Abstract:III–V semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated circuit. Despite these applications for conventional bulk structures, their fundamental physical properties in the nanoscale limit are still in scarcity, which is of great importance for the development of nanoelectronics. In this work, we demonstrate that the III–V semiconductor MX (M = Al, Ga, In; X = P, As, Sb) in its two-dimensional (2D) limit could exhibit double layer honeycomb (DLHC) configuration and distorted tetrahedral coordination, according to our first-principles calculations with HSE06 hybrid functional. It is found that surface reconstruction endows 2D III–V DLHCs with pronouncedly different electronic and magnetic properties from their bulk counterparts due to strong interlayer coupling. Mexican-hat-shape bands emerge at the top valence bands of pristine AlP, GaP, InP, AlAs, and InAs DLHCs, inducing the density of states showing a sharp van Hove singularity near the Fermi level. As a result, these DLHCs exhibit itinerant magnetism upon moderate hole doping, while the rest GaAs, AlSb, GaSb, and InSb DLHCs become magnetic under tensile strain with hole doping. With an exchange splitting of the localized pz states at the top valence bands, the hole-doped III–V DLHCs become half-metals with 100% spin-polarization. Remarkably, the InSb DLHC shows inverted band structure near the Fermi level, bringing about nontrivial topological band structures in stacked InSb DLHC due to the strong spin-orbital coupling. These III–V DLHCs expand the members of 2D material family and their exotic magnetic and topological properties may offer great potential for applications in the novel electronic and spintronic devices.

Giant Carrier Mobility in a Room-Temperature Ferromagnetic VSi 2 N 4 Monolayer

Structural Phase Transition of Multilayer VSe2.

Inducing itinerant ferromagnetism by manipulating van Hove singularity in epitaxial monolayer 1T-VSe2

Mechanically strong and room-temperature magnetocaloric monolayer VSi2N4 semiconductor

Intrinsic multiferroicity and magnetoelectric coupling in VSI2 monolayer

Thickness-dependent Magnetotransport Properties in 1T VSe2 Single Crystals Prepared by Chemical Vapor Deposition

Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi2P4

Intrinsic 2D-XY Ferromagnetism in a Van Der Waals Monolayer

Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer

Realizing Ferromagnetism in a Field‐Effect Transistor Based on VSe 2 Thin Flakes

Theoretical Investigation of the Ferromagnetism on VS(2 )monolayers with Exchange Anisotropy

Strong spin-phonon coupling in two-dimensional monolayer VS2 and the origin of its high-temperature magnetism

Ferromagnetic vanadium disulfide VS 2 monolayers with high Curie temperature and high spin polarization

Two-dimensional 1T′ α -VXY (X = S, Se, Te; Y = Cl, Br, I): A multifunctional vanadium chalcohalide family with room-temperature ferromagnetism and sliding ferroelectricity

A combined Quantum Monte Carlo and DFT study of the strain response and magnetic properties of two-dimensional (2D) 1T-VSe$_2$ with charge density wave

Room-Temperature Ordered Spin Structures in Cluster-Assembled Single V@Si 12 Sheets

Cr2XTe4 (X = Si, Ge) Monolayers: a New Type of Two-Dimensional High-T C Ising Ferromagnetic Semiconductors with a Large Magnetic Anisotropy

Intrinsic Ferromagnetic Semiconductivity Realized in a New MoS2 Monolayer

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Exploration of the Two-Dimensional Ising Magnetic Materials in the Triangular Prismatic Crystal Field

Carrier-driven magnetic and topological phase transitions in two-dimensional III–V semiconductors