Mn$_3$O$_4$(001) film growth on Ag(001) - a systematic study using NEXAFS, STM, and LEED

Konrad Gillmeister,Michael Huth,Roman Shantyr,Martin Trautmann,Klaus Meinel,Angelika Chassé,Karl-Michael Schindler,Henning Neddermeyer,Wolf Widdra
DOI: https://doi.org/10.48550/arXiv.1506.07294
2015-06-24
Atomic Physics
Abstract:The film growth of Mn$_3$O$_4$(001) films on Ag(001) up to film thicknesses of almost seven unit cells of Mn$_3$O$_4$ has been monitored using a complementary combination of near-edge X-ray absorption fine structure spectroscopy (NEXAFS), scanning tunneling microscopy (STM), and low-energy electron diffraction (LEED). The oxide films have been prepared by molecular beam epitaxy. Using NEXAFS, the identity of the Mn oxide has clearly been determined as Mn$_3$O$_4$. For the initial stages of growth, oxide islands with p(2$\times$1) and p(2$\times$2) structures are formed, which are embedded into the substrate. For Mn$_3$O$_4$ coverages up to 1.5 unit cells a p(2$\times$1) structure of the films is visible in STM and LEED. Further increase of the thickness leads to a phase transition of the oxide films resulting in an additional c(2$\times$2) structure with a 45$^\circ$ rotated atomic pattern. The emerging film structures are discussed on the basis of a sublayer model of the Mn$_3$O$_4$ spinel unit cell. While the polarity of the island edges determines the structure of initial islands, the surface energy of thicker layers is remarkably reduced by a film restructuring.
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