Abstract:Tandem solar cells are one of the fastest‐growing PV technology, since, it efficiently overcomes the thermalization and non‐absorption losses. However, appropriate absorber materials with suitable bandgaps are required to design an efficient tandem solar cell. In this context, the present research paper brings forth the results of simulation‐based studies carried out on thin‐film/CQD based 2‐T monolithic tandem solar cell that can be processed easily at a reduced cost. The device has been designed using a‐Si: H of wide bandgap (1.7eV) as top cell and PbS CQD of narrow bandgap (1.2eV) as the bottom cell. The feasibility of the proposed design is investigated in two steps. Initially, top and bottom subcell are designed and calibrated to have state of the art conversion efficiency of 6.86% and 9.38%, respectively in accordance with the previous literature. Afterwards, the bottom cell is inverted to get the desired direction of electron flow in accordance with the top cell. The thickness of the inverted bottom cell has been optimized as 200 nm so as to obtain 8.34% efficiency. Standalone condition reflected JSC and VOC of 9.97 mA.cm−2 and 0.91 V in top cell, and 21.28 mA.cm−2 and 0.63 V in the bottom cell. Further, both the top and bottom subcells are evaluated for tandem configuration with the help of ITO based interlayer to provide the current matching conditions. In the proposed tandem design, the thickness of the absorber layers is optimized to achieve the highest JSC, which is indeed limited by the top cell owing to lower JSC value of 10.61 mA.cm−2 in standalone condition. Optimized tandem design with 200 nm/150 nm thick absorber layer based top/bottom subcell resulted in JSC of 10.52 mA.cm−2, VOC of 1.59 V, FF of 71.65% and PCE of 12.02%.This article is protected by copyright. All rights reserved.

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