Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector

Yang Chen,Ke Jiang,Hang Zang,Jianwei Ben,Shanli Zhang,Zhiming Shi,Yuping Jia,Wei Lü,Dabing Li,Xiaojuan Sun

DOI: https://doi.org/10.1016/j.carbon.2020.12.055

IF: 10.9

2021-04-01

Carbon

Abstract:<p><em>In situ</em> growth of graphene on dielectric substrates is crucial for its application in various electronic and optoelectronic devices, which may also avoid the additional extrinsic defects and residual pollutions originated from the essential transfer process of graphene grown by chemical vapor deposition on metal foils. However, the <em>in situ</em> growth of high-quality and wafer-scale graphene on dielectric substrates is now still challengeable. Herein, we demonstrated the <em>in situ</em> growth of graphene from solid polymer carbon source on various substrates under the assistance of Nickel/SiO₂ capping layer. The wafer-scale graphene with ideal uniformity and continuity was achieved on 2 inch sapphire substrates. The growth dynamic process of the <em>in situ</em> graphene was proposed, which mainly consists of polymer carbonization, carbon dissolution, segregation and precipitation. The <em>in situ</em> graphene was further grown on un-doped GaN to serve as the carrier transport channel of ultraviolet photodetectors, exhibiting a responsivity of 4 A/W. The <em>in situ</em> growth of high-quality and wafer-scale graphene on dielectric substrates reported by present work would promote commercial application of the graphene-based electronic and optoelectronic devices.</p>

materials science, multidisciplinary,chemistry, physical