Low disorder and high valley splitting in silicon

Davide Degli Esposti,Lucas E. A. Stehouwer,Önder Gül,Nodar Samkharadze,Corentin Déprez,Marcel Meyer,Ilja N. Meijer,Larysa Tryputen,Saurabh Karwal,Marc Botifoll,Jordi Arbiol,Sergey V. Amitonov,Lieven M. K. Vandersypen,Amir Sammak,Menno Veldhorst,Giordano Scappucci

DOI: https://doi.org/10.1038/s41534-024-00826-9

IF: 10.758

2024-03-14

npj Quantum Information

Abstract:The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically purified, strained quantum wells with high mobility of 3.14(8) × 10 5 cm 2 V −1 s −1 and low percolation density of 6.9(1) × 10 10 cm −2 . These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) μeV Hz −1/2 and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.

physics, condensed matter, applied, atomic, molecular & chemical,quantum science & technology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to simultaneously achieve low disorder and high valley splitting in silicon - based quantum dots. Specifically, the researchers face the following challenges:

1. **Reduce static disorder**: Static disorder can lead to imprecise control of charging energy and tunnel coupling between quantum dots, thus affecting the operation of qubits. This requires optimizing potential fluctuations in semiconductor materials.

2. **Reduce dynamic disorder**: Dynamic disorder is mainly caused by two - level fluctuators and other noise sources, and these noises can limit the performance of qubits. Therefore, reducing dynamic disorder is the key to improving the performance of qubits.

3. **Maximize valley - splitting energy**: Valley - splitting energy refers to the energy separation between two low - energy conduction - band valleys. High valley - splitting energy can prevent leakage during the calculation process and ensure high - fidelity spin - qubit initialization, read - out, control and transmission.

To meet these requirements simultaneously, the researchers adopted a co - design method to optimize the material stack. They achieved high mobility ($3.14(8)\times10^{5}\, \text{cm}^{2}\text{V}^{-1}\text{s}^{-1}$) and low penetration density ($6.9(1)\times10^{10}\, \text{cm}^{-2}$) by preparing isotope - purified strained quantum wells. These low - disorder quantum wells support quantum dots with low charge noise ($0.9(3)\, \mu\text{eV}\, \text{Hz}^{-1/2}$) and large average valley - splitting energy ($0.24(7)\, \text{meV}$).

By balancing the relationships among disorder, charge noise and valley splitting, these findings provide a benchmark for silicon as the host semiconductor for quantum - dot qubits and are expected to be applied to larger - scale high - performance quantum processors.