Abstract:Long‐range order and short‐range disorder (disordered order) enable high out‐of‐plane ZT ≈ 1.7 in n‐type PbSnS2 crystals. The promoted crystal symmetry through alloying Se weakens the distortion of the average long‐range order. The induced mass and strain field fluctuations realize short‐range disorder. Furthermore, the single‐leg device with preeminent power generation efficiency ≈7.2% facilitates the multistage utilization of energy. High‐performance thermoelectric materials enable waste heat recovery, providing an effective avenue for sustainable development. The concept of "phonon‐glass electron‐crystal" is considered as an ideal approach to achieve high‐performance thermoelectric materials. However, achieving this perfect state remains a significant challenge due to the coupled transport parameters. In this work, long‐range order and short‐range disorder (disordered order) in n‐type PbSnS2 crystals are successfully realized through alloying Se, which enable the synergistic optimization of electron and phonon transport. The improvement of crystal symmetry weakens the distortion of the average long‐range order, leading to a high carrier mobility and promoted electrical transport performance. Meanwhile, the local structure analyzed by X‐ray absorption fine structure spectra reveals a strengthened short‐range disorder, resulting in the enhanced phonon scattering and thus ultralow lattice thermal conductivity. As a result, the disordered order enables a high ZT ≈ 1.7 in PbSnS2‐Cl‐30%Se crystal at 733 K along the out‐of‐plane direction. Moreover, the single‐leg device fabricated using this crystal produces a power generation efficiency of ≈7.2% at temperature difference of 378 K. This work demonstrates the realistic feasibility of disordered order to fulfill the ideal "phonon‐glass electron‐crystal" thermoelectric material, which opens up new avenues for performance optimization.

Disordered Order Enables High Out‐of‐Plane ZT in PbSnS2 Crystals

Realizing High‐Ranged Out‐of‐Plane ZTs in N‐Type SnSe Crystals through Promoting Continuous Phase Transition

Enhancement of Thermoelectric Performance of Layered SnSe2 by Synergistic Modulation of Carrier Concentration and Suppression of Lattice Thermal Conductivity

Engineering atomic-level crystal lattice and electronic band structure for extraordinarily high average thermoelectric figure of merit in n-type PbSe

Realizing high-ranged thermoelectric performance in PbSnS2 crystals

Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS

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3D charge and 2D phonon transports leading to high out-of-plane <i>ZT</i> in n-type SnSe crystals