Abstract:The filament growth processes, crucial to the performance of nanodevices like resistive switching memories, have been widely investigated to realize the device optimization. With the combination of kinetic Monte Carlo (KMC) simulations and the restrictive percolation model, three different growth modes in electrochemical metallization (ECM) cells were dynamically reproduced, and an important parameter, the relative nucleation distance, was theoretically defined to measure different growth modes quantitatively; hence their transition can be well described. In our KMC simulations, the inhomogeneity of storage medium is realized through introducing evolutionary void versus non-void sites within it to mimic the real nucleation during filament growth. Finally, the renormalization group method was used in the percolation model to analytically illustrate void-concentration-dependent growth mode transition, fitting KMC simulation results quite well. Our study found that the nanostructure of the medium can dominate the filament growth dynamics, as the simulation images as well as the analytical results are consistent with experiments results. Our study spotlights a vital and intrinsic factor, void concentration (relative to defects, grains, or nanopores) of a storage medium, in inducing filament growth mode transition within ECM cells. This theoretically proves a mechanism to tune performance of ECM systems that controlling microstructures of the storage media can dominate the filament growth dynamics, indicating an accessible strategy, nanostructure processing, for device optimization of ECM memristors.

Understanding Memristive Behavior: An Atomistic Study of the Influence of Grain Boundaries on Surface and Out-of-Plane Diffusion of Metallic Atoms

Atomistic description of conductive bridge formation in two-dimensional material based memristor

Non-volatile resistive switching mechanism in single-layer MoS2 memristors: insights from ab initio modelling of Au and MoS2 interfaces

Metal Penetration and Grain Boundary in MoS2 Memristors

Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2

Investigation of resistive switching in Au/MoS2/Au using Reactive Molecular Dynamics and ab-initio quantum transport calculations

Resistive Switching Behaviors Mediated by Grain Boundaries in One Longitudinal Al/MoS2&PVP/ITO Device

Probing Electrochemistry at the Nanoscale: in Situ TEM and STM Characterizations of Conducting Filaments in Memristive Devices

On the switching mechanism and optimisation of ion irradiation enabled 2D $MoS_2$ memristors

Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS 2 Surface

The role of ion transport phenomena in memristive double barrier devices

Gradual conductance modulation by defect reorganization in amorphous oxide memristors

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Emulation of Learning and Memory Behaviors by Memristor Based on Ag Migration on 2D MoS <sub>2</sub> Surface

Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes

Two-dimensional nanovaristors at grain boundaries account for memristive switching in polycrystalline BiFeO3

Electric Field-Dependent Evolution Dynamics of Conductive Filaments in 2D Material-Based Planar Memristors

On the origin of filamentary resistive switching in oxides-based memristive devices

Computational Study on Filament Growth Dynamics in Microstructure-Controlled Storage Media of Resistive Switching Memories.

2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3

The Role of Mobile Point Defects in Two-Dimensional Memristive Devices