Abstract:Two-dimensional (2D) niobium oxydihalide NbOI$_2$ has been recently demonstrated as an excellent in-plane piezoelectric and nonlinear optical materials. Here we show that Janus niobium oxydihalide, NbO$XY$ (X, Y = Cl, Br, I and X$\neq$Y), is a multifunctional anisotropic semiconductor family with exceptional piezoelectric, electronic, photocatalytic and optical properties. NbO$XY$ are stable and mechancially flexible monolayers with band gap around the visible light regime of $\sim 1.9$ eV. The anisotropic carrier mobility of NbO$XY$ lies in the range of $10^3 \sim 10^4$ cm$^2$V$^{-1}$s$^{-1}$, which represents some of the highest among 2D semiconductors of bandgap $\gtrsim 2$ eV. Inversion symmetry breaking in Janus NbO$XY$ generates sizable out-of-plane $d_{31}$ piezoelectric response while still retaining a strong in-plane piezoelectricity. Remarkably, NbO$XY$ exhibits an additional out-of-plane piezoelectric response, $d_{32}$ as large as 0.55 pm/V. G$_0$W$_0$-BSE calculation further reveals the strong linear optical dichroism of NbO$XY$ in the visible-to-ultraviolet regime. The optical absorption peaks with $14\sim18$ \% in the deep UV regime ($5\sim6$ eV), outperforming the vast majority of other 2D materials. The high carrier mobility, strong optical absorption, sizable built-in electric field and band alignment compatible with overall water splitting further suggest the strengths of NbO$XY$ in energy conversion application. We further propose a directional stress sensing device to demonstrate how the out-of-plane piezoelectricity can be harnessed for functional device applications. Our findings unveil NbO$XY$ as an exceptional multifunctional 2D semiconductor for flexible electronics, optoelectronics, UV photonics, piezoelectric and sustainable energy applications.

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The crystal structure of niobium oxide diiodide NbOI2

Reconciling the theoretical and experimental electronic structure of NbO2

Structures of the reduced niobium oxides Nb12O29 and Nb22O54

2D Janus Niobium Oxydihalide NbO$XY$: Multifunctional High-Mobility Piezoelectric Semiconductor for Electronics, Photonics and Sustainable Energy Applications

A new quasi-one-dimensional transition metal chalcogenide semiconductor (Nb$_4$Se$_{15}$I$_2$)I$_2$

Rational Design of a Niobium Tellurite Crystal Nb2Te3O11 Exhibiting Good Overall Infrared NLO Performance by Structural Genetic Engineering

The Metal-Insulator Transition of NbO2: an Embedded Peierls Instability

Introduction of Niobium in the Chemistry of Octahedral Chalcogenide Clusters: Synthesis and Detailed Study of Compounds Based on Condensed and Discrete {Re5NbQ8} (Q = S or Se) Cores

Crystal structure and superconducting properties of hexagonal lithium-niobium oxynitride

Origin and properties of the flat band in NbOCl2 monolayer

2D NbOI 2 : A Chiral Semiconductor with Highly In‐Plane Anisotropic Electrical and Optical Properties

Exploring the Effects of the Photochromic Response and Crystallization on the Local Structure of Noncrystalline Niobium Oxide

First-Principles Study of Localised and Delocalised Electronic States in Crystallographic Shear Phases of Niobium Oxide

Highly anisotropic mechanical and optical properties of 2D NbOX2 (X = Cl, Br, I) revealed by first-principle

Indirect and direct electronic transitions and electron transport properties of van der Waals niobium oxide dichloride

Optical and dielectric properties of a nanostructured NbO2 thin film prepared by thermal oxidation

Niobium-chloride octahedral clusters as building units for larger frameworks

Coherent Vibrational Dynamics of NbO2 Film

Organometallic-like localization of 4d-derived spins in an inorganic conducting niobium suboxide

Synthesis and Structure of Quasi-One-Dimensional Niobium Tetrasulfide NbS4