Phase-Separated 2D PbBiI5 Halide Memristor for Neuromorphic Computing

Hee Joon Jung
DOI: https://doi.org/10.1007/s13391-024-00528-6
IF: 3.151
2024-11-10
Electronic Materials Letters
Abstract:Here, we report on the two-dimensional (2D) (PbI 2 ) 0.5 (BiI 3 ) 0.5 mixed halide memristor, which exhibits nonlinear conductance that surpasses the properties of the simple combination of PbI 2 and BiI 3 binaries. This 2D system is phase-separated into Bi-rich and Bi-poor nanoscale domains rather than forming a single homogeneous phase. Phase boundaries, predominantly featuring iodine vacancies or stacking faults, induce a novel memristive behavior along the c-axis, driven by ion transport perpendicular to the layered structure, making it promising for resistive switching memory (RRAM) applications. In-situ biasing transmission electron microscopy (TEM) reveals the formation of iodine filaments under sweep bias, with ion migration occurring mainly through phase boundaries in the out-of-plane direction. Direct observation of reversible filament formation in this phase-separated iodide system provides new insights into defect-mediated ion migration, resulting in nonlinear resistive switching, with potential applications in neuromorphic computing. The ability to track heavy anions like iodine in the halide memristor provides valuable insights into the similar correlation mechanisms between ion migration and defects in oxide or sulfide-based memristors. This capability could shed light on how defects influence ion transport in a broader range of materials, enhancing the development of resistive switching devices. Graphical
materials science, multidisciplinary
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