/10.1186/s40580-017-0107-0

2017-05-26

Nano Convergence

Abstract:Hexagonal boron nitride (h-BN) is an electrical insulator with a large band gap of 5 eV and a good thermal conductor of which melting point reaches about 3000 °C. Due to these properties, much attention was given to the thermal stability rather than the electrical properties of h-BN experimentally and theoretically. In this study, we report calculations that the electronic structure of monolayer h-BN can be influenced by the presence of a vacancy defect which leads to a geometric deformation in the hexagonal lattice structure. The vacancy was varied from mono- to tri-vacancy in a supercell, and different defective structures under the same vacancy density were considered in the case of an odd number of vacancies. Consequently, all cases of vacancy defects resulted in a geometric distortion in monolayer h-BN, and new energy states were created between valence and conduction band with the Fermi level shift. Notably, B atoms around vacancies attracted one another while repulsion happened between N atoms around vacancies, irrespective of vacancy density. The calculation of formation energy revealed that multi-vacancy including more B-vacancies has much lower formation energy than vacancies with more N-vacancies. This work suggests that multi-vacancy created in monolayer h-BN will have more B-vacancies and that the presence of multi-vacancy can make monolayer h-BN electrically conductive by the new energy states and the Fermi level shift.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Low temperature activation of inert hexagonal boron nitride for metal deposition and single atom catalysis

Yu Lei,Srimanta Pakhira,Kazunori Fujisawa,He Liu,Cynthia Guerrero-Bermea,Tianyi Zhang,Archi Dasgupta,Luis M. Martinez,Srinivasa Rao Singamaneni,Ke Wang,Jeff Shallenberger,Ana Laura Elías,Rodolfo Cruz-Silva,Morinobu Endo,Jose L. Mendoza-Cortes,Mauricio Terrones

DOI: https://doi.org/10.1016/j.mattod.2021.09.017

IF: 24.2

2021-12-01

Materials Today

Abstract:Hexagonal boron nitride (hBN) has long been considered chemically inert due to its wide bandgap and robust covalent bonds. Its inertness hinders hBN from functionalization for energy conversion applications. A question arising is whether it is possible to make hBN chemically reactive. Here, we report cryomilling in liquid N2, as an effective strategy to activate the chemical reactivity of hBN by engineering different vacancies to produce defective-BN (d-BN). The local reactivity of the vacancies is probed by photoluminescence (PL) emissions and electron spin resonance spectroscopy (ESR). Density functional theory calculations reveal that the formation of different vacancies with/without oxygen cause the creation of mid-gap states that are responsible for the PL emissions in the visible region. These vacancies also generate localized free radicals which are both theoretically and experimentally confirmed by spin density calculations and ESR. Due to the vacancy induced free radicals and Fermi level shifts, d-BN can be controllably functionalized with single metal atoms by the spontaneous reduction of metal cations; mono-metallic or bi-metallic clusters can also be effectively reduced. As a proof of concept, the surface-bound metal nanostructures, especially substrate confined single metal atoms, exhibit improved hydrogen evolution catalytic performance, and can be further used for sensing, and quantum information.

materials science, multidisciplinary
Formation of a monolayer h -BN nanomesh on Rh (111) studied using in-situ STM

GuoCai Dong,Yi Zhang,Joost W. M. Frenken

DOI: https://doi.org/10.1007/s11433-017-9169-7

2018-01-01

Abstract:As a member of the 2D family of materials, h -BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h -BN can be synthesized on Rh (111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy (STM), we directly observed the formation of h in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h -BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h -BN overlayer grown on the Rh surface.
Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures

MOHAMED ACHEHBOUNE,Kazem Zhour,Jarek Dabrowski,Dominique Vignaud,Max Franck,M. Lukosius,Jean François Colomer,Luc Henrard

DOI: https://doi.org/10.1039/d4cp03300k

IF: 3.3

2024-11-02

Physical Chemistry Chemical Physics

Abstract:Graphene and hexagonal boron nitride (hBN) are two-dimensional (2D) materials with a similar atomic structure but drastically different although complementary electronic properties. The large-scale synthesis of h-BN/graphene heterostructures with high crystallographic quality is required to fully benefit of the graphene electronic properties. In this study, we examine numer-ically the interaction of graphene precursors on hBN and of hBN precursors on graphene to gain deep insight of the CVD and MBE growth mechanism of graphene/hBN heterostructures. Densi-ty functional theory (DFT) calculations reveal the adsorption and diffusion behaviors for B, N, and C atoms on these surfaces. In particular, the adsorption energy is found to be similar to the diffusion barriers, except for the nearly free diffusion of B atoms on both graphene and hBN. We have also investigated the transition from individual atoms to graphene or h-BN seeds by considering the stability of linear chains as well as branched and ring seeds. Furthermore, for larger clusters, the triangular h-BN domains are found to be equally thermodynamically stable on graphene regardless of their orientation. These findings provide preliminary hints for the ability of graphene to grow on hBN layers and hBN layer on graphene.

chemistry, physical,physics, atomic, molecular & chemical
Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Junzhu Li,Abdus Samad,Yue Yuan,Qingxiao Wang,Mohamed Nejib Hedhili,Mario Lanza,Udo Schwingenschlögl,Iwnetim Abate,Deji Akinwande,Zheng Liu,Bo Tian,Xixiang Zhang

DOI: https://doi.org/10.1038/s41467-024-52944-9

2024-10-04

Abstract:Hexagonal boron nitride (hBN), as one of the few two-dimensional insulators, holds strategic importance for advancing post-silicon electronic devices and circuits. Achieving wafer-scale, high-quality monolayer hBN is essential for its integration into the semiconductor industry. However, the physical mechanisms behind the chemical vapor deposition (CVD) synthesis of hBN are not yet well understood. Investigating morphology engineering is critical for developing scalable synthetic techniques for the large-scale production of high-quality hBN. In this study, we explored the underlying mechanisms of the CVD growth process of hBN and found that the involvement of a small amount of oxygen effectively modulates the shape of the single-crystal hBN islands. By tuning the oxygen content in the CVD system, we synthesized well-aligned hexagonal hBN islands and achieved a continuous, high-quality single-crystal monolayer hBN film through the merging of these hexagonal islands on conventional single-crystal metal-foil substrates. Density functional theory was used to study the edges of hBN monolayers grown in an oxygen-assisted environment, providing insights into the formation mechanism. This study opens new pathways for controlling the island shape of 2D materials and establishes a foundation for the industrial-scale production of high-quality, large-area, single-crystal hBN.
The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Ruiqi Zhao,Feifei Li,Zhirong Liu,Zhongfan Liuc,Feng Ding

DOI: https://doi.org/10.1039/c5cp04833h

2015-01-01

Abstract:Edge structure and stability are crucial in determining both the morphology and the growth behaviours of hexagonal boron nitride (h-BN) domains in chemical vapour deposition (CVD) growth under near thermal equilibrium conditions. In this study, various edges of h-BN on three typical transition metal surfaces used for h-BN's CVD growth, Cu(111), Ni(111) and Rh(111), are explored with density functional theory calculations. Different from that in vacuum, our study shows that the formation of non-hexagonal rings, such as pentagon, heptagon or their pairs, is energetically not preferred and both zigzag (ZZ) edges are more stable than the armchair (AC) edge on all the explored catalyst surfaces under typical conditions of h-BN's CVD growth, which explains the broad experimental observation of triangular h-BN domains. More importantly, our results indicate that, instead of the pristine ZZ edge terminated with nitrogen atoms (ZZN), the triangular BN domains observed in experiments are likely to be enclosed with ZZ Klein edges having dangling atoms, ZZB + N or ZZN + B. By applying the theory of Wulff construction, we predicted that the equilibrium shape of a BN domain could be a hexagon enclosed with nitrogen-rich AC edges, triangles enclosed with two different types of ZZ Klein edges or a hexagon enclosed with boron-rich AC edges if the growth is in a N-rich, neutral or B-rich environment, respectively. This study presents how the edges and equilibrium shapes of h-BN domains can be controlled during the CVD synthesis and provides guidelines for further exploring the growth behaviours and improving the quality of CVD-prepared h-BN films.
An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Min Long,Pierre A. Pantaleón,Zhen Zhan,Francisco Guinea,Jose Ángel Silva-Guillén,Shengjun Yuan

DOI: https://doi.org/10.1038/s41524-022-00763-1

IF: 12.256

2022-01-01

npj Computational Materials

Abstract:Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases. In this work, we study heterostructures of TBG and hexagonal boron nitride (hBN) using an atomistic tight-binding model together with semi-classical molecular dynamics to consider relaxation effects. The hBN substrate has significant effects on the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudo-magnetic fields that break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we develop a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics is a powerful tool to study the electronic properties of moiré heterostructures, and to explain experimental results in which the effect of the substrate plays an important role.
Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Victoria Chen,Yong Cheol Shin,Evgeny Mikheev,Joel Martis,Ze Zhang,Sukti Chatterjee,Arun Majumdar,David Goldhaber-Gordon,Eric Pop

DOI: https://doi.org/10.48550/arXiv.2011.14286

2020-11-29

Materials Science

Abstract:Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single- and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 $\unicode{x212B}$ barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work.
Effects of Mono-Vacancies and Co-Vacancies of Nitrogen and Boron on the Energetics and Electronic Properties of Heterobilayer h-BN/graphene

Gladys Casiano Jiménez,Juan David Morinson-Negrete,Franklin Peniche Blanquicett,César Ortega-López,Miguel J. Espitia-Rico

DOI: https://doi.org/10.3390/ma15186369

IF: 3.4

2022-09-14

Materials

Abstract:A study is carried out which investigates the effects of the mono-vacancies of boron (VB) and nitrogen (VN) and the co-vacancies of nitrogen (N), and boron (B) on the energetics and the structural, electronic, and magnetic properties of an h-BN/graphene heterobilayer using first-principles calculations within the framework of the density functional theory (DFT). The heterobilayer is modelled using the periodic slab scheme. In the present case, a 4 × 4-(h-BN) monolayer is coupled to a 4 × 4-graphene monolayer, with a mismatch of 1.40%. In this coupling, the surface of interest is the 4 × 4-(h-BN) monolayer; the 4 × 4-graphene only represents the substrate that supports the 4 × 4-(h-BN) monolayer. From the calculations of the energy of formation of the 4 × 4-(h-BN)/4 × 4-graphene heterobilayer, with and without defects, it is established that, in both cases, the heterobilayers are energetically stable, from which it is inferred that these heterobilayers can be grown in the experiment. The formation of a mono-vacancy of boron (1 VB), a mono-vacancy of nitrogen (1 VN), and co-vacancies of boron and nitrogen (VBN) induce, on the structural level: (a) for 1 VB, a contraction n of the B-N bond lengths of ~2.46% and a slight change in the interfacial distance D (~0.096%) with respect to the heterobilayer free of defects (FD) are observed; (b) for 1 VN, a slight contraction of the B-N of bond lengths of ~0.67% and an approach between the h-BN monolayer and the graphene of ~3.83% with respect to the FD heterobilayer are observed; (c) for VBN, it can be seen that the N-N and B-B bond lengths (in the 1 VB and 1 VN regions, respectively) undergo an increase of ~2.00% and a decrease of ~3.83%, respectively. The calculations of the Löwdin charge for the FD heterobilayer and for those with defects (1 VB, 1 VN, and VBN) show that the inclusion of this type of defect induces significant changes in the Löwdin charge redistribution of the neighboring atoms of VB and VN, causing chemically active regions that could favor the interaction of the heterobilayer with external atoms and/or molecules. On the basis of an analysis of the densities of states and the band structures, it is established that the heterobilayer with 1 VB and VBN take on a half-metallic and magnetic behavior. Due to all of these properties, the FD heterobilayer and those with 1 VB, 1 VN, and VBN are candidates for possible adsorbent materials and possible materials that could be used for different spintronic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions

Halimah Harfah,Yusuf Wicaksono,Gagus K. Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabe

2024-04-03

Abstract:We investigate the impact of monoatomic vacancies in 2D materials on the performance of magnetic tunnel junction (MTJ) devices using first-principles calculations within Density Functional Theory (DFT). Specifically, we analyze the influence on hexagonal boron nitride (hBN) with various layer configurations, uncovering distinct transmission probability patterns. Transmission calculations were conducted using the Landauer-Büttiker formula employing the Non-Equilibrium Green's Function (NEGF) method. In the Ni/hBN(V$_B$)-hBN/Ni system, a significant reduction in transmission probability was observed compared to non-vacancy configurations. However, when two hBN vacancies were considered, creating the Ni/hBN(V$_B$)-hBN(V$_B$)/Ni MTJ system, a new transmission channel mediated by vacancy localized states emerged. The introduction of a monoatomic boron vacancy in the middle hBN layer of the Ni/3hBN/Ni system revealed nuanced effects on the transmission probability, highlighting alterations in the spin minority and majority channels. Additionally, we explore the monoatomic vacancy in the graphene layer in the Ni/hBN-Gr-hBN/Ni MTJ, uncovering a unique transmission channel influenced by the proximity effect. Our findings suggest that the creation of monoatomic vacancies on the insulator barrier of 2D materials induces distinctive characteristics shaped by the interaction between the surface state of the electrode and the localized state of the monoatomic vacancy layer in the MTJ system.

Materials Science,Mesoscale and Nanoscale Physics
Hydrogen and Water Adsorptions on Monolayer Hexagonal Boron Nitride (h-BN): The First-Principles Calculations

Zakiah Priska,Sri Hidayati,Sholihun Sholihun,Wardah Amalia,Pekik Nurwantoro

DOI: https://doi.org/10.4028/www.scientific.net/KEM.884.387

2021-05-06

Key Engineering Materials

Abstract:Publication date: 4 May 2021 Source: Key Engineering Materials Vol. 884 Author(s): Zakiah Priska, Sri Hidayati, Sholihun Sholihun, Wardah Amalia, Pekik Nurwantoro Hydrogen and water adsorptions on the monolayer hexagonal boron nitride (h-BN) have been studied using the density functional theory. In this study, two configurations of monovacancy were modeled, i.e., monovacancy at the nitrogen site (VN) and monovacancy at the boron site (VB), by removing N and B atoms from the h-BN sheet, respectively. A supercell consisting of 32 atoms was used to analyze the adsorption of hydrogen and water (H2O) by calculating formation and adsorption energies. From the calculated negative adsorption energies, we found that the involved reactions are exothermic, meaning that hydrogen and H2O are easily adsorbed on the h-BN sheet. In addition, the hydrogen system at the VB site was the most stable, as shown by the lowest formation energy of 2.78 eV.
Synthesis Landscapes for Ammonia Borane Chemical Vapor Deposition of h -BN and BNNT: Unraveling Reactions and Intermediates from First-Principles

Ting Cheng,Ksenia V. Bets,Boris I. Yakobson

DOI: https://doi.org/10.1021/jacs.4c01354

IF: 15

2024-03-23

Journal of the American Chemical Society

Abstract:Planar hexagonal boron nitride (h-BN) and tubular BN nanotube (BNNT), known for their superior mechanical and thermal properties, as well as wide electronic band gap, hold great potential for nanoelectronic and optoelectronic devices. Chemical vapor deposition has demonstrated the best way to scalable synthesis of high-quality BN nanomaterials. Yet, the atomistic understanding of reactions from precursors to product-material remains elusive, posing challenges for experimental design. Here,...

chemistry, multidisciplinary
Atomic Insights into the Unidirectional Alignment and Orientation-Pinning Behavior of h-BN Nucleation on Ir(111)

jinliang pan,Kui Hu,Luye Sun,Yangfan Wu,Shuangbao Ma,Mengxi Liu,Yanning Zhang,Tongwei Wu,Chao Ma,Yi Zheng,Mengxi Liu

DOI: https://doi.org/10.21203/rs.3.rs-3057234/v1

2023-01-01

Abstract:Abstract The epitaxial growth of wafer-scale single-crystalline two-dimensional materials requires precise control over the crystallographic orientation and morphology of clusters formed during the initial stages of nucleation. However, there is limited knowledge about the critical nucleus and its growth mechanism for h-BN on high-symmetry surfaces of transition metals. In this study, we provide atomic insights into h-BN nucleation on Ir(111) using scanning tunneling microscopy (STM) and noncontact atomic force microscopy (nc-AFM), corraborated by density functional theory (DFT) calculations. The atomic-resolved structural characterization reveals that the smallest h-BN cluster, exhibiting a non-1:1 stoichiometric ratio of boron and nitrogen atoms, maintains a triangular shape with zigzag-type edges. Through AFM force spectroscopy, individual B and N atoms within the cluster, as well as the N-termination edge, are clearly identified. The achievement of elemental sensitivity at the atomic scale is attributed to the chemical reactivity of the metallic tip. The local registry of h-BN nuclei that align with the prevailing crystalline orientation is consistently identified as NtopBhcp. Despite DFT calculations indicating the energetically favorable NtopBfcc configuration for larger h-BN clusters, the alignment of the nuclei with respect to the underlying substrate remains unchanged throughout the growth of the clusters. This orientation pinning behavior, which impeding the rotational alignment of nuclei following the formation of initial clusters during the early stages of nucleation, presents a valuable avenue for exploring the large-scale growth of binary and ternary materials.
Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Ricardo Javier Peña Román,Fábio J R Costa Costa,Alberto Zobelli,Christine Elias,Pierre Valvin,Guillaume Cassabois,Bernard Gil,Alex Summerfield,Tin S Cheng,Christopher J Mellor,Peter H Beton,Sergei V Novikov,Luiz F Zagonel

DOI: https://doi.org/10.48550/arXiv.2107.07950

2021-07-16

Mesoscale and Nanoscale Physics

Abstract:Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is $(6.8\pm0.2)$ eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of $(0.7\pm0.2)$ eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level.
Creation of single vacancies in hBN with electron irradiation

Thuy An Bui,Gregor T. Leuthner,Jacob Madsen,Mohammad R.A. Monazam,Alexandru I. Chirita,Andreas Postl,Clemens Mangler,Jani Kotakoski,Toma Susi

DOI: https://doi.org/10.1002/smll.202301926

2023-05-16

Abstract:Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.

Mesoscale and Nanoscale Physics
Atomic Resolution Imaging Of Grain Boundary Defects In Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

Ashley L Gibb,Nasim Alem,Jian-Hao Chen,Kristopher J Erickson,Jim Ciston,Abhay Gautam,Martin Linck,Alex Zettl

DOI: https://doi.org/10.1021/ja400637n

IF: 15

2013-01-01

Journal of the American Chemical Society

Abstract:Grain boundaries are observed and characterized in chemical vapor deposition-grown sheets of hexagonal boron nitride (h-BN) via ultra-high-resolution transmission electron microscopy at elevated temperature. Five- and seven-fold defects are readily observed along the grain boundary. Dynamics of strained regions and grain boundary defects are resolved. The defect structures and the resulting out-of-plane warping are consistent with recent theoretical model predictions for grain boundaries in h-BN.
Thermodynamics of carbon point defects in hexagonal boron nitride

Marek Maciaszek,Lukas Razinkovas,Audrius Alkauskas,and Audrius Alkauskas

DOI: https://doi.org/10.1103/PhysRevMaterials.6.014005

IF: 3.98

2022-01-22

Physical Review Materials

Abstract:We present a first-principles computational study of the thermodynamics of carbon defects in hexagonal boron nitride (hBN). The defects considered are carbon monomers, dimers, trimers, and larger carbon clusters, as well as complexes of carbon with vacancies, antisites, and substitutional oxygen. Our calculations show that monomers (CB, CN) , dimers, trimers, and CNON pairs are the most prevalent species under most growth conditions. Compared with these defects, larger carbon clusters, as well as complexes of carbon with vacancies and antisites, occur at much smaller concentrations. Our results are discussed in view of the relevance of carbon defects in single-photon emission in hBN. https://doi.org/10.1103/PhysRevMaterials.6.014005 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Published by the American Physical Society

materials science, multidisciplinary
Structure, stability and defects of single layer h-BN in comparison to graphene

GJ Slotman,A Fasolino

DOI: https://doi.org/10.1088/0953-8984/25/4/045009

2013-02-21

Abstract:We study by molecular dynamics the structural properties of single layer h-BN in comparison to graphene. We show that the Tersoff bond order potential developed for BN by Albe, Moller and Heinig gives a thermally stable hexagonal single layer with a bending constant kappa= 0.54 eV at T = 0. We find that the non-monotonic behaviour of the lattice parameter, the expansion of the interatomic distance and the growth of the bending rigidity with temperature are qualitatively similar to those of graphene. Conversely, the energetics of point defects is extremely different: instead of Stone Wales defects, the two lowest energy defects in h-BN involve either a broken bond or an out of plane displacement of a N atom to form a tetrahedron with three B atoms in the plane. We provide the formation energies and an estimate of the energy barriers.

Materials Science

Monatomic reactions with single vacancy monolayer h-BN: DFT studies

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy

Low temperature activation of inert hexagonal boron nitride for metal deposition and single atom catalysis

Formation of a monolayer h -BN nanomesh on Rh (111) studied using in-situ STM

Atomistic insights into the nucleation and growth of hexagonal boron nitride and graphene heterostructures

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Effects of Mono-Vacancies and Co-Vacancies of Nitrogen and Boron on the Energetics and Electronic Properties of Heterobilayer h-BN/graphene

Impact of Monoatomic Vacancies in 2D Materials on the Performance of Magnetic Tunnel Junction Devices: Insights from Configurations and Interface Interactions

Hydrogen and Water Adsorptions on Monolayer Hexagonal Boron Nitride (h-BN): The First-Principles Calculations

Synthesis Landscapes for Ammonia Borane Chemical Vapor Deposition of h -BN and BNNT: Unraveling Reactions and Intermediates from First-Principles

Atomic Insights into the Unidirectional Alignment and Orientation-Pinning Behavior of h-BN Nucleation on Ir(111)

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Creation of single vacancies in hBN with electron irradiation

Atomic Resolution Imaging Of Grain Boundary Defects In Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride

Thermodynamics of carbon point defects in hexagonal boron nitride

Structure, stability and defects of single layer h-BN in comparison to graphene