Silicate-based Packaging Materials for Heterogeneous Integration of Microsystems
Ryan T. Benz,Devon Beck,Connor Belanger,Al Cabral,Matthew Ricci,Carl V. Thompson,Bradley Duncan
DOI: https://doi.org/10.1109/tcpmt.2024.3371252
2024-01-01
Abstract:Heterogeneous integration represents the cutting edge of microelectronic design and fabrication. However, the limitations of current, organic polymer-based packaging materials prevents the implementation of this assembly technology. Building on previous work, an improved silicate-based packaging material for 3-D heterogeneous integration of microelectronics with a focus on mmWave RF applications was developed. The sodium-free material was shown to be compatible with common microelectronics fabrication processes such as positive and negative photolithographic patterning, wet etching, and most chemical cleans. It was polishable to a surface roughness of 197 ± 29 Å, thermally stable up to 400 °C, compatible with high vacuum exposure down to 1.5 ± 0.4x10-5 torr, and filled gaps with aspect ratios as high as 18.6:1 using certain techniques. The packaging material could be deposited at thicknesses ranging from single-digit microns up to several millimeters and exhibited excellent adhesion to silicon at thicknesses below ~30 μm. The CTE was 2.968 ± 0.054 ppm/°C from 50 - 400 °C. The dielectric constant and loss tangent were ~4 and ~0.0002 at 110 GHz. Fabrication of coplanar waveguides and reconstructed wafer prototypes demonstrated the potential to make RF devices and enable heterogeneous integration.
engineering, manufacturing, electrical & electronic,materials science, multidisciplinary