Quantification of Crystalline Phases in Hf 0.5 Zr 0.5 O 2 Thin Films through Complementary Infrared Spectroscopy and Ab Initio Supercell Simulations
Rebecca Cervasio,Emilie Amzallag,Marine Verseils,Pierre Hemme,Jean-Blaise Brubach,Ingrid Cañero Infante,Greta Segantini,Pedro Rojo Romeo,Alessandro Coati,Alina Vlad,Yves Garreau,Andrea Resta,Bertrand Vilquin,Jérôme Creuze,Pascale Roy
DOI: https://doi.org/10.1021/acsami.3c13848
IF: 9.5
2024-01-13
ACS Applied Materials & Interfaces
Abstract:In the quest for thinner and more efficient ferroelectric devices, Hf(0.5)Zr(0.5)O(2) (HZO) has emerged as a potential ultrathin and lead-free ferroelectric material. Indeed, when deposited on a TiN electrode, 1-25 nm thick HZO exhibits excellent ferroelectricity capability, allowing the prospective miniaturization of capacitors and transistor devices. To investigate the origin of ferroelectricity in HZO thin films, we conducted a far-infrared (FIR) spectroscopic study on 5 HZO films with...
materials science, multidisciplinary,nanoscience & nanotechnology