Abstract:This study leverages the synergy of modulating conductive filament to render a significant breakthrough in memory window, extending up to 1 million, and retention for up to 10 years, fostering advanced paradigms in bionics. These results underscore the judicious regulation of ion migration as a viable route to high‐performance memristors for neuromorphic computing applications. Memristors offer a promising solution to address the performance and energy challenges faced by conventional von Neumann computer systems. Yet, stochastic ion migration in conductive filament often leads to an undesired performance tradeoff between memory window, retention, and endurance. Herein, a robust memristor based on oxygen‐rich SnO2 nanoflowers switching medium, enabled by seed‐mediated wet chemistry, to overcome the ion migration issue for enhanced analog in‐memory computing is reported. Notably, the interplay between the oxygen vacancy (Vo) and Ag ions (Ag+) in the Ag/SnO2/p++‐Si memristor can efficiently modulate the formation and abruption of conductive filaments, thereby resulting in a high on/off ratio (>106), long memory retention (10‐year extrapolation), and low switching variability (SV = 6.85%). Multiple synaptic functions, such as paired‐pulse facilitation, long‐term potentiation/depression, and spike‐time dependent plasticity, are demonstrated. Finally, facilitated by the symmetric analog weight updating and multiple conductance states, a high image recognition accuracy of ≥ 91.39% is achieved, substantiating its feasibility for analog in‐memory computing. This study highlights the significance of synergistically modulating conductive filaments in optimizing performance trade‐offs, balancing memory window, retention, and endurance, which demonstrates techniques for regulating ion migration, rendering them a promising approach for enabling cutting‐edge neuromorphic applications.

Multiphase Polarization in Ion‐Intercalation Nanofilms: General Theory Including Various Surface Effects and Memory Applications

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Modulation of ionic conduction using polarizable surfaces

Phase-Separated 2D PbBiI5 Halide Memristor for Neuromorphic Computing

Phase Separation Dynamics in Isotropic Ion-Intercalation Particles

The role of ion transport phenomena in memristive double barrier devices

Synergistically Modulating Conductive Filaments in Ion‐Based Memristors for Enhanced Analog In‐Memory Computing

Building a depletion-region width modulation model and realizing memory characteristics in PN heterostructure devices

Implementing a Type of Synaptic Coupling Between Excitatory and Inhibitory Cells by Using Pt/Poly(3,4-ethylenedioxythiophene):Polystyrenesulfonate/HfOx/Pt Memristive Structure

Bipolar to Unipolar Mode Transition and Imitation of Metaplasticity in Oxide Based Memristors with Enhanced Ionic Conductivity

Observation of Electric Hysteresis, Polarization Oscillation, and Pyroelectricity in Nonferroelectric Heterojunctions

Understanding the Reversible Transition of Unipolar and Bipolar Resistive Switching Characteristics in Solution-Derived Nanocrystalline Au-Co3O4 Thin-Film Memristors

Ultrathin Anion Conductors Based Memristor

Bioactive Ion‐Confined Ultracapacitive Memristors with Neuromorphic Functions

Nanochannel‐Based Interfacial Memristor: Electrokinetic Analysis of the Frequency Characteristics

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics

Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces

A Reversible Structural Phase Transition by Electrochemically-Driven Ion Injection into a Conjugated Polymer.

Ion Concentration Polarization by Bifurcated Current Path

Dynamic surface phases controlling asymmetry of high-rate lithiation and delithiation in phase-separating electrodes

High synaptic plasticity enabled by controlled ion migration in organic heterojunction memristors