Abstract:The tunnel magnetoresistance (TMR) effect observed in magnetic tunnel junctions (MTJs) is commonly used in many spintronic applications because the effect can easily convert from local magnetic states to electric signals in a wide range of device resistances. In this study, we demonstrated TMR ratios of up to 631% at room temperature (RT), which is two or more times larger than those used currently for magnetoresistive random access memory (MRAM) devices, using CoFe/MgO/CoFe(001) epitaxial MTJs. The TMR ratio increased up to 1143% at 10 K, which corresponds to an effective tunneling spin polarization of 0.923. The observed large TMR ratios resulted from the fine-tuning of atomic-scale structures of the MTJs, such as crystallographic orientations and MgO interface oxidation, in which the well-known Delta1 coherent tunneling mechanism for the giant TMR effect is expected to be pronounced. However, behavior that is not covered by the standard coherent tunneling theory was unexpectedly manifested; i.e., (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMR oscillation with a 0.32 nm period in MgO thickness. Particularly, the TMR oscillatory behavior dominates the transport in a wide range of MgO thicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140% at RT, attributable to the appearance of large oscillatory components in resistance area product (RA). Further, we found that the oscillatory behaviors of the TMR ratio and RA survive, even under a +-1 V bias voltage application, indicating the robustness of the oscillation. Our demonstration of the giant RT-TMR ratio will be an essential step for establishing spintronic architectures, such as large-capacity MRAMs and spintronic artificial neural networks. More essentially, the present observations can trigger us to revisit the true TMR mechanism in crystalline MTJs.

Tunneling Optoresistance Effect in Two-Dimensional Modulated Quantum Structures

Quantum-Coherence-Assisted Tunable On- and Off-Resonance Tunneling Through a Quantum-Dot-Molecule Dielectric Film

Tunable Tunneling Magnetoresistance in van der Waals Magnetic Tunnel Junctions with 1 T-CrTe2 Electrodes

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Spin- and Valley-Resolved Tunneling Magnetoresistance in a Ferromagnetic Transition Metal Dichalcogenide Planar Heterojunction Modulated by Polarized Light

Designing High Tunnel Magnetoresistance van der Waals Magnetic Tunnel Junction via Brillouin Zone Filtering

Optically Controlled Valley Filter and Transistor Based on Transition-Metal Dichalcogenide Planar Heterojunctions

Quantum tunnelling with tunable spin geometric phases in van der Waals antiferromagnets

Enhanced Tunneling Magnetoresistance Effect via Ferroelectric Control of Interface Electronic/Magnetic Reconstructions

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Tunneling Modulation of Transistor Lasers: Theory and Experiment

Tunnel magnetoresistance of quantum dots coupled to ferromagnetic leads in the sequential and cotunneling regimes

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Magnetic Modulation of Terahertz Waves via Spin-Polarized Electron Tunneling Based on Magnetic Tunnel Junctions

Double-barrier Magnetic Tunnel Junctions with Enhanced Tunnel Magnetoresistance

Magnetic coherent tunnel junctions with periodic grating barrier

Tunneling Magnetoresistance Modulation in a Magnetic Tunnel Junction with a Ferroelectric Barrier

Investigation on the Quantum Coherent Transport in Magnetic Tunnel Junctions

Coherent Resonant Tunneling Through Double Metallic Quantum Well States.

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions