Longitudinal Piezoelectricity and Polarization‐Insensitive Oxidation in Janus vdWs Nb3SeI7
Jiapeng Wang,Xiaojia Yuan,Yuqiang Fang,Xinfeng Chen,Zhengbo Zhong,Shui Lin,Jiafan Qu,Jierui Fu,Yue Liu,Zhipeng Li,Bo Gao,Gaoyang Gou,Liang Zhen,Chengyan Xu,Jun Cai,Fuqiang Huang,Lu You,Yang Li
DOI: https://doi.org/10.1002/smll.202408628
IF: 13.3
2024-11-05
Small
Abstract:The intrinsic out‐of‐plane piezoelectric response (|d33eff| = 0.76 nm V−1) of Janus Nb3SeI7 is experimentally demonstrated. After proving the termination atom plane‐related properties, the stability of distinct termination planes are found to be independent of the termination plane due to similar defect formation energies for Se and I atoms and the oxidation kinetics are self‐limiting. This self‐limiting and polarization‐insensitive oxidation broadens the applications of out‐of‐plane piezoelectricity and other intriguing physical properties. As a newly discovered Janus van der Waals (vdW) material, semiconducting Nb3SeI7 offers several notable advantages, including spontaneous out‐of‐plane polarization, facile exfoliation to the monolayer limit, and significant out‐of‐plane emission dipole in second harmonic generation. These properties make it a promising candidate for piezoelectric and piezophototronic applications in highly efficient energy conversion. However, Nb3SeI7 is prone to oxidation when exposed to oxygen, which can severely limit the exploration and utilization of these intriguing physical properties. Therefore, understanding the oxidation mechanism of pristine Nb3SeI7 and its correlation with electrical polarization—an area that remains largely unexplored—is highly significant. In this study, the out‐of‐plane piezoelectricity of Nb3SeI7 is experimentally demonstrated, with a piezoelectric coefficient (|d33eff|) of 0.76 nm V−1. Furthermore, by combining near ambient‐pressure X‐ray photoelectron spectroscopy (NAP‐XPS), Time‐of‐Flight secondary ion mass spectrometry (ToF‐SIMS), and Density functional theory (DFT) calculations, it is revealed that the oxidation of Nb3SeI7 is self‐limiting and independent of its electrical polarization, owing to the similar defect formation energies of Se and I atoms. This self‐limiting and polarization‐insensitive oxidation provides valuable insights into the stabilization mechanisms and expands the potential applications of out‐of‐plane piezoelectricity and other intriguing physical properties in Janus vdW Nb3SeI7.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology