Synthesis, Crystal Structures, and Nonlinear Optical Properties of Chalcone Doped by Titanium Dioxide Nanoparticles for Solar Cell Application

M. K. M. Ali,A. O. Elzupir,A. I. Aljameel,K. H. Ibnaouf

DOI: https://doi.org/10.1166/jno.2022.3310

2022-09-01

Journal of Nanoelectronics and Optoelectronics

Abstract:In this work, we investigate the effects of titanium dioxide (TiO 2 ) nanoparticle percentages on the optical and electrical properties of 3-(4-(dimethyl-amino)phenyl)-1-phenyl-(2E)-propen-1-one (DAAP). In order to achieve thin films, DAAP was dissolved in acetone and doped with different ratios of TiO 2 . The pure and composite mixtures were spin-coated onto a glass substrate. We investigated the influence of TiO 2 on XRD patterns, absorption, energy band gaps, refractive indices, sheet resistance, resistivity, and Hall coefficients. We used the XRD technique to study the structure of DAAP pre- and post-doping with TiO 2 nanoparticles. It was evident from the XRD patterns that the composite transformed from an amorphous to a polycrystalline nature and behaved similarly to titanium oxide crystals. The pure sample exhibited an absorption band of 409 nm. With the addition of TiO 2 , the whole absorption spectrum shifted to the blue region. For example, with a dopant percentage of 15%, the spectrum shifted to a wavelength of 368 nm. The energy band gap values increased with a dopant concentration from 2.65 eV of pure DAAP to 2.91 eV of maximum dopant percentage (15%). The refractive index decreased to its lowest value of 2.47 with the increase in TiO 2 concentration. The impact of increasing TiO 2 percentage highly improved electrical characteristics by reducing the sheet resistance and resistivity to 905 k(Ω/sq) and 230 k on the (Ω · cm), respectively. An optimized DAAP doped with 15% TiO 2 has been used as an n -type layer on a p -type monocrystalline silicon wafer (Si (111)) to fabricate η = 0.23% efficient solar cells. On the other hand, the amplified spontaneous emission (ASE) of the DAAP and dopant mixture was excited by the third harmonic generation ( λ ex = 355 nm). The pure DAAP exhibits an ASE peak at 535 nm. The intensity decreased rapidly with increased dopant concentration, whereas the full width at half-maximum (FWHM) increased slightly.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied