Abstract:2D materials and their heterostructures exhibit considerable potential in the development of avalanche photodetectors (APDs) with high gain, response, and signal-to-noise ratio. These materials hold promise in addressing inherent technical challenges associated with APDs, such as low light absorption coefficient, elevated noise current, and substantial power consumption due to high bias resulting in only moderate current gain. In this work, a macro-assembled graphene nanofilm (nMAG)/epitaxial silicon (epi-Si) vertical heterostructure photodetector with a responsivity of 0.38 A W-1 and a response time of 1.4 mu s is reported. The photodetectors use high-quality nMAG as the absorption layer and a lightly-doped epi-Si layer as the multiplication region under the avalanche mode to provide a high responsivity (2.51 mA W-1) and detectivity (2.67 x 109 Jones) at 1550 nm, which can achieve high-resolution imaging. In addition, the APD displays a weak noise level and an avalanche gain of M = 1123. It can work with relatively low avalanche turn-on voltages and achieve self-quenching by switching from illumination to dark during avalanche multiplication, with a real-time data transfer rate of 38 Mbps in near-infrared light communication data links. The proposed structure enables the fabrication of high-performance APDs in the infrared range using complementary-metal-oxide-semiconductor (CMOS)-compatible processes. Silicon-based avalanche photodetectors (APDs) have emerged as crucial devices in imaging and optical communication systems. For challenges such as silicon bandgap, high operating voltage, and large noise, an innovative approach to fabricate highly sensitive multilayer graphene/epitaxial silicon near-infrared (NIR) APDs is introduced. This study also offers the opportunity to develop CMOS-compatible room temperature NIR image sensors and signal receivers. image

Direct Growth of Graphene Nanowalls on Silicon Using Plasma-Enhanced Atomic Layer Deposition for High-Performance Si-Based Infrared Photodetectors

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

In situ synthesis of monolayer graphene on silicon for near-infrared photodetectors

Direct growth of graphene on hyper-doped silicon to enhance carrier transport for infrared photodetection

Enhanced Performance of a Graphene/gaas Self-Driven Near-Infrared Photodetector with Upconversion Nanoparticles.

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector.

A Silicon Sub-Bandgap Near-Infrared Photodetector with High Detectivity Based on Textured Si/Au Nanoparticle Schottky Junctions Covered with Graphene Film

Graphene/Si Heterostructure with an Organic Interfacial Layer for a Self-Powered Photodetector with a High ON/OFF Ratio

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Graphene/PtSe/Pyramid Si van Der Waals Schottky Junction for Room-Temperature Broadband Infrared Light Detection

Schottky Barrier Height Modification of Graphene/Ge by Al2O3 Interfacial Layer and Au Nanoparticles for High-Gain Short-Wavelength Infrared Photodetectors

Growth of 12-Inch Uniform Monolayer Graphene Film on Molten Glass and Its Application in PbI2-based Photodetector

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Surface Engineered Hybrid Core–Shell Si‐Nanowires for Efficient and Stable Broadband Photodetectors

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

Resonant nanocavity-enhanced graphene photodetectors on reflecting silicon-on-insulator wafers

High-performance Broadband Photoresponse of Self-Powered Mg2Si/Si Photodetectors

Facile sulfur-assisted synthesis of GaAs nanowires /si heterojunctions for broadband self-powered photodetector

Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC

Fabrication and Characterization of Visible to Near-Infrared Photodetector Based on Multilayer Graphene/Mg2Si/Si Heterojunction