Poly(ether ketone ketone)/hollow silica filler substrates and application for sixth generation communication

Xing‐yu Wei,Zhi‐wen Lei,Ning Ma,Tim Hsu,Ya‐qiong Huang,Jen‐taut Yeh
DOI: https://doi.org/10.1002/pi.6690
IF: 3.213
2024-08-30
Polymer International
Abstract:Dielectric characteristics of PEKK/SHT films decrease with decreasing SHT densities, and favorable low dielectric characteristics for 6G communication are realized for appropriately prepared PEKK/SHT and PEKK/HGM substrates. The influence of density and shape of hollow silicas (silica hollow tubes (SHT) or hollow glass microspheres (HGM)) on dielectric and heat‐resisting characteristics of poly(ether ketone ketone) (PEKK)/SHT and PEKK/HGM films was systematically investigated. The dielectric characteristics of PEKK/SHT or PEKK/HGM films decrease to a minimum, as their SHT or HGM contents approach 8 or 20 wt%, respectively, and the minimum dielectric constant (εr) and dielectric loss (tan δ) of PEKK/SHT or PEKK/HGM films decrease visibly with decreasing SHT densities. By filling with 0.46 g cm−3 mean density of SHT or HGM fillers, the minimum εr and tan δ of PEKK/SHT films are somewhat smaller than those of PEKK/HGM films. The linear coefficient of thermal expansion (LCTE) values of PEKK/SHT or PEKK/HGM films reduce and their onset degradation temperature values increase gradually with increasing SHT and HGM contents. Low εr/tan δ (2.11/0.0022 and 2.2/0.0027 at 1 MHz), LCTE (35.5 × 10−6 and 31.2 × 10−6 °C−1) and excellent heat‐resisting properties favorable for sixth generation (6G) ultrarapid communication are realized for appropriately prepared PEKK/SHT and PEKK/HGM substrate films. The free‐volume‐hole characteristics of PEKK/HGM or PEKK/SHT films approach a maximum as SHT or HGM contents reach an optimum value of 8 or 20 wt%, respectively. © 2024 Society of Chemical Industry.
polymer science
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