Non-monotonic effect of growth pressure on the responsivity of AlGaN ultraviolet Schottky detectors: publisher’s note

Yujie Huang,Jing Yang,Zongshun Liu,Feng Liang,Wei Jia,Degang Zhao

DOI: https://doi.org/10.1364/ome.510544

2023-10-31

Optical Materials Express

Abstract:This publisher’s note contains corrections to Opt. Mater. Express 13 ( 11 ), 3148 ( 2023 ) 10.1364/OME.503410 .

materials science, multidisciplinary,optics

What problem does this paper attempt to address?

Non-monotonic effect of growth pressure on the responsivity of AlGaN ultraviolet Schottky detectors

Yujie Huang,Jing Yang,Zongshun Liu,Feng Liang,Jia Wei,Degang Zhao,Zong Liu,Feng liang,wei jia,De Zhao

DOI: https://doi.org/10.1364/ome.503410

2023-10-12

Optical Materials Express

Abstract:Yujie Huang, Jing Yang, Zongshun Liu, Feng Liang, Jia Wei, Degang Zhao Three AlGaN-based Schottky detector samples grown with varying pressure conditions are prepared and their responsivity is investigated. It ... [Opt. Mater. Express 13, 3148-3155 (2023)]

materials science, multidisciplinary,optics
Experimental Demonstration of a Graphene-Based Hybrid Plasmonic Modulator: Publisher’s Note

Ran Hao,Jianyao Jiao,Xiliang Peng,Zheng Zhang,Rakhatbek Dagarbek,Yijun Zou,Er‐Ping Li

DOI: https://doi.org/10.1364/ol.389201

2020-01-01

Abstract:This publisher’s note contains corrections to Opt. Lett. 44 , 2586 ( 2019 ) OPLEDP 0146-9592 10.1364/OL.44.002586 .
Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Fang‐Ze Li,Gen-Wen Hsieh,S. H. Dalal,Mary Newton,J.E. Stott,Pritesh Hiralal,Arokia Nathan,P. A. Warburton,Hüsnü Emrah Ünalan,Paul Beecher,Andrew J. Flewitt,Ian Robinson,G.A.J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1109/ted.2008.2010442

2009-01-01

Abstract:In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.
Correction: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (vol 11, pg 1704, 2023)

Teng Zhan,Jianwen Sun,Tao Feng,Yulong Zhang,Binru Zhou,Banghong Zhang,Junxi Wang,Pasqualina M. Sarro,Guoqi Zhang,Zewen Liu,Xiaoyan Yi,Jinmin Li

DOI: https://doi.org/10.1039/d3tc90039h

IF: 6.4

2023-01-01

Journal of Materials Chemistry C

Abstract:Correction for 'Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction' by Teng Zhan et al., J. Mater. Chem. C, 2023, 11, 1704-1713, https://doi.org/10.1039/D2TC04491A.
Correction: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Teng Zhan,Jianwen Sun,Tao Feng,Yulong Zhang,Binru Zhou,Banghong Zhang,Junxi Wang,Pasqualina M. Sarro,Guoqi Zhang,Zewen Liu,Xiaoyan Yi,Jinmin Li

DOI: https://doi.org/10.1039/d3tc90039h

IF: 6.4

2023-03-01

Journal of Materials Chemistry C

Abstract:Correction for 'Electrical characteristics and photodetection mechanism of TiO 2 /AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction' by Teng Zhan et al. , J. Mater. Chem. C , 2023, 11 , 1704–1713, https://doi.org/10.1039/D2TC04491A.

materials science, multidisciplinary,physics, applied
Correction: High-performance p-i-n perovskite photodetectors and image sensors with long-term operational stability enabled by a corrosion-resistant titanium nitride back electrode (vol 15, pg 7803, 2023)

Tian Sun,Tong Chen,Jiahao Chen,Qiang Lou,Zihao Liang,Guijun Li,Xiaoyun Lin,Guoshen Yang,Hang Zhou

DOI: https://doi.org/10.1039/d4nr90024c

IF: 6.7

2024-01-01

Nanoscale

Abstract:Correction for 'High-performance p-i-n perovskite photodetectors and image sensors with long-term operational stability enabled by a corrosion-resistant titanium nitride back electrode' by Tian Sun et al., Nanoscale, 2023, 15, 7803-7811, https://doi.org/10.1039/D3NR00410D.
Correction: High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa

Linfei Yang,Jianjun Jiang,Lidong Dai,Haiying Hu,Meiling Hong,Xinyu Zhang,Heping Li,Pengfei Liu

DOI: https://doi.org/10.1039/d1tc90046c

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:Correction for ‘High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa’ by Linfei Yang <italic>et al.</italic>, <italic>J. Mater. Chem. C</italic>, 2021, <bold>9</bold>, 2912–2918, DOI: 10.1039/d0tc06004f.
Plasmon-enhanced Luminescence in Novel Complex Conjugated Polymer Nanoparticles: Publisher’s Note

Jiawei Lang,Pengqi Lu,Gang Bi,Chunfeng Cai,Huizhen Wu

DOI: https://doi.org/10.1364/ol.43.000231

2018-01-01

Abstract:This publisher's note corrects errors in the affiliations in Opt. Lett.42, 3789 (2017).OPLEDP0146-959210.1364/OL.42.003789.
Publisher Correction: Chalcogenide Glass-on-graphene Photonics

Hongtao Lin,Yi Song,Yizhong Huang,Derek Kita,Skylar Deckoff-Jones,Kaiqi Wang,Lan Li,Junying Li,Hanyu Zheng,Zhengqian Luo,Haozhe Wang,Spencer Novak,Anupama Yadav,Chung-Che Huang,Ren-Jye Shiue,Dirk Englund,Tian Gu,Daniel Hewak,Kathleen Richardson,Jing Kong,Juejun Hu

DOI: https://doi.org/10.1038/s41566-017-0066-3

IF: 35

2017-01-01

Nature Photonics

Abstract:In the version of this Article originally published online, the following statement for the equally contributing authors was missing: “Hongtao Lin, Yi Song, Yizhong Huang and Derek Kita contributed equally to this work.” This has now been corrected in all versions of the Article.
Mid-infrared Photoluminescence Revealing Internal Quantum Efficiency Enhancement of Type-I and Type-Ii InAs Core/shell Nanowires: Publisher’s Note

Xiren Chen,H. Alradhi,Zh. M. Jin,Liangqian Zhu,A. M. Sanchez,Shufang Ma,Qiandong Zhuang,Jun Shao

DOI: https://doi.org/10.1364/ol.478124

IF: 3.6

2022-01-01

Optics Letters

Abstract:This publisher’s note contains corrections to Opt. Lett. 47, 5208 (2022)10.1364/OL.473154.
Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Congwei Tan,Mengshi Yu,Junchuan Tang,Xiaoyin Gao,Yuling Yin,Yichi Zhang,Jingyue Wang,Xinyu Gao,Congcong Zhang,Xuehan Zhou,Liming Zheng,Hongtao Liu,Kaili Jiang,Feng Ding,Hailin Peng

DOI: https://doi.org/10.1038/s41586-023-06093-6

IF: 64.8

2023-05-04

Nature

Abstract:Nature - Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high-k gate oxide

multidisciplinary sciences
Publisher’s Note:“Effect of pressure on the structural properties of Li [Li 0. Ni 0. 35 Mn 0. 55] O 2”[AIP Advances 5

Yufeng Zhang,Li Wang,Juping Yang,Xiangming He

2011-01-01

Abstract:Citation: AIP Advances 5, 049902 (2015); doi: 10.1063/1.4919035 View online: http://dx.doi.org /10.1063/1.4919035 View Table of Contents: http://scitation.aip.org/content/aip/journal/adva/5 /4?ver=pdfcov Published by the AIP Publishing … Articles you may be interested in Publisher's Note: “Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices” [AIP Advances 5, 067140 (2015)] AIP Advances 5, 079901 (2015); 10.1063/1.4926425 … Effect of pressure on the structural properties of Li[Li0.1Ni0.35Mn0.55]O2 AIP Advances 5, 047106 (2015); 10.1063/1.4917297 … Publisher's Note: “Tailoring a psychophysical discrimination experiment upon assessment of the psychometric function: Predictions and results” [AIP Advances 5, 027121 (2015)] AIP Advances 5, 039901 (2015); 10.1063/1.4914136 … Exchange bias and enhanced coercivity in phase separated La0.45Sr0.55MnO3 and Pr0.55(Ca0.65S0.35) …
Correction: Growth Mechanism of Ceria Nanorods by Precipitation at Room Temperature and Morphology-Dependent Photocatalytic Performance

Zhao Liu,Xiaojing Li,Mohannad Mayyas,Pramod Koshy,Judy N. Hart,Charles C. Sorrell

DOI: https://doi.org/10.1039/c7ce90142a

IF: 3.756

2017-01-01

CrystEngComm

Abstract:Correction for ‘Growth mechanism of ceria nanorods by precipitation at room temperature and morphology-dependent photocatalytic performance’ by Zhao Liu et al., CrystEngComm, 2017, 19, 4766–4776.
Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Rong Jiang,En Xia Zhang,Xiao Shen,Jin Chen,Kai Ni,Pan Wang,Daniel M. Fleetwood,Ronald D. Schrimpf,Stephen W. Kaun,Erin C. H. Kyle,James S. Speck,Sokrates T. Pantelides

DOI: https://doi.org/10.1109/RADECS.2016.8093099

2016-01-01

Abstract:Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.
Correction: Huang et al. High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots. Nanomaterials 2021, 11, 2696

Yu-Ming Huang,Jo-Hsiang Chen,Yu-Hau Liou,Konthoujam James Singh,Wei-Cheng Tsai,Jung Han,Chun-Jung Lin,Tsung-Sheng Kao,Chien-Chung Lin,Shih-Chen Chen,Hao-Chung Kuo

DOI: https://doi.org/10.3390/nano12020252

IF: 5.3

2022-01-14

Nanomaterials

Abstract:The authors wish to make following corrections in this paper [...]

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Publisher Correction: Nucleation-controlled Growth of Superior Lead-Free Perovskite Cs3Bi2I9 Single-Crystals for High-Performance X-ray Detection

Yunxia Zhang,Yucheng Liu,Zhuo Xu,Haochen Ye,Zhou Yang,Jiaxue You,Ming Liu,Yihui He,Mercouri G. Kanatzidis,Shengzhong (Frank) Liu

DOI: https://doi.org/10.1038/s41467-020-16809-1

IF: 16.6

2020-01-01

Nature Communications

Abstract:An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Highly efficient fluorescent and hybrid white organic light-emitting diodes based on a bimolecular excited system: publisher's note

Erdong Zhang,Cong Chen,Wencheng Zhao,Duxu Yan,Jihua Tang,Jintao Wang,Ping Chen,Ren Sheng

DOI: https://doi.org/10.1364/ol.524948

IF: 3.6

2024-04-05

Optics Letters

Abstract:Erdong Zhang, Cong Chen, Wencheng Zhao, Duxu Yan, Jihua Tang, Jintao Wang, Ping Chen, Ren Sheng This publisher's note contains a correction to Opt. Lett.48, 5771 (2023)10.1364/OL.506371. [Opt. Lett. 49, 1928-1928 (2024)]

optics
Influence of Defects in N−-Gan Layer on the Responsivity of Schottky Barrier Ultraviolet Photodetectors

D. G. Zhao,D. S. Jiang,J. J. Zhu,Z. S. Liu,S. M. Zhang,J. W. Liang,Hui Yang,X. Li,X. Y. Li,H. M. Gong

DOI: https://doi.org/10.1063/1.2450658

IF: 4

2007-01-01

Applied Physics Letters

Abstract:The influence of defects on the responsivity of GaN Schottky barrier ultraviolet photodetectors with n−-GaN∕n+-GaN layer structures is investigated. It is found that employing undoped GaN instead of Si-doped GaN as the n−-GaN layer brings about a higher responsivity due to a lower Ga vacancy concentration. On the other hand, the dislocations may increase the recombination of electron-hole pairs and enhance the surface recombination in the photodetectors. Employing undoped GaN and reducing the dislocation density in the n−-GaN layer are necessary to improve the responsivity of Schottky barrier photodetectors.
Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Liu Zongshun,Zhao Degang,Zhu Jianjun,Zhang Shuming,Duan Lihong,Wang Hai,Shi Yongsheng,Liu Wenbao,Zhang Shuang,Jiang Desheng,Yang Hui

DOI: https://doi.org/10.3969/j.issn.1674-4926.2007.04.023

2007-01-01

Chinese Journal of Semiconductors

Abstract:Schottky barrier GaN ultraviolet detectors are fabricated with a very low reverse saturation current density of 5.5e-14A/cm2 and very large Schottky barrier height of 1.18eV.The spectral responsivity of the detector at 0V and reverse bias was measured.There are no significant changes in the responsivity at reverse bias voltage.The peak responsivity of the detector at 0V is 0.214A/W at a wavelength of 3582nm.The spatial photoresponse was measured by 359nm light beam scanning across the photosensitive area of the detector at 0V and -3V.The changes in the photoresponse are no more than 0.6% in the central portion of the photosensitive area at biases of 0V and -3V.The Schottky barrier height decreases with near-band-edge ultraviolet illumination,especially near the transparent Schottky contact and near the Schottky contact pad.The open circuit voltage of the detector with 368nm light illumination is less than that with both 368 and 810nm light illumination, but the photocurrent of the detector with 368nm light illumination is nearly equal to that with both 368 and 810nm light illumination at 0V. The variation in occupied trap concentration at the GaN surface is estimated to be 8.4e10 cm-2 by the difference of the open circuit voltage of the detector between cases of illumination with 368nm light and 368nm+810nm light.
Retraction Note To: Self-assembled Monolayer Organic Field-Effect Transistors

Jan Hendrik Schön,Hong Meng,Zhenan Bao

DOI: https://doi.org/10.1038/nature01464

IF: 64.8

2003-01-01

Nature

Abstract:Nature 413, 713–716 (2001); correction Nature 414, 470 (2001). This manuscript was, in part, the subject of an independent investigation conducted at the behest of Bell Laboratories, Lucent Technologies. The independent committee reviewed concerns related to the validity of data associated with thedevice measurements described in the paper.

Non-monotonic effect of growth pressure on the responsivity of AlGaN ultraviolet Schottky detectors: publisher’s note

Non-monotonic effect of growth pressure on the responsivity of AlGaN ultraviolet Schottky detectors

Experimental Demonstration of a Graphene-Based Hybrid Plasmonic Modulator: Publisher’s Note

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Correction: Electrical characteristics and photodetection mechanism of TiO<sub>2</sub>/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (vol 11, pg 1704, 2023)

Correction: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction

Correction: High-performance p-i-n perovskite photodetectors and image sensors with long-term operational stability enabled by a corrosion-resistant titanium nitride back electrode (vol 15, pg 7803, 2023)

Correction: High-pressure structural phase transition and metallization in Ga2S3 under non-hydrostatic and hydrostatic conditions up to 36.4 GPa

Plasmon-enhanced Luminescence in Novel Complex Conjugated Polymer Nanoparticles: Publisher’s Note

Publisher Correction: Chalcogenide Glass-on-graphene Photonics

Mid-infrared Photoluminescence Revealing Internal Quantum Efficiency Enhancement of Type-I and Type-Ii InAs Core/shell Nanowires: Publisher’s Note

Publisher Correction: 2D fin field-effect transistors integrated with epitaxial high- k gate oxide

Publisher’s Note:“Effect of pressure on the structural properties of Li [Li 0. Ni 0. 35 Mn 0. 55] O 2”[AIP Advances 5

Correction: Growth Mechanism of Ceria Nanorods by Precipitation at Room Temperature and Morphology-Dependent Photocatalytic Performance

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Correction: Huang et al. High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots. Nanomaterials 2021, 11, 2696

Publisher Correction: Nucleation-controlled Growth of Superior Lead-Free Perovskite Cs3Bi2I9 Single-Crystals for High-Performance X-ray Detection

Highly efficient fluorescent and hybrid white organic light-emitting diodes based on a bimolecular excited system: publisher's note

Influence of Defects in N−-Gan Layer on the Responsivity of Schottky Barrier Ultraviolet Photodetectors

Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Retraction Note To: Self-assembled Monolayer Organic Field-Effect Transistors