Theoretical investigations on electron-impact single-ionization cross section of Sn 11+

Fangjun Zhang,Xiao-Bin Ding,Cheng Gao,Denghong Zhang,Jiaolong Zeng,Chen-Zhong Dong
DOI: https://doi.org/10.1088/1402-4896/ad2756
2024-02-09
Physica Scripta
Abstract:The total cross-section of electron-impact single ionization for the ground configuration 3d 10 4s 2 4p 6 4d 3 and excited configuration 3d 10 4s 2 4p 6 4d 2 4f of Sn 11+ is determined from the ionization threshold to 1000 eV. The contributions of direct ionization, excitation auto-ionization, and resonant excitation double auto-ionization to the total electron-impact single ionization cross-section are systematically demonstrated. The cross-section of direct ionization and excited auto-ionization are determined using the level-to-level method, while the cross-section of partially resonant excited double auto-ionization are determined through the configuration-averaged method. To obtain convergence, excitation channels with the maximum principal quantum number up to n = 25 are considered. A comparison of the present results with the experimental data [Borovik et al. J. Phys. B 46, 175201 (2013)] reveal considerably improved agreement when including the resonant-excitation double auto-ionization in the calculation.
physics, multidisciplinary
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