Abstract:The electronics market is highly competitive and driven by consumers desire for the latest and most sophisticated devices at the lowest cost. In the last decade there has been increasing interest in printing electronic materials on lightweight and flexible substrates such as plastics and fabrics. This not only lowers fabrication and capital costs but also facilitates many new applications, such as flexible displays and wearable electronics. The printing of computer memory is also desirable since many of these applications require memory to store and process information. In addition, there is now an international effort to develop new types of computer memory that consume ultra-low levels of power. This is not only to lower energy usage worldwide, which is important for reducing CO2 emissions, but it also enables a longer period between the re-charging of devices such as mobile phones, music players and fitness bands. Memory that is non-volatile is an obvious choice since it doesn't consume power to retain information like conventional SRAM and DRAM. Memristors (or memory resistor) are a new type of memory that are intrinsically non-volatile in nature. Their simple two-terminal architecture, easy method of fabrication and low power consumption means they have received much attention from both the research community and industry. Devices with the lowest fabrication costs are made from organic or hybrid (organic-inorganic) composite materials because of the ability to use low-cost solution processing methods with the advantages of large area deposition under vacuum-free and room temperature ambient conditions. Memristors have excellent device properties, including a large resistance Off/On ratio (up to 5 orders of magnitude), fast switching speeds (less than 15 ns), long endurance (over 1012 cycles), long data storage retention time (~10 years) and high scalability down to nanoscale dimensions. In this article we review progress in the field of printed and flexible memristor devices and discuss their potential across a wide range of applications.

Design and synthesis of low temperature printed metal oxide memristors

Low Voltage Resistive Switching Devices Based on Chemically Produced Silicon Oxide

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe2O3 Memristor

A multi-level memristor based on atomic layer deposition of iron oxide

Resistive switching behavior of solution-processed AlOx and GO based RRAM at low temperature

Fully Printed Memristors Made with MoS2 and Graphene Water-Based Inks

A low-cost memristor based on titanium oxide

Printed Memristors: An Overview of Ink, Materials, Deposition Techniques, and Applications (Adv. Electron. Mater. 10/2024)

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources

All-Printed Flexible Memristor with Metal–Non-Metal-Doped TiO2 Nanoparticle Thin Films

Inkjet printed IGZO memristors with volatile and non-volatile switching

Performance Optimization of Atomic Layer Deposited HfOx Memristor by Annealing with Back-End-of-Line Compatibility

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Emergent solution based IGZO memristor towards neuromorphic applications

Printed and Flexible Organic and Inorganic Memristor Devices for Non-volatile Memory Applications

Performance Optimization of Atomic Layer Deposited HfO x Memristor by Annealing With Back-End-of-Line Compatibility

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and Memristive Storage

Memory traces ruled by surface-biased REDOX reactions

Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching

Bipolar Cu/HfO2/p++ Si Memristors by Sol-Gel Spin Coating Method and Their Application to Environmental Sensing