Abstract:Czochralski‐grown gallium‐doped silicon wafers are now a mainstream substrate for commercial passivated emitter and rear cell (PERC) devices and allow retention of established processes while offering enhanced cell stability. We have assessed the carrier lifetime potential of such Czochralski‐grown wafers in dependence of resistivity, finding effective lifetimes well into the millisecond region without any gettering or hydrogenation processing, thus demonstrating one advantage over boron‐doped silicon. Second, the stability of gallium‐doped PERC cells are monitored under illumination (>3000 h in some cases) and anomalous behavior is detected. While some cells are stable, others exhibit a degradation then recovery, reminiscent of light and elevated temperature‐induced degradation (LeTID) observed in other silicon materials. Surprisingly, cells from one ingot exhibit LeTID‐like behavior when annealed at 300 °C but near stability when not annealed, but, for another ingot, the opposite is observed. Moreover, a stabilization process typically used to mitigate boron–oxygen degradation does not influence any cells that are studied. Secondary‐ion mass spectrometry of the PERC cells reveals significant concentrations of unintentionally incorporated boron in some cases. Nevertheless, even in the absence of mitigating light‐induced degradation, Ga‐doped silicon is still more stable than unstabilized B‐doped silicon under illumination. Gallium‐doped silicon wafers are now a mainstream substrate for commercial passivated emitter and rear cell (PERC) devices. Although more stable than boron‐doped silicon, Ga PERC cells exhibit anomalous light‐induced degradation and lifetime instability. The onset of degradation appears sensitive to cell processing and/or the Ga doped base silicon material. Correlations with gallium and unintentional boron doping are investigated.

Determination of Gallium Concentration in Silicon from Low‐temperature Photoluminescence Analysis

Determination of Mg acceptor concentration in GaN through photoluminescence

Optoelectronic characterization of Si and Be doped GaAs thin films

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Dopant concentration effects on Si$_{1-x}$Ge$_{x}$ crystals for emerging light-source technologies: A molecular dynamics study

How Silicon and Boron Dopants Govern the Cryogenic Scintillation Properties of N-type GaAs

Spectral Change of E− Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation

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Visualizing localized, radiative defects in GaAs solar cells

Dopant concentration effects on Si Ge crystals for emerging light-source technologies: a molecular dynamics study

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

Reassessing iron–gallium recombination activity in silicon

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

Secondary Ion Mass Spectroscopy and Photoluminescence Investigations on the Gan Epilayer Grown on Si Substrate

Probing alloy formation using different excitonic species: The particular case of InGaN

Aluminum-Doped Crystalline Silicon and Its Photovoltaic Application

Demonstration of c-Si solar cells with gallium oxide surface passivation and laser-doped gallium p+ regions

Ag‐Dependent Behaviour Threshold and Meta‐Stability in Wide‐Gap (Ag,Cu)(In,Ga)Se2 Solar Cells