Abstract:Abstract We deposited high-quality molybdenum disulfide (MoS 2 ) monolayer and multilayer crystals on SiO 2 /Si substrates, by means of a chemical vapor deposition (CVD) process at atmospheric pressure. Notably, NaCl salt was used as component of the precursors to assist the growth of MoS 2 crystals, which were intended for use as the active channel layer in the fabrication of field-effect transistors (FETs). The resulting MoS 2 crystals from this CVD process were analyzed by optical, scanning electron, and atomic force microscopies, and by Raman and photoluminescence spectroscopies. The optical images and the micrographs obtained by SEM revealed the formation of dispersed MoS 2 crystals with a triangular shape all over the SiO 2 surface. The thickness of the MoS 2 crystals, analyzed by atomic force microscopy, showed minimum values of around 0.7 nm, confirming the formation of monolayers. Additionally, multilayers with larger thickness were also identified. The Raman and photoluminescence spectra of the MoS 2 crystals corroborated the formation of single and multiple layers. The fabrication of the FET back-SiO 2 -gate configuration was made by depositing patterned source and drain Ti contacts on the dispersed MoS 2 crystals to achieve the Ti/MoS 2 /SiO 2 /Si layer stacks. MoS 2 -based FETs with one and three layers were assembled and their electrical response analyzed by I–V output and transfer curves showing the typical characteristics of an n -type semiconductor channel operating in depletion mode. The electrical performance parameters of the devices, such as mobility and threshold voltage, were also determined from this analysis. Finally, to enhance their electrical response, the MoS 2 -based devices were thermally annealed at 200 °C for 30 min in Ar atmosphere. The increase in the mobility of the device was 176% compared to the device before the treatment.

Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS2 Transistors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Influence of Interface Roughness on Electrical Properties of Pmosfets with a Si/Si1- Xgex Channel

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Electrical Performance Of Multilayer Mos2 Transistors On High-Kappa Al2o3 Coated Si Substrates

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Influence of Water Vapor on the Electronic Property of MoS2 Field Effect Transistors

Remote Phonon And Impurity Screening Effect Of Substrate And Gate Dielectric On Electron Dynamics In Single Layer Mos2

MoS 2 -on-AlN Enables High-Performance MoS 2 Field-Effect Transistors through Strain Engineering

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects

Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Observation of Different Transport Behaviors in a Two-Dimensional MoTe2 Field-Effect Transistor with Engineered Gate Stack

Electrical Contacts in Monolayer MoSi2N4 Transistors