Abstract:Two dimensional hexagonal boron nitride (2D-hBN), an isomorph of graphene with a very similar layered structure, is uniquely featured by its exotic opto-electrical properties together with mechanical robustness, thermal stability, and chemical inertness. It is thus extensively studied for application in field effect transistors (FETs), tunneling devices, deep UV emitters and detectors, photoelectric devices, and nanofillers. 2D-hBN is considered as one of the most promising materials that can be integrated with other 2D materials, such as graphene and transition metal dichalcogenides (TMDCs), for the next generation microelectronic and other technologies. Although it is by itself an insulator, it can well be tuned by several strategies in terms of properties and functionalities, such as by doping, substitution, functionalization and hybridization, making 2D-hBN a truly versatile type of functional materials for a wide range of applications. In this review, the distinct structural characteristics of 2D-hBN, doping- and defect-induced variations in energy bands and structures, and resultant properties, are presented. There are a wide variety of processing routes that have been developed for 2D-hBN, including also those for doping, substitution, functionalization and combination with other materials to form heterostructures or h-BNC hybrid nanosheets, which are systematically elaborated for novel functions. The comprehensive overview provides the types of the state-of-the-art 2D-hBN made by new synthesis strategies, where the mainstream approaches include exfoliation, chemical vapor deposition, and gas phase epitaxy, together with several other new methods that have been successfully developed in the past few years. On the basis of the extraordinary electrical and functional properties and thermal–mechanical stability, the applications of hBN-based nanosheets as substrates and dielectrics, passivation layers, and nanofillers in nanodevices and nanocomposites are discussed, together with the peculiar optical and wetting characteristics.

From h‐BN to Graphene: Characterizations of Hybrid Carbon‐Doped h‐BN for Applications in Electronic and Optoelectronic Devices

Atomic Layers of Hybridized Boron Nitride and Graphene Domains

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys

From the synthesis of hBN crystals to their use as nanosheets for optoelectronic devices

Hard Three-Dimensional BN Framework with One-Dimensional Metallicity

Large wafer-level two-dimensional h-BN with unintentional carbon doping grown by metalorganic chemical vapor deposition

Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures

Aligned carbon-doping to modulate thermal and electrical conductivity of boron carbon nitride grown from chemical vapor deposition

Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material

Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

Hydrogen‐Doped c‐BN as a Promising Path to High‐Temperature Superconductivity Above 120 K at Ambient Pressure

Carbon-related donor–acceptor pair transition in the infrared in h-BN

Growth and Characterization of Boron Nitride/Diamond Heterostructures

Tuning the Electronic and Optical Properties of Two-Dimensional Hydrogenated C-Bn Nanosheets by Be and C Dopants and Vacancy Defects

Tuning the Electrical Properties of Large Area Graphene Through Boron-Nitrogen Co-Doping

BN-embedded monolayer graphene with tunable electronic and topological properties

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Current Conduction Mechanisms in H-Bn As a Dielectric Material