Recent Advances in Semiconductor Materials and Devices

Xinqiang Wang,Lan Fu,Chennupati Jagadish,Huan Wang

DOI: https://doi.org/10.1002/pssr.202400198

2024-07-20

physica status solidi (RRL) - Rapid Research Letters

Abstract:physica status solidi (RRL) – Rapid Research Letters, Volume 18, Issue 7, July 2024.

physics, condensed matter, applied,materials science, multidisciplinary

What problem does this paper attempt to address?

Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

Xinghuan Chen,Fangzhou Wang,Zirui Wang,Zeheng Wang,Jing-Kai Huang

DOI: https://doi.org/10.3390/mi15121422

IF: 3.4

2024-11-28

Micromachines

Abstract:The field of semiconductor research is experiencing a paradigm shift as the boundaries of Moore's Law are being approached [...]

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

王玉霞,何海平,汤洪高

DOI: https://doi.org/10.3321/j.issn:0454-5648.2002.03.021

2002-01-01

Abstract:Due to its excellent physical and chemical properties, SiC has been regarded as a key material for the third_generation semiconductors with extensive potential applications. In this paper, SiC properties, techniques for SiC bulk and film growth, current status of research on SiC_based device, and applications and prospect of SiC materials are reviewed. The aothors' results of growing single_crystalline 4H-SiC film on Si substrate by pulsed laser deposition are also described.
Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Tahir Hussain,Dana C. Wheeler,Hasan Sharifi,Keisuke Shinohara,Zhiwei Xu,James C. Li,Pamela R. Patterson,Kenneth R. Elliott,Wonill Ha,Yakov Royter,Peter D. Brewer

DOI: https://doi.org/10.1109/sirf.2014.6828535

2014-01-01

Abstract:HRL Laboratories is part of an intense research and development effort to leverage the enormously advanced infrastructure of Si CMOS and the high performance of diverse electronic and photonic devices in an integrated technology. While System in a Package (SiP) and System on a Chip (SoC) approaches involve chips produced in their native foundries and subsequent integration using hybridization or multi-chip modules, HRL has pioneered approaches where partially completed wafers of diverse technologies are integrated using highly intimate placement and heterogeneous interconnects to enable transistor-level integration. Novel ICs have been produced in InP BiCMOS and CMOS memristor-integrated technologies. Unprecedented design flexibility is being enabled with intimate integration of GaN HEMTs together with InP and CMOS.
Semiconductors: Materials, Physics, and Devices

Jiangwei Liu,Hongyang Zhao,Jinlong Liu,Aurélien Maréchal,Wei Wang

DOI: https://doi.org/10.1155/2016/4523960

2016-01-01

Active and Passive Electronic Components

Abstract:1Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan 2Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China 3School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 4School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China
Nano-semiconductor Materials in Photo-electronic Fields

牛俊杰,沙健,马向阳,张辉,杨青,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2002.11.020

2002-01-01

Abstract:Recently,research on nano-semiconductor materials in photo-electronic fields has drawn more and more interest.Nano-semiconductor materials show outstanding properties because of their quantum confinement effects,size effects.They are expected to play a key role in future micro-electronics and nano-electronics.This paper describes the history,current status and limitations of nano-semiconductor materials in photo-electronic fields.
Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices

Shengyao Chen,Shu Wang,Cong Wang,Zhongchang Wang,Qian Liu

DOI: https://doi.org/10.1016/j.nantod.2021.101372

IF: 17.4

2022-02-01

Nano Today

Abstract:2D-material semiconductors with unique photonic and optoelectronic properties process ultralow energy consumption and are naturally compatible to semiconductor fabrication process, which show great potential in many applications such as memristors, optoelectronic probers, energy devices, and catalytic system. Generally, electrode fabrication process inevitably introduces a non-Ohmic contact between the semiconductor and its electrodes due to the Schottky barrier and gap states, thus raising energy consumption and limiting device performance. Recently, seamless-contact technologies have been developed, which can turn the semiconductor-electrode contact to be Ohmic by eliminating gap states and Schottky barrier, thereby having fundamental implications on 2D-material-based devices. This work will review the recent progresses of the seamless contacts from both theory and experiment aspect, summarize the existing difficulties, exploring improvement of metal-semiconductor contact and propose future exploration direction. This review is timely and helpful to improve the performance of 2D-material-based devices by introducing seamless contact and approaching the Ohmic contact.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Advancing in Research of One-dimensional Silicon Nano-materials

卢晓敏,汪雷,杨青,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2004.09.022

2004-01-01

Abstract:As silicon is the most important semiconductor material in micro-electronic field,one-dimensional nano-structures of silicon play an important role in the fields of device assembly,nanometer-size magnetic device,photoelectronics,and have drawn wide interest in the world. Recent progress in the research on silicon nanowires and silicon nanotubes is reviewed,and the research will be done is suggested.
Special Issue: the Silicon Age

Martin Kittler,Deren Yang

DOI: https://doi.org/10.1002/pssa.200690007

2006-01-01

Abstract:AbstractThe present issue of physica status solidi (a) contains a collection of articles about different aspects of current silicon research and applications, ranging from basic investigations of mono‐ and polycrystalline silicon materials and nanostructures to technologies for device fabrication in silicon photovoltaics, micro‐ and optoelectronics. Guest Editors are Martin Kittler and Deren Yang, the organizers of a recent Sino–German symposium held in Cottbus, Germany, 19–24 September 2005.The cover picture shows four examples of “The Silicon Age”: the structure of a thin film solar cell on low‐cost SSP (silicon sheet from powder) substrate (upper left image) [1], a high‐resolution transmission electron microscopy image and diffraction pattern of a single‐crystalline Si nanowire (upper right) [2], a carrier lifetime map from an n‐type multicrystalline silicon wafer after gettering by a grain boundary (lower left) [3], and a scanning acoustic microscopy image of a bonded 150 mm diameter wafer pair (upper right) [4].
New Materials for Post-Si Computing: Ge and GeSn Devices

Gupta Suyog,Gong Xiao,Zhang Rui,Yeo Yee-Chia,Takagi Shinichi,Saraswat Krishna C.

DOI: https://doi.org/10.1557/mrs.2014.163

IF: 5

2014-01-01

MRS Bulletin

Abstract:As Si-transistor technology advances beyond the 10 nm node, the device research community is increasingly looking into the possibility of replacing Si with novel, high mobility materials as the transistor channel. Among several possible candidate materials, germanium and germanium-tin alloys (GeSn) have emerged as strong contenders for the next generation of complementary metal oxide semiconductor (CMOS) transistors. This article presents a comprehensive overview of the state of the art in Ge and GeSn transistor research. We address several key material challenges involved in fabricating high-performance Ge/GeSn-based CMOS transistors, such as gate stack formation and achieving low-resistance contacts to transistor source/drain regions. Using Ge/GeSn as channel materials, we present a FinFET-based, Si-compatible CMOS solution for device dimensions expected in the 7 nm technology node, discuss the practical challenges involved in realizing this design, and highlight directions for future research.
Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Peng Wei,Haolin Wang,Hui Lü,Lei Yin,Yue Wang,B. Grandidier,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1002/smll.202100655

IF: 13.3

2021-01-01

Small

Abstract:The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.
Advances, optical and electronic applications of functional materials based on rare earth sulfide semiconductors

Wenhao Xu,Gongxun Bai,Er Pan,Denghao Li,Junjie Zhang,Shiqing Xu

DOI: https://doi.org/10.1016/j.matdes.2024.112698

IF: 9.417

2024-01-26

Materials & Design

Abstract:Rare earth sulfides are a promising group of semiconductor materials with intricate crystal structures and unique electronic configurations, which can be applied in the fields of energy storage, environmental protection and inorganic pigments. In recent years, with the development of modulation tools, rare earth sulfides have gained attention in more fields, such as thermoelectric materials, magnetic materials and electrochemical detection. We need to better understand rare earth sulfides before we can develop practical functional materials. In this article, we present the basic crystal structures of rare earth sulfides with recent research progress in preparation methods and microstructure modulation. Combined with the work of our group, this article focuses on the breakthroughs of rare earth sulfides in applications such as inorganic pigments, energy materials and photocatalysis. Even more, we discuss the intrinsic link between structures and properties and the design strategies to enhance the optical, electronic and catalytic properties of rare earth sulfides. Finally, we summarize the challenges and future directions in the research of rare earth sulfides.

materials science, multidisciplinary
Recent Advances in Semiconducting Monoelemental Selenium Nanostructures for Device Applications

Weichun Huang,Minmin Wang,Lanping Hu,Cong Wang,Zhongjian Xie,Han Zhang

DOI: https://doi.org/10.1002/adfm.202003301

IF: 19

2020-08-18

Advanced Functional Materials

Abstract:<p>Investigations into semiconductor nanomaterials from both an academic and industrial point of view are of great significance. Selenium (Se) nanostructures, as narrow bandgap semiconductors, have a variety of potential applications in the fabrication of many high‐performance devices. The past decades have witnessed rapid development in new strategies for synthesizing Se nanostructures with controlled sizes, shapes, and structures, whose diverse structure‐dependent nature enables functional Se nanomaterials to have great potentials for modern applications. This review focuses on the synthesis and morphology control of intriguing Se nanostructures, the latest progress in understanding the fundamental properties of Se nanostructures, and the recent advances in high‐performance Se nanomaterial‐based devices for diverse applications. Finally, the challenges and future opportunities for Se nanostructures and Se‐related devices are also discussed.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Research progress of electronic properties of self-assembled semiconductor quantum dots

Jie Sun,Peng Jin,Zhanguo Wang

DOI: https://doi.org/10.48550/arXiv.0712.1000

2007-12-07

Abstract:Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral transport and charge storage, this paper gives a brief introduction of recent advances in the electronic properties of that material and an analysis of problems and perspectives.

Mesoscale and Nanoscale Physics
State of the Art and Future Perspectives in Advanced CMOS Technology

Henry H. Radamson,Huilong Zhu,Zhenhua Wu,Xiaobin He,Hongxiao Lin,Jinbiao Liu,Jinjuan Xiang,Zhenzhen Kong,Wenjuan Xiong,Junjie Li,Hushan Cui,Jianfeng Gao,Hong Yang,Yong Du,Buqing Xu,Ben Li,Xuewei Zhao,Jiahan Yu,Yan Dong,Guilei Wang

DOI: https://doi.org/10.3390/nano10081555

IF: 5.3

2020-08-07

Nanomaterials

Abstract:The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
ADVANCES IN THE STUDY OF PROPERTIES AND MECHANICS OF SEMICONDUCTOR QUANTUM DOT STRUCTURES

Chu Haijian,Jiankang Chen

2007-01-01

Abstract:Considerable experimental and theoretical studies have been carried out in semiconductor quantum dots(QDs)in recent years,since quantum-dot devices offer a bright prospect of improved electronic and optical properties due to the zero-dimensional quantum confinement of carriers.The elastic field is essential for the analyses of the physical and mechanical properties of QDs.In this article,the elements of the low-dimensional quantum confined systems,the physical properties and the fabrication techniques of the QDs are reviewed systematically.In particular,the researches on mechanics of the semiconductor QD structures,and the coupling between the elastic field and the physical properties are discussed.
Ferroelectric Srbi2ta2o9-Sio2 Glass-Ceramic Thin Films in Metal/Ferroelectric/Insulator/Semiconductor Structures

D Wu,S Huang,QY Shao,AD Li,NB Ming

DOI: https://doi.org/10.1002/1521-396x(200209)193:1<r4::aid-pssa99994>3.0.co;2-e

2002-01-01

Abstract:physica status solidi (a)Volume 193, Issue 1 p. R4-R6 Rapid Research Note Ferroelectric SrBi2Ta2O9–SiO2 Glass-Ceramic Thin Films in Metal/Ferroelectric/Insulator/Semiconductor Structures Di Wu, Di Wu [email protected] National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorSu Huang, Su Huang National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorQiyue Shao, Qiyue Shao National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorAidong Li, Aidong Li National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorNaiben Ming, Naiben Ming National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this author Di Wu, Di Wu [email protected] National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorSu Huang, Su Huang National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorQiyue Shao, Qiyue Shao National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorAidong Li, Aidong Li National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this authorNaiben Ming, Naiben Ming National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P.R. ChinaSearch for more papers by this author First published: 01 October 2002 https://doi.org/10.1002/1521-396X(200209)193:13.0.CO;2-ECitations: 2AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat No abstract is available for this article. References [1] R. Ramesh, A. Inam, W.K. Chan, B. Wilkens, K. Myers, K. Remschnig, D.L. Hart, and J.M. Tarascon, Science 252, 944 (1991). [2] L.A. Bursill, I.M. Reaney, D.P. Vijay, and S.B. Desu, J. Appl. Phys. 75, 1521 (1994). [3] J.-P. Han and T.P. Ma, Appl. Phys. Lett. 72, 1185 (1998). [4] X. Wang and H. Ishiwara, Jpn. J. Appl. Phys. 40, 1401 (2001). [5] Q.Y. Shao, A.D. Li, H.Q. Ling, D. Wu, Y. Wang, Y. Feng, S.Z. Yang, Z.G. Liu, M. Wang, and N.B. Ming, in: Proc. 8th Internat. Conf. on Electronic Materials, Xi'an (China) 2002, to be published in Microelectron. Eng. [6] D.J. Taylor, R.E. Jones, P. Zurcher, P. Chu, Y.T. Lii, B. Jiang, and S.J. Gillespie, Appl. Phys. Lett. 68, 2300 (1996). [7] S.L. Miller and P.J. McWhorter, J. Appl. Phys. 72, 5999 (1992). [8] B.-E. Park and H. Ishiwara, Appl. Phys. Lett. 79, 806 (2001). [9] E.H. Nicollian and J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, New York 1982. [10] D.S. Shin, H.N. Lee, Y.T. Kim, I.H. Choi, and B.H. Kim, Jpn. J. Appl. Phys. 37, 4373 (1998). [11] K. Saegusa, J. Am. Ceram. Soc. 79, 3282 (1996). Citing Literature Volume193, Issue1September 2002Pages R4-R6 ReferencesRelatedInformation
Recent Advances in Ultrathin Two-Dimensional Nanomaterials.

Chaoliang Tan,Xiehong Cao,Xue-Jun Wu,Qiyuan He,Jian Yang,Xiao Zhang,Junze Chen,Wei Zhao,Shikui Han,Gwang-Hyeon Nam,Melinda Sindoro,Hua Zhang

DOI: https://doi.org/10.1021/acs.chemrev.6b00558

IF: 62.1

2017-01-01

Chemical Reviews

Abstract:Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocatalysis, batteries, supercapacitors, solar cells, photo catalysis, and sensing platforms. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.
Recent Progress in Solid‐State Dye‐Sensitized Solar Cells

Bin Li,Liduo Wang,Bonan Kang,Peng Wang,Yong Qiu

DOI: https://doi.org/10.1002/chin.200635288

2006-01-01

ChemInform

Abstract:AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.
Recent Trends in Novel Semiconductor Devices

Archana Pandey

DOI: https://doi.org/10.1007/s12633-022-01694-8

IF: 3.4

2022-01-28

Silicon

Abstract:The VLSI industry has grown a lot for several decades. The Packing density of integrated circuits has been increased without compromising the functionality. Scaling of semiconductor devices, improvements in process technology and the development of new device designs are the key to this. Starting from the planar MOSFETs to novel multigate transistors, semiconductor devices have a history of many decades. There is a need for extensive exploration in order to determine the best suited semiconductor device for a given technology node. A brief overview of the transition from the planar MOSFET to the novel semiconductor devices and a comparative study of various novel semiconductor devices viz. FinFET, Gate all around FET, Vertical Nanowire and Nanosheet FET are presented in this paper. Optimization of the device configuration and improvements in device design/technology are also reviewed. A review of the device comparison on the basis of various device performance parameters such as subthreshold slope, On-Off current ratio, ease of fabrication, process variations and impact of scaling on figure of merits is presented in this paper.

materials science, multidisciplinary,chemistry, physical
Recent Structural Engineering of Polymer Semiconductors Incorporating Hydrogen Bonds

Qi Zhang,Jianyao Huang,Kai Wang,Wei Huang

DOI: https://doi.org/10.1002/adma.202110639

IF: 29.4

2022-04-24

Advanced Materials

Abstract:Advanced Materials, Accepted Article.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Recent Advances in Semiconductor Materials and Devices

Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

Progress in Research on Wide Band-Gap Semiconductor SiC and Its Application

Recent Advances in Monolithic Integration of Diverse Technologies with Si CMOS

Semiconductors: Materials, Physics, and Devices

Nano-semiconductor Materials in Photo-electronic Fields

Latest advance on seamless metal-semiconductor contact with ultralow Schottky barrier in 2D-material-based devices

Advancing in Research of One-dimensional Silicon Nano-materials

Special Issue: the Silicon Age

New Materials for Post-Si Computing: Ge and GeSn Devices

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

Advances, optical and electronic applications of functional materials based on rare earth sulfide semiconductors

Recent Advances in Semiconducting Monoelemental Selenium Nanostructures for Device Applications

Research progress of electronic properties of self-assembled semiconductor quantum dots

State of the Art and Future Perspectives in Advanced CMOS Technology

ADVANCES IN THE STUDY OF PROPERTIES AND MECHANICS OF SEMICONDUCTOR QUANTUM DOT STRUCTURES

Ferroelectric Srbi2ta2o9-Sio2 Glass-Ceramic Thin Films in Metal/Ferroelectric/Insulator/Semiconductor Structures

Recent Advances in Ultrathin Two-Dimensional Nanomaterials.

Recent Progress in Solid‐State Dye‐Sensitized Solar Cells

Recent Trends in Novel Semiconductor Devices

Recent Structural Engineering of Polymer Semiconductors Incorporating Hydrogen Bonds