Abstract:Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics, neuromorphic photonics, and beam steering. All these applications require integrated and voltage-efficient modulator solutions with compact form factors that are seamlessly integrable with silicon photonics platforms and feature near-CMOS material processing synergies. However, existing integrated modulators are challenged to meet these requirements. Conversely, emerging electro-optic materials heterogeneously and monolithically integrated with Si photonics open up a new avenue for device engineering. Indium tin oxide (ITO) is one such compelling material for heterogeneous integration in Si exhibiting formidable electro-optic effect characterized by unity-order index change at telecommunication frequencies. Here we overcome these limitations and demonstrate a monolithically integrated ITO electro-optic modulator based on a Mach Zehnder interferometer featuring a high-performance half-wave voltage and active device length product of VπL = 0.52 V mm. We show that the unity-strong index change enables a 30 μm-short π-phase shifter operating ITO in the index-dominated region away from the epsilon-near-zero point for reduced losses. This device experimentally confirms electrical phase shifting in ITO enabling its use in applications such as compact phase shifters, nonlinear activation functions in photonic neural networks, and phased array applications for LiDAR.

Si-waveguide-based optical power monitoring of a 2 × 2 Mach–Zehnder interferometer based on a InGaAsP/Si hybrid MOS optical phase shifter

Si-waveguide-based optical power monitoring of 2$\times$2 Mach$\unicode{x2013}$Zehnder interferometer based on InGaAsP/Si hybrid MOS optical phase shifter

A Wavelength-Insensitive All-Silicon In-Line Optical Power Monitor for Multimode Silicon Photonics

On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide

High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer

Mach-Zehnder Based Optical Switches in Silicon-On-Insulator

Photothermal Switching Based on Silicon Mach–Zehnder Interferometer Integrated with Light Absorber

Mach-Zehnder based 2×2 electro-optical switches on silicon-on-insulator with low crosstalk

High-performance Silicon PIN Diode Switches in the 2-Μm Wave Band.

Thermally Enhanced Responsivity in an All-Silicon Optical Power Monitor Based on Defect-Mediated Absorption

Modeling and analysis of p-i-n diodes for Si based waveguide devices

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Optical Power Monitoring with Ultrahigh Sensitivity in Silicon Waveguides and Ring Resonators

Mach-Zehnder based 2X2 electro-optical switches on silicon-on-insulator with low crosstalk

0.52 V mm ITO-based Mach-Zehnder modulator in silicon photonics

Integrated High-Performance Two-Stage Ratiometric Wavelength Monitors on Silicon

Optical Performance Of Single-Mode Hybrid Dielectric-Loaded Plasmonic Waveguide-Based Components

Ratiometric Wavelength Monitor Based on Mach-Zehnder Interferometer over a 80 nm Wavelength Range

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Low-Power And High-Speed Thermo-Optic Switch Using Hybrid Silica/Polymer Waveguide Structure: Design, Fabrication And Measurement

2×2 Electrooptical Switch in Silicon-on-insulator Waveguide