Abstract:The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.

Band Engineering of Large-Twist-Angle Graphene / h − BN Moiré Superlattices with Pressure

High Pressure Induced Secondary and Tertiary Gaps in Relaxed Graphene on Hexagonal Boron Nitride

Moiré-of-Moiré phases formed in twisted graphene/hexagonal boron nitride heterostructures under high pressure

Graphene bandgap opening by constructing superlattices with BN or MoO2 under pressure

Magic Angle and Plasmon Mode Engineering in Twisted Trilayer Graphene with Pressure

Pressure-induced Gap Modulation and Topological Transitions in Twisted Bilayer and Twisted Double Bilayer Graphene

Emerging Flat Bands in Large-Angle Twisted Bi-Layer Graphene under Pressure.

Emergence of moiré superlattice potential in graphene by twisted-hBN layers

Strain-engineering of twist-angle in graphene/hBN superlattice devices

Pressure and Electric Field Dependence of Quasicrystalline Electronic States in 30^∘ Twisted Bilayer Graphene

Tuning of the Moiré Bands in Graphene on Hexagonal Boron Nitride by the Periodic Electrostatic Gating

Tunable Interband Transitions in Twisted H-Bn/graphene Heterostructures

Transport evidence of superlattice Dirac cones in graphene monolayer on twisted boron nitride substrate

Moiré Effects in Graphene-Hbn Heterostructures

Lithographic band structure engineering of graphene

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Heterostrain and Temperature-Tuned Twist Between Graphene/h-Bn Bilayers

Tunable Interband Transitions in Twisted Heterostructures

Band structure engineering using a moiré polar substrate

Thermally Induced Graphene Rotation on Hexagonal Boron Nitride.