Iodide-substitution-induced phase transition of chemical-vapor-deposited MoS 2

Tianfu Zhang,Zimeng Zeng,Xiaoyang Xiao,Zhongzheng Huang,Jie Zhao,Yuxin Zhao,Yuanhao Jin,Jiaping Wang,Shoushan Fan,Qunqing Li
DOI: https://doi.org/10.1039/d1tc05413a
IF: 6.4
2022-01-01
Journal of Materials Chemistry C
Abstract:Molybdenum disulfide (MoS 2 ) based electronic devices, particularly field effect transistors, have outstanding performance.
materials science, multidisciplinary,physics, applied
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