Unusual interlayer coupling in layered Cu-based ternary chalcogenides CuMCh 2 (M = Sb, Bi; Ch = S, Se)

Dan-Dong Wang,Xin-Gao Gong,Ji-Hui Yang

DOI: https://doi.org/10.1039/d1nr04045f

IF: 6.7

2021-01-01

Nanoscale

Abstract:Interlayer interactions play important roles in manipulating the electronic properties of layered semiconductors.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

Unusual Interlayer Coupling in Layered Cu-based Ternary Chalcogenides CuMCh2 (M = Sb, Bi; Ch = S, Se)

Dan-Dong Wang,Xin-Gao Gong,Ji-Hui Yang

DOI: https://doi.org/10.1039/d1nr04045f

IF: 6.7

2021-01-01

Nanoscale

Abstract:Interlayer interactions play important roles in manipulating the electronic properties of layered semiconductors. One common mechanism is that the valence band maximum (VBM) and the conduction band minimum (CBM) in one layer couple to the VBM and CBM in another layer, respectively, resulting in the decrease of the band gap from the monolayer to the bilayer. Here we report an unusual interlayer coupling mechanism in layered Cu-based ternary chalcogenides CuMCh2 (M = Sb, Bi; Ch = S, Se) that the CBM in one layer strongly couples to the VBM in the other layer, leading to the band gap increase from the monolayer to the bilayer. Such an unusual interlayer interaction arises from the entangling between the electronic structures and the structures of CuMCh2 in which the cations M and anions Ch are alternatively arranged at the outmost part of each layer. Consequently, the M atom at the bottom of the upper layer is very close to the Ch atom at the top of the bottom layer, so that the orbitals of the M atom which dominate the CBM can strongly couple to the orbitals of the Ch atom which dominate the VBM, as demonstrated by the orbital hopping integrals obtained from the Wannier function analysis. The exceptional case of the unusual interlayer interaction revealed in this work enriches the diversity of the interlayer interactions in layered materials and is expected to exist in similar layered systems in which cations and anions are alternatively arranged at the outmost part of each layer.
Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Chendong Zhang,Chih-Piao Chuu,Xibiao Ren,Ming-Yang Li,Lain-Jong Li,Chuanhong Jin,Mei-Yin Chou,Chih-Kang Shih

DOI: https://doi.org/10.1126/sciadv.1601459

IF: 13.6

2017-01-01

Science Advances

Abstract:By using direct growth, we create a rotationally aligned MoS2/WSe2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry. We quantitatively determine the influence of interlayer coupling on the electronic structure of the hetero-bilayer at different critical points. We show that the direct gap semiconductor concept is retained in the bilayer although the valence and conduction band edges are located at different layers. We further show that the local bandgap is periodically modulated in the X-Y direction with an amplitude of ~0.15 eV, leading to the formation of a two-dimensional electronic superlattice.
Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Chendong Zhang,Chih-Piao Chuu,Xibiao Ren,Ming-Yang Li,Lain-Jong Li,Chuanhong Jin,Mei-Yin Chou,Chih-Kang Shih

DOI: https://doi.org/10.1126/sciadv.1601459

IF: 13.6

2017-01-01

Science Advances

Abstract:A periodic modulation of the local bandgap in the rotationally aligned MoS 2 /WSe 2 bilayer creates a 2D electronic superlattice.
Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Yawei Dai,Xibiao Ren,Junqiu Zhang,Jing Liu,Hongjun Liu,Wingkin Ho,Xianqi Dai,Chuanhong Jin,Maohai Xie

DOI: https://doi.org/10.1021/acsami.9b16189

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Monolayer (ML) transition-metal dichalcogenides (TMDs) continue to attract research attention, and the heterojunctions formed by vertically stacking or laterally stitching two different TMDs, e.g., MoSe2 and WSe2, may have many interesting electronic and optical properties and thus are at the center stage of current research. Experimentally realizing such heterojunctions with desired interface morphologies and electronic properties is of great demand. In this work, we report a diverse interface structure in molecular-beam epitaxial WSe2-MoSe2 heterojunction. The corresponding electronic bands show type-II band alignment for both monolayer ML-ML and ML-bilayer lateral junctions irrespective of the presence or absence of step states. Interestingly, a strong anisotropy in lateral heterojunction formation is observed, where sharp interfaces are obtained only when WSe2 deposition precedes MoSe2. Reversing the deposition order leads to alloying of the two materials without a notable boundary. This is explained by a step segregation process as suggested by the first-principles total energy calculations.
Bethe-Slater-curve-like behavior and interlayer spin-exchange coupling mechanisms in two-dimensional magnetic bilayers

Cong Wang,Xieyu Zhou,Linwei Zhou,Yuhao Pan,Zhong-Yi Lu,Xiangang Wan,Xiaoqun Wang,Wei Ji

DOI: https://doi.org/10.1103/physrevb.102.020402

IF: 3.7

2020-07-06

Physical Review B

Abstract:Layered magnets have recently received tremendous attention, however spin-exchange coupling mechanism across their interlayer regions is yet to be revealed. Here, we report a Bethe-Slater-curve (BSC)-like behavior in nine transition metal dichalcogenide bilayers (MX2, M=V, Cr, Mn; X=S, Se, Te) and established interlayer spin-exchange coupling mechanisms at their van der Waals gaps using first-principle calculations. The BSC-like behavior offers a distance-dependent interlayer antiferromagnetic (AFM) to ferromagnetic (FM) transition. This phenomenon is explained with the spin-exchange coupling mechanisms established using bilayer CrSe2 as a prototype in this work. The Se pz wave functions from two adjacent interfacial Se sublayers overlap at the interlayer region. The spin alignment of the region determines interlayer magnetic coupling. At a shorter interlayer distance, Pauli repulsion at the overlapped region dominates and thus favors antiparallel oriented spins leading to interlayer AFM. For a longer distance, kinetic-energy gain of polarized electrons across the bilayer balances the Pauli repulsion and the bilayer thus prefers an interlayer FM state. In light of this, the AFM-FM transition is a result of competition between Pauli and Coulomb repulsions and kinetic-energy gain. All these results open a route to tune interlayer magnetism and the revealed spin-exchange coupling mechanisms are paramount additions to those previously established ones.

physics, condensed matter, applied,materials science, multidisciplinary
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Hui Fang,Corsin Battaglia,Carlo Carraro,Slavomir Nemsak,Burak Ozdol,Jeong Seuk Kang,Hans A. Bechtel,Sujay B. Desai,Florian Kronast,Ahmet A. Unal,Giuseppina Conti,Catherine Conlon,Gunnar K. Palsson,Michael C. Martin,Andrew M. Minor,Charles S. Fadley,Eli Yablonovitch,Roya Maboudian,Ali Javey

DOI: https://doi.org/10.1073/pnas.1405435111

IF: 11.1

2014-04-14

Proceedings of the National Academy of Sciences

Abstract:Significance A new class of heterostructures consisting of layered transition metal dichalcogenide components can be designed and built by van der Waals (vdW) stacking of individual monolayers into functional multilayer structures. Nonetheless, the optoelectronic properties of this new type of vdW heterostructure are unknown. Here, we investigate artificial semiconductor heterostructures built from single-layer WSe 2 and MoS 2 . We observe spatially direct absorption but spatially indirect emission in this heterostructure, with strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN dielectric layers into the vdW gap. The generic nature of this interlayer coupling is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties through customized composite layers.
Bethe-Slater-Curve Like Behavior in Double Super-Exchange Governed Two-Dimensional Magnetic Bilayers

Xieyu Zhou,Cong Wang,Linwei Zhou,Yuhao Pan,Zhong-Yi Lu,Xiangang Wan,Xiaoqun Wang,Wei Ji

2019-01-01

Abstract:Layered magnets have recently received tremendous attention, however, spin-exchange coupling mechanism across their interlayer regions is yet to be revealed. Here, we report a Bethe-Slater-curve (BSC) like behavior in nine transition metal dichalcogenide bilayers (MX2, M=V, Cr, Mn; X=S, Se, Te) and established interlayer spin-exchange coupling mechanisms at their van der Waals gaps using first-principle calculations. The BSC-like behavior offers a distance-dependent interlayer anti-ferromagnetic (AFM) to ferromagnetic (FM) transition. This phenomenon is explained with the spin-exchange coupling mechanisms established using bilayer CrSe2 as a prototype in this work. The Se pz wavefunctions from two adjacent interfacial Se sublayers overlap at the interlayer region. The spin alignment of the region determines interlayer magnetic coupling. At a shorter interlayer distance, Pauli repulsion at the overlapped region dominates and thus favors anti-parallel oriented spins leading to interlayer AFM. For a longer distance, kinetic energy gain of polarized electrons across the bilayer balances the Pauli repulsion and the bilayer thus prefers an interlayer FM state. In light of this, the AFM-FM transition is a result of competition between Pauli and Coulomb repulsion and kinetic energy gain. All these results open a new route to tune interlayer magnetism and the revealed spin-exchange coupling mechanisms are paramount additions to those previously established ones.
Insight into Interlayer Magnetic Coupling in 1T-Type Transition Metal Dichalcogenides Based on the Stacking of Nonmagnetic Atoms

Wenxuan Zhu,Cheng Song,Yongjian Zhou,Qian Wang,Hua Bai,Feng Pan

DOI: https://doi.org/10.1103/physrevb.103.224404

IF: 3.7

2021-01-01

Physical Review B

Abstract:The interlayer coupling in two-dimensional (2D) magnetic materials is significantly important in determining the properties of 2D materials and applications of related devices. However, the mechanism that determines the interlayer magnetic coupling has only been comprehensively studied in CrI3 and that of transition metal dichalcogenides is still blurred. In this work, through first-principle calculations, we find in 2D magnetic bilayer that the interlayer magnetic coupling is determined by the stacking order of interlayer nonmagnetic atoms, accompanied by the transition between half metal and semiconductor in MnS2. The nonmagnetic atoms bridge the interlayer coupling and the stacking order of nonmagnetic atoms determines the interlayer coupling by altering the interlayer p(z)-orbital bonding. Adjusting the structure of interlayer nomagnetic atoms by biaxial strain can also tune the interlayer coupling. The perspective proposed in our work, from the stacking order of nonmagnetic atoms, to understand the interlayer magnetic coupling is also applicable in other 2D materials.
Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators

Karunya Shirali,William A Shelton,Ilya Vekhter

DOI: https://doi.org/10.1088/2516-1075/acb6cc

2023-01-28

Electronic Structure

Abstract:Driving quantum phase transitions in the 3D topological insulators offers pathways to tuning the topological states and their properties. We use DFT-based calculations to systematically investigate topological phase transitions in Bi 2 Se 3 , Sb 2 Se 3 , Bi 2 Te 3 and Sb 2 Te 3 by varying the c/a ratio of lattice constants. This ensures no net hydrostatic pressure under anisotropic stress and strain and allows a clear identification of the physics leading to the transition. As a function of c/a, all of these materials exhibit structural and electronic stability of the quintuple layers (QLs), and quasi-linear behavior of both the inter-quintuple layer distance and the energy gap near the topological transition. Our results show that the transition is predominantly controlled by the inter-QL physics, namely by competing Coulomb and van der Waals interactions between the outer atomic sheets in neighboring quintuple layers. We discuss the implications of our results for topological tuning by alloying.

English Else
Interlayer coupling in two-dimensional semiconductor materials

Zhiming Shi,Xinjiang Wang,Yuanhui Sun,Yawen Li,Lijun Zhang

DOI: https://doi.org/10.1088/1361-6641/aad6c3

IF: 2.048

2018-08-17

Semiconductor Science and Technology

Abstract:Two-dimensional (2D) graphene-like layered semiconductors provide a new platform for materials research because of their unique mechanical, electronic and optical attributes. Their in-plane covalent bonding and dangling-bond-free surface allow them to assemble various van der Waals heterostructures (vdWHSs) with sharply atomic interfaces that are not limited by lattice matching and material compatibility. Interlayer coupling, as a ubiquitous phenomenon residing among 2D materials (2DMs) systems, controls a thin layer exfoliation process and the assembly of vdWHSs and behaves with a unique degree of freedom for engineering the properties of 2DMs. Interlayer coupling provides an opportunity to observe new physics and provides a novel strategy to modulate the electronic and optoelectronic properties of materials for practical device applications. We herein review recent progress in the exploration of interlayer coupling in 2D semiconducting vdWHSs for potential applications in electronics and optoelectronics.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Interlayer Chemical Modulation of Phase Transitions in Two-Dimensional Metal Chalcogenides

Zhi Zhang,Yi Wang,Zelin Zhao,Weijing Song,Xiaoli Zhou,Zejun Li

DOI: https://doi.org/10.3390/molecules28030959

IF: 4.6

2023-01-19

Molecules

Abstract:Two-dimensional metal chalcogenides (2D-MCs) with complex interactions are usually rich in phase transition behavior, such as superconductivity, charge density wave (CDW), and magnetic transitions, which hold great promise for the exploration of exciting physical properties and functional applications. Interlayer chemical modulation, as a renewed surface modification method, presents congenital advantages to regulate the phase transitions of 2D-MCs due to its confined space, strong guest–host interactions, and local and reversible modulation without destructing the host lattice, whereby new phenomena and functionalities can be produced. Herein, recent achievements in the interlayer chemical modulation of 2D-MCs are reviewed from the aspects of superconducting transition, CDW transition, semiconductor-to-metal transition, magnetic phase transition, and lattice transition. We systematically discuss the roles of charge transfer, spin coupling, and lattice strain on the modulation of phase transitions in the guest–host architectures of 2D-MCs established by electrochemical intercalation, solution-processed intercalation, and solid-state intercalation. New physical phenomena, new insight into the mechanism of phase transitions, and derived functional applications are presented. Finally, a prospectus of the challenges and opportunities of interlayer chemical modulation for future research is pointed out.

chemistry, multidisciplinary,biochemistry & molecular biology
Layered quaternary chalcogenides KMgCuSe2 and KMgCuTe2 with paramagnetic semiconducting behavior

Zhongnan Guo,Zhao Liu,Jun Deng,Jiawei Lin,Zijing Zhang,Xue Han,Fan Sun,Wenxia Yuan

DOI: https://doi.org/10.1016/j.jallcom.2021.160820

IF: 6.2

2021-11-01

Journal of Alloys and Compounds

Abstract:Here we report the synthesis of two new quaternary chalcogenides KMgCuSe2 and KMgCuTe2. Both single-crystal and polycrystalline samples have been obtained using self-flux method and high temperature reaction. These two compounds adopt ThCr2Si2-type structure which is composed of edge-sharing [Mg0.5Cu0.5Se4] and [Mg0.5Cu0.5Te4] tetrahedral layers separated by K+ ions. Single-crystal refinement reveals the random distribution of Mg and Cu with ratio of 1:1 in the centre of tetrahedron motifs. The Mg-Se and Mg-Te bond lengths in KMgCuSe2 and KMgCuTe2 are markedly shorter than those in binary MgSe and MgTe, but are comparable with the Cu-Se and Cu-Te bond lengths in binary Cu chalcogenides. In addition, the tetrahedral configurations in KMgCuSe2 and KMgCuTe2 are highly distorted with strong compression along c axis. These two new Mg chalcogenides are semiconductors with the indirect band gaps estimated from optical absorption spectra as 1.26 and 1.36 eV for KMgCuSe2 and KMgCuTe2. Magnetic susceptibility measurements indicates the paramagnetic behavior of KMgCuSe2 and KMgCuTe2 with small effective magnetic moment u eff (0.35 and 0.31 μB per Mg/Cu).

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

Shuangyan Liu,Dawei He,Congwei Tan,Shaohua Fu,Xiuxiu Han,Mohan Huang,Qing Miao,Xiaoxian Zhang,Yongsheng Wang,Hailin Peng,Hui Zhao

DOI: https://doi.org/10.1002/smll.202106078

IF: 13.3

2021-12-03

Small

Abstract:Atomically thin bismuth oxyselenide (Bi2 O2 Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi2 O2 Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi2 O2 Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi2 O2 Se and representative transition metal dichalcogenides (namely, WS2 /Bi2 O2 Se and MoS2 /Bi2 O2 Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi2 O2 Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

Aaron J. Bradley,Miguel M. Ugeda,Felipe H. da Jornada,Diana Y. Qiu,Wei Ruan,Yi Zhang,Sebastian Wickenburg,Alexander Riss,Jiong Lu,Sung-Kwan Mo,Zahid Hussain,Zhi-Xun Shen,Steven G. Louie,Michael F. Crommie

DOI: https://doi.org/10.1021/acs.nanolett.5b00160

IF: 10.8

2015-01-01

Nano Letters

Abstract:Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron-electron interactions on van der Waals heterostructures, and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.
Experimental overview on pairing mechanisms of BiCh2-based (Ch: S, Se) layered superconductors

Kazuhisa Hoshi,Yoshikazu Mizuguchi

DOI: https://doi.org/10.1088/1361-648X/ac1f4d

2021-09-08

Abstract:BiCh2-based (Ch: S, Se) layered superconductors have attracted extensive attentions because of variation of materials and physical characteristics, which include relatively large spin-orbit coupling originating from bismuth 6porbitals, and the possibility of anisotropic superconducting gap. Some of theoretical studies suggested that anisotropic superconductivity is realized in the BiCh2-based superconductors. In experimental studies, angle-resolved photoemission spectroscopy measurement on the superconducting states of Nd(O,F)BiS2have revealed the anisotropic structure of the superconducting gap, and the absence of isotope effect have been reported, indicating unconventional superconductivity pairing. Furthermore, two-fold-symmetric in-plane anisotropy of magnetoresistance have been observed in the superconducting states of some of Bi(S,Se)2-based systems like La(O,F)Bi(S,Se)2while the crystal structure possesses a tetragonal square plane with four-fold symmetry. Those results indicate nematic superconductivity is emerging in BiCh2-based superconductors. On the basis of the observations suggesting unconventional superconductivity in BiCh2-based systems, clarification of pairing mechanisms of superconductivity in BiCh2-based superconductors have been highly desired. In this article, we review experimental results on the superconducting gap structure, the pairing mechanism, and related phenomena of BiCh2-based superconductors.
Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Shuangyan Liu,Dawei He,Congwei Tan,Shaohua Fu,Xiuxiu Han,Mohan Huang,Qing Miao,Xiaoxian Zhang,Yongsheng Wang,Hailin Peng,Hui Zhao

DOI: https://doi.org/10.1002/smll.202106078

IF: 13.3

2022-01-01

Small

Abstract:Atomically thin bismuth oxyselenide (Bi2O2Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi2O2Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi2O2Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi2O2Se and representative transition metal dichalcogenides (namely, WS2/Bi2O2Se and MoS2/Bi2O2Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi2O2Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.
Interlayer electronic coupling on demand in a 2D magnetic semiconductor

Nathan P. Wilson,Kihong Lee,John Cenker,Kaichen Xie,Avalon H. Dismukes,Evan J. Telford,Jordan Fonseca,Shivesh Sivakumar,Cory Dean,Ting Cao,Xavier Roy,Xiaodong Xu,Xiaoyang Zhu

DOI: https://doi.org/10.1038/s41563-021-01070-8

IF: 41.2

2021-07-26

Nature Materials

Abstract:When monolayers of two-dimensional (2D) materials are stacked into van der Waals structures, interlayer electronic coupling can introduce entirely new properties, as exemplified by recent discoveries of moiré bands that host highly correlated electronic states and quantum dot-like interlayer exciton lattices. Here we show the magnetic control of interlayer electronic coupling, as manifested in tunable excitonic transitions, in an A-type antiferromagnetic 2D semiconductor CrSBr. Excitonic transitions in bilayers and above can be drastically changed when the magnetic order is switched from the layered antiferromagnetic ground state to a field-induced ferromagnetic state, an effect attributed to the spin-allowed interlayer hybridization of electron and hole orbitals in the latter, as revealed by Green's function–Bethe–Salpeter equation (GW-BSE) calculations. Our work uncovers a magnetic approach to engineer electronic and excitonic effects in layered magnetic semiconductors. Interlayer hybridization in 2D van der Waals materials can change their properties. Here, it is shown that the coupling in CrSBr can be changed from switching the magnetic order from antiferromagnetic to ferromagnetic states.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
Interlayer coupling rotatable magnetic easy-axis in MnSe2 mono- and bi-layers

Zhongqin Zhang,Cong Wang,PengJie Guo,Linwei Zhou,Yuhao Pan,Zhixin Hu,Wei Ji

2024-09-04

Abstract:Interlayer coupling plays a critical role in tuning the electronic structures and magnetic ground states of two-dimensional materials, influenced by the number of layers, interlayer distance, and stacking order. However, its effect on the orientation of the magnetic easy axis remains underexplored. In this study, we demonstrate that interlayer coupling can significantly alter the magnetic easy-axis orientation, as shown by the magnetic easy-axis of monolayer 1T-MnSe2 tilting 33° from the z-axis, while aligning with the z-axis in the bilayer. This change results from variations in orbital occupations near the Fermi level, particularly involving nonmetallic Se atoms. Contrary to the traditional focus on magnetic metal atoms, our findings reveal that Se orbitals play a key role in influencing the easy-axis orientation and topological Chern numbers. Furthermore, we show that the occupation of Se p-orbitals, and consequently the magnetic anisotropy, can be modulated by factors such as stacking order, charge doping, and external strain. Our results highlight the pivotal role of interlayer coupling in tuning the magnetic properties of layered materials, with important implications for spintronic applications.

Materials Science,Mesoscale and Nanoscale Physics
Interfacial interaction in monolayer transition metal dichalcogenides (MX2)/metal oxide heterostructures and its effects on electronic and optical properties: The case of MX2/CeO2

Ke Yang,Wei-Qing Huang,Wangyu Hu,Gui-Fang Huang,Shuangchun Wen

DOI: https://doi.org/10.48550/arXiv.1611.02799

2016-11-09

Materials Science

Abstract:Two-dimensional transition metal dichalcogenides (MX2)/metal oxide heterostructures have shown unique physical properties, making them promising materials for various applications ranging from photocatalysis to solar energy conversion. Understanding the interfacial interactions is highly desirable for designing these heterostructures having excellent performance. Here we systematically study the interfacial interaction in monolayer MX2 (M=Mo, W; X=S, Se)/CeO2 heterostructures and its effects on electronic and optical properties by density functional theory. It is found that the interfacial interaction in the MX2/CeO2 depends predominantly on the chalcogen (X) element. Particularly, the band gap variation and important electronic states at conduction band minimum or valence band maximum of the heterostructures are determined by the strength of interfacial interaction. The MX2/CeO2 heterostructures with the same chalcogen (X) element have similar absorption spectra from ultraviolet to near-infrared regions. These results suggest that the chalcogen (X) element is a key factor in tuning the properties of MX2/metal oxide heterostructures.
Evolution of interlayer coupling in twisted molybdenum disulfide bilayers

Kaihui Liu,Liming Zhang,Ting Cao,Chenhao Jin,Diana Qiu,Qin Zhou,Alex Zettl,Peidong Yang,Steve G. Louie,Feng Wang

DOI: https://doi.org/10.1038/ncomms5966

IF: 16.6

2014-01-01

Nature Communications

Abstract:Van der Waals coupling is emerging as a powerful method to engineer physical properties of atomically thin two-dimensional materials. In coupled graphene–graphene and graphene–boron nitride layers, interesting physical phenomena ranging from Fermi velocity renormalization to Hofstadter’s butterfly pattern have been demonstrated. Atomically thin transition metal dichalcogenides, another family of two-dimensional-layered semiconductors, can show distinct coupling phenomena. Here we demonstrate the evolution of interlayer coupling with twist angles in as-grown molybdenum disulfide bilayers. We find that the indirect bandgap size varies appreciably with the stacking configuration: it shows the largest redshift for AA- and AB-stacked bilayers, and a significantly smaller but constant redshift for all other twist angles. Our observations, together with ab initio calculations, reveal that this evolution of interlayer coupling originates from the repulsive steric effects that leads to different interlayer separations between the two molybdenum disulfide layers in different stacking configurations.

Unusual interlayer coupling in layered Cu-based ternary chalcogenides CuMCh 2 (M = Sb, Bi; Ch = S, Se)

Unusual Interlayer Coupling in Layered Cu-based Ternary Chalcogenides CuMCh2 (M = Sb, Bi; Ch = S, Se)

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Bethe-Slater-curve-like behavior and interlayer spin-exchange coupling mechanisms in two-dimensional magnetic bilayers

Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Bethe-Slater-Curve Like Behavior in Double Super-Exchange Governed Two-Dimensional Magnetic Bilayers

Insight into Interlayer Magnetic Coupling in 1T-Type Transition Metal Dichalcogenides Based on the Stacking of Nonmagnetic Atoms

Inter-quintuple layer coupling and topological phase transitions in the chalcogenide topological insulators

Interlayer coupling in two-dimensional semiconductor materials

Interlayer Chemical Modulation of Phase Transitions in Two-Dimensional Metal Chalcogenides

Layered quaternary chalcogenides KMgCuSe2 and KMgCuTe2 with paramagnetic semiconducting behavior

Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

Experimental overview on pairing mechanisms of BiCh2-based (Ch: S, Se) layered superconductors

Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Interlayer electronic coupling on demand in a 2D magnetic semiconductor

Interlayer coupling rotatable magnetic easy-axis in MnSe2 mono- and bi-layers

Interfacial interaction in monolayer transition metal dichalcogenides (MX2)/metal oxide heterostructures and its effects on electronic and optical properties: The case of MX2/CeO2

Evolution of interlayer coupling in twisted molybdenum disulfide bilayers