Abstract:This work includes a precise study of the mechanism of how in situ atomic layer deposition (ALD)‐stacked Al2O3 and SnO channel thin‐film transistors exhibit exceptionally low S‐value (0.15 V decade−1) and enhanced stability, which are related to the change occurring in the film. Also, using this improved p‐channel, an all‐ALD channel complementary metal–oxide–semiconductor, which has not been reported before, is fabricated. Tin monoxide (SnO) has been studied widely over the past several decades due to its promising theoretical p‐type performance. However, limited fabrication processes due to the low thermal and air stability of SnO have resulted in poor performance in thin‐film transistors (TFTs). Here, it is suggested that in situ atomic layer deposition (ALD) of an Al2O3 capping layer can improve the electrical performance in SnO TFTs. By adopting an in situ stacking process, which protects vulnerable SnO thin films from exposure to air and contamination, SnO exhibits enhanced crystallinity, electrical performance, and improved scaling limitation of channel thickness. Especially, in situ stacked Al2O3 on a 7 nm SnO TFT has an exceptionally low subthreshold swing (0.15 V decade−1), high on/off ratio (6.54 × 105), and reasonable mobility (1.14 cm2 V−1 s−1) while the bare SnO TFT is not activated. Computational thermodynamics such as chemical potential analysis, nucleation Gibbs free‐energy calculations, and various analytical techniques are used to reveal the origin of highly crystallized SnO formations via in situ deposition of Al2O3. Finally, state‐of‐the‐art all‐ALD‐channel complementary metal–oxide–semiconductor inverters using n‐type indium gallium zinc oxide and p‐type SnO TFTs are integrated, which exhibit a maximum voltage gain of 240 V V−1 and a noise margin of 89.3%.

In–Si–O thin-film transistors with atomic layer deposition-grown Al2O3 gate insulator

High-Performance Polycrystalline Sige Thin-Film Transistors Using Al2o3 Gate Insulators

High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al 2 O 3 -Passivated CeO 2 Bilayer Gate Dielectrics

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlOx Gate Insulator with SiO2 Blocking Layer

Microporous SiO2 with Huge Electric-Double-layer Capacitance for Low-Voltage Indium Tin Oxide Thin-Film Transistors

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film

Ultra-thin gate insulator of atomic-layer-deposited AlO x and HfO x for amorphous InGaZnO thin-film transistors

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2 gate insulator

Aluminum Oxide/Fluoride Self-Assembled Monolayer Double Gate Dielectric for Solution-Processed Indium Oxide Thin-Film Transistors

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications