Abstract:The exceptional resistive switching characteristics of complex oxides make them promising for use in memristors to mimic biological synapses in neuromorphic computing architectures in an energy-efficient manner. Specifically, the electrical conductance of complex oxides can be controllable switched across multiple orders of magnitude by either (a) electroforming a conduction channel (e.g., in tungsten oxide), or (b) inducing Mott-Hubbard transition (e.g., in rare-earth nickelates)– both via controlled migration of defects (such as oxygen vacancies) under applied bias. However, development of accurate neuromorphic computers (i.e., low variability) remains extremely challenging due to a lack of fundamental understanding of the atomic-scale processes that underlie migration and spatiotemporal evolution of oxygen vacancies (and other extended defects) over nano-to-mesoscopic length/timescales under applied electric field. Here, we demonstrate that a synergistic integration of density functional theory (DFT) calculation, ab initio /classical molecular dynamics (AIMD/CMD) simulations, precision synthesis, and multi-modal X-ray imaging experiments provides an effective route to address this knowledge gap. First, we use a combination of multi-modal X-ray imaging (with chemical/structural sensitivity) and CMD simulations to show that the intrinsic randomness of electroforming process in tungsten-oxide memristors can be minimized by careful introduction of sharp protrusions in the electrode gap. We find that sharp protrusions confine the electric field, which yields a reproducible distribution of oxygen vacancies over several switching cycles; and reliably form conduction channel in a specific location in the memristor. Next, we employed a large dataset of data from DFT calculations and short AIMD trajectories to develop deep neural network (DNN) models to accurately capture energetics, atomic forces, atomic charges, and maximally localized Wannier centers in rare-earth nickelates (RNO). CMD simulations based on these newly developed DNNs show that metal-insulator transition (MIT) in RNO occurs via a local structural distortion in the extended nickel structure, which facilitates the electronic instability and causes a sharp concomitant Ni-O bond and Ni-charge disproportion with decreasing temperature; this MIT is also strongly influenced by applied pressure and rare-earth ion. Furthermore, DFT calculations reveal the correlations the oxygen stoichiometry, OV distribution (including different NiO x motifs), OV transport, and electron-lattice coupling in perovskite nickelates. These results will be discussed in the context of controlling defect-induced transitions to design accurate and reliable memristive devices for neuromorphic computing platforms that are vital for artificial intelligence technologies.

The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices (Adv. Electron. Mater. 1/2024)

The Role of Mobile Point Defects in Two-Dimensional Memristive Devices

Nondefective Vacancy Enhanced Resistive Switching Reliability in Emergent van der Waals Metal Phosphorus Trisulfide-Based Memristive In-Memory Computing Hardware

Vacancy-Induced Synaptic Behavior in 2D WS2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing.

Unraveling the Roles of Switching and Relaxation Times in Volatile Electrochemical Memristors to Mimic Neuromorphic Dynamical Features

Memristive Devices and Systems: Modeling, Properties and Applications

Numerical analysis and simulation of lateral memristive devices: Schottky, ohmic, and multi-dimensional electrode models

The role of ion transport phenomena in memristive double barrier devices

Volatile and Nonvolatile Memristive Devices for Neuromorphic Computing

Switching Dynamics and Computing Applications of Memristors: an Overview

Modeling Defect-Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices

Understanding Memristive Behavior: An Atomistic Study of the Influence of Grain Boundaries on Surface and Out-of-Plane Diffusion of Metallic Atoms

Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

Understanding Atomic-Scale Dynamics of Defects in Complex Oxides for Memristive Devices

Memristor Dynamics Enabled Computing

Molecular dynamics simulations of oxide memristors: Crystal field effects

Two-Dimensional Materials Based Memtransistors: Integration Strategies, Switching Mechanisms and Advanced Characterizations

Introduction of Defects in Hexagonal Boron Nitride for Vacancy-Based 2D Memristors.

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

Design of defect-chemical properties and device performance in memristive systems

Impact of S-Vacancies on the Charge Injection Barrier at the Electrical Contact with the MoS2 Monolayer.