Abstract:Plasma-enhanced atomic layer deposition (PE-ALD) is widely employed in microelectronics, energy, and sensing applications. Typically, PE-ALD processes for metal oxides utilize remote inductively coupled plasmas operated at powers of >200 W, ensuring a sufficient flux of oxygen radicals to the growth surface. However, this approach often leads to significant oxidation of chemically sensitive substrates, including most technological semiconductors. Here, we demonstrate that plasma powers as low as 5 W can effectively suppress substrate oxidation while maintaining the structural, optical, and electronic quality of the films. Specifically, we investigate the growth of titanium oxide (TiOx) using two commonly used metalorganic precursors, titanium isopropoxide and tetrakis(dimethylamino)titanium. Films deposited with 5 and 300 W oxygen plasma power are nearly indiscernible from one another, exhibiting significantly lower defect concentrations than those obtained from thermal ALD with H2O. The low plasma power process preserves desired physical characteristics of PE-ALD films, including large optical constants (n > 2.45 at 589 nm), negligible defect-induced sub-bandgap optical absorption (α < 102 cm−1), and high electrical resistivity (>105 Ω cm). Similar behavior, including suppressed interface oxidation and low defect content, is observed on both Si and InP substrates. As an example application of this approach, the assessment of InP/TiOx photocathodes and Si/TiOx photoanodes reveals a significant improvement in the photocurrent onset potential in both cases, enabled by suppressed substrate oxidation during low power PE-ALD. Overall, low power PE-ALD represents a generally applicable strategy for producing high quality metal oxide thin films while minimizing detrimental substrate reactions.

Thermal laser evaporation of elemental metal sources in oxygen

Some Oxide-Films Deposited By Reactive Low-Voltage Plasma-Assisted Evaporation

Thermal laser evaporation of elements from across the periodic table

High temperature diffusion enabled epitaxy of the Ti-O system

Adsorption-controlled epitaxy of perovskites

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum

Applicability of post-ionization theory to laser-assisted field evaporation of magnetite

Saturation pressure of nonequilibrium titanium evaporation during additive manufacturing by electron powder bed fusion

MgO nanostructures synthesized by thermal evaporation

State of the art, trends, and opportunities for oxide epitaxy

Characteristics of a Source for Oxide Coating Deposition by the Electron-Beam Evaporation of Dielectric Materials

Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface

Comprehensive Study of the Film Surface Temperature and Plasma Thermokinetics During La1.85Sr0.15CuO4 Deposition by Laser Ablation

Oxygen in Complex Oxide Thin Films Grown by Pulsed Laser Deposition: a Perspective

Element Vaporization of Ti-6Al-4V Alloy during Selective Laser Melting

Experimental Study on the Temporal Evolution Parameters of Laser–Produced Tin Plasma under Different Laser Pulse Energies for LPP–EUV Source

Epitaxial growth characteristics of oxide thin films prepared by pulsed laser deposition

Solid Source Metal-Organic Molecular Beam Epitaxy of Epitaxial RuO2

An Optical Emission Spectroscopic Study on Visible Laser Ablation of Ta2O5 in Ambient O2

Suppressing substrate oxidation during plasma-enhanced atomic layer deposition on semiconductor surfaces