A Novel SGT MOSFET Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects
Weiye Mo,Jun Ye,Haonan Liu,Xuan Xiao,Wenqi Fan,Yang Song,Wei Huang,Tao Wang,Qingdong Zhang,Debin Zhang,D. W. Zhang
DOI: https://doi.org/10.1109/led.2024.3394470
IF: 4.8157
2024-01-01
IEEE Electron Device Letters
Abstract:this letter, a novel radiation-hardened SGT(N-SGT), with a specialized hardening process, is firstly developed and the radiation degradation model is proposed. N-SGT has more stable V-th and BV after Co-60 irradiation, with only 0.16 V of |Delta V-th| and 32.5 V of BV at a dose of 100 krad (Si), while it is 1.3 V of |Delta V-th| and 22.5 V of BV for the Conventional-SGT (C-SGT). For N-SGT, lower Q(GOX) reduces the effect of channel depletion, which makes the Vth change less. The lower Q(IPOX) , Q(TROX) and Q(IPOX) : Q(TRO)X (1:3) effectively weaken the charge imbalance and slow down the BV degradation. Additionally, this letter firstly reveals the TID effects on capacitance characteristics, especially the increase of C-gd in C-SGT, indicating that Q(IPOX) and Q(GOX) caused the enhanced DIBL effect and channel depletion. Fortunately, N-SGT solves these problems well and achieved a good trade-off between BV degradation and channel depletion during TID radiation.