Complementary magnon transistors by comb-shaped gating currents

Peng Chen,Hanchen Wang,Chen Cheng,Caihua Wan,Dalin Zhang,Yuqiang Wang,Yizhan Wang,Wenqing He,Boyuan Chi,Yaowen Liu,Guoqiang Yu,Haiming Yu,Xiufeng Han
DOI: https://doi.org/10.1103/physrevapplied.20.054019
IF: 4.6
2023-11-09
Physical Review Applied
Abstract:Complementary magnon transistors (CMTs) are desired to effectively regulate the transport of coherent spin waves. Here, using comb-shaped gating electrodes with a variable duty ratio ( δ ) and a gating current flowing through them, we were able to decrease or even increase the transmission of spin waves in a wide frequency range complimentarily. The reduction or amplification degree at opposite gating currents depends on δ . We further found that interference between spin waves transmitted through the gated and ungated regions was responsible for the gate tunability at low δ ; at high δ , the inhomogeneous temperature and magnetic fields introduced by the gating currents can nontrivially deflect spin waves and leads to an opposite gate tunability. Realization of the CMT based on a dc gating current may pave the way toward coherent magnon devices and circuits, spin-wave processing, or lensing applications. https://doi.org/10.1103/PhysRevApplied.20.054019 © 2023 American Physical Society
physics, applied
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