Abstract:The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.

Thermally Induced Graphene Rotation on Hexagonal Boron Nitride.

Graphene Helicoid: Distinct Properties Promote Application of Graphene Related Materials in Thermal Management

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Heterostrain and Temperature-Tuned Twist Between Graphene/h-Bn Bilayers

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

Thermally Induced Hex-Graphene Transitions in 2D Carbon Crystals

Structural Determination of a Graphite/Hexagonal Boron Nitride Superlattice Observed in the Experiment.

Revealing the Interlayer Orientations for Bilayer Graphene Grown on Hexagonal Boron Nitride by C-Afm Measurement

The thermal and thermoelectric properties of in-plane C-BN hybrid structures and graphene/h-BN van der Waals heterostructures

Impact of Moiré Superlattice on Atomic Stress and Thermal Transport in Van Der Waals Heterostructures

Moiré Effects in Graphene-Hbn Heterostructures

Strain-engineering of twist-angle in graphene/hBN superlattice devices

Symmetry Breaking In The Double Moire Superlattices Of Relaxed Twisted Bilayer Graphene On Hexagonal Boron Nitride

Emergence of moiré superlattice potential in graphene by twisted-hBN layers

Tunable Interband Transitions in Twisted H-Bn/graphene Heterostructures

Band Engineering of Large-Twist-Angle Graphene / h − BN Moiré Superlattices with Pressure

Effective Lattice Model of Graphene Moiré Superlattices on Hexagonal Boron Nitride

Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner

Precisely Aligned Graphene Grown on Hexagonal Boron Nitride by Catalyst Free Chemical Vapor Deposition.

Misalignment instability in magic-angle twisted bilayer graphene on hexagonal boron nitride